Effect of H Doping on The Structural and Magnetic Properties in ZnCoO Diluted Magnetic Semiconductor Thin Films

YE Zhan-tong; ZHU De-liang; MA Xiao-cui; LV You-ming; LIU Wen-jun; CAO Pei-jiang; JIA Fang

doi:10.3788/fgxb20123304.0417

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Effect of H Doping on The Structural and Magnetic Properties in ZnCoO Diluted Magnetic Semiconductor Thin Films

paper | 更新时间：2020-08-12

- Effect of H Doping on The Structural and Magnetic Properties in ZnCoO Diluted Magnetic Semiconductor Thin Films
- Chinese Journal of Luminescence Vol. 33, Issue 4, Pages: 417-421(2012)
- 作者机构：
  
  深圳大学材料学院深圳市特种功能材料重点实验室,广东深圳,518060
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123304.0417
  CLC： O484.4
- Received：17 January 2012，
  
  Revised：21 February 2012，
  
  Published Online：10 April 2012，
  
  Published：10 April 2012
- 稿件说明：
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叶展通, 朱德亮, 马晓翠, 吕有明, 柳文军, 曹培江, 贾芳. H掺杂对ZnCoO稀磁半导体薄膜结构及磁性能的影响[J]. 发光学报, 2012,33(4): 417-421

YE Zhan-tong, ZHU De-liang, MA Xiao-cui, LV You-ming, LIU Wen-jun, CAO Pei-jiang, JIA Fang. Effect of H Doping on The Structural and Magnetic Properties in ZnCoO Diluted Magnetic Semiconductor Thin Films[J]. Chinese Journal of Luminescence, 2012,33(4): 417-421
叶展通, 朱德亮, 马晓翠, 吕有明, 柳文军, 曹培江, 贾芳. H掺杂对ZnCoO稀磁半导体薄膜结构及磁性能的影响[J]. 发光学报, 2012,33(4): 417-421 DOI： 10.3788/fgxb20123304.0417.

YE Zhan-tong, ZHU De-liang, MA Xiao-cui, LV You-ming, LIU Wen-jun, CAO Pei-jiang, JIA Fang. Effect of H Doping on The Structural and Magnetic Properties in ZnCoO Diluted Magnetic Semiconductor Thin Films[J]. Chinese Journal of Luminescence, 2012,33(4): 417-421 DOI： 10.3788/fgxb20123304.0417.

摘要

利用磁控溅射法

采用亚分子分层掺杂技术交替溅射Co靶和ZnO靶

在Si衬底上制备了不同氢氩流量比的H:ZCO薄膜样品

研究了氢氩流量比对薄膜结构特性和磁学性能的影响。所制备的薄膜样品具有

轴择优取向。由于H对表面和界面处悬挂键的钝化作用

随H

流量比的增加

薄膜的择优取向变差。磁性测量结果显示

薄膜样品的铁磁性随着氢氩流量比的增大而增强。XPS结果表明

随着H含量的增大

金属态Co团簇的相对含量逐渐增加

而氧化态Co离子的相对含量逐渐减小。H:ZCO样品中的铁磁性可能来源于Co金属团簇

H的掺入促使ZnO中的Co离子还原成Co金属团簇

从而增强了薄膜样品的室温铁磁性。

Abstract

H:ZCO thin films were prepared with different

(Ar+H

) by using submolecule doping technique

where the magnetic sputtering of Co and ZnO were alternatively performed onto silicon substrates. The effect of

(Ar+H

) on the structural and magnetic properties in films was investigated. All the prepared thin films have a

-axis preferential orientation

and the intensity of (002) diffraction peak decreases with the increase of

(Ar+H

) in films because the doping hydrogen can passivate the dangling bonds at the surfaces and grain boundaries. Magnetic measurement shows that the ferromagnetism is enhanced with the

(Ar+H

) increasing. XPS results exhibit that the relative content of Co metal clusters gradually increases

and the relative content of oxidized Co ions gradually decreases with the increase of H

ratio. According to the above results

it is suggested that the ferromagnetism in H:ZCO thin film originates from Co metal clusters

and more oxidized Co ions is reduced to Co metal clusters with H

doping

therefore the ferromagnetism is enhanced.

关键词

Keywords

references

Dietl T, Ohno H, Matsukura F, et al. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J]. Science, 2000, 287(5455):1019-1022.[2] Kaminski A, Sarma S D. Polaron percolation in diluted magnetic semiconductors [J]. Phys. Rev. Lett., 2002, 88(24):247202-1-4.[3] Zhuo Shiyi, Liu Xuechao, Xiong Ze, et al. Defect study at the surface of (Cu,Al)-doped ZnO thin film by Raman spectra [J]. Chin. J. Lumin.(发光学报), 2012, 33(1):109-113 (in Chinese) .[4] Pan F, Song C, Liu X J, et al. Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films [J]. Mater. Sci. Eng., 2008, 62(1):1-35.[5] Hsu H S, Huang J C, Chen S F, et al. Role of grain boundary and grain defects on ferromagnetism in Co:ZnO films [J]. Appl. Phys. Lett., 2007, 90(10):102506-1-3.[6] Deka S, Joy P A. Ferromagnetism induced by hydrogen in polycrystalline nonmagnetic Zn0.95Co0.05O [J]. Appl. Phys. Lett., 2006, 89(3):032508-1-3.[7] Roberts B K, Pakhomov A B, Krishnan K M. Effect of hydrogen codoping on magnetic ordering and conductivity in Cr:ZnO thin films [J]. J. Appl. Phys., 2008, 103(7):07D133-1-3.[8] Park C H, Chadi D J. Hydrogen-mediated spin-spin interaction in ZnCoO [J]. Phys. Rev. Lett., 2005, 94(12):127204-1-4.[9] Lee H J, Park C H, Jeong S Y, et al. Hydrogen-induced ferromagnetism in ZnCoO [J]. Appl. Phys. Lett., 2006, 88(6):062504-1-3.[10] Huang B, Zhu D L, Ma X C. Great influence of the oxygen vacancies on the ferromagnetism in the co-doped ZnO films [J]. Appl. Surf. Sci., 2007, 253(16):6892-6895.[11] Cai P F, You J B, Zhang X W, et al. Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment [J]. J. Appl. Phys., 2009, 105(8):083713-1-6.[12] Moulder J F, Stickle W F, Sobol P E, et al. Handbook of X-Ray Photoelectron Spectroscopy [M]. Eden Prairie: Perkin-Elmer, 1992:82-84.[13] Yang Ming, Gong Jian, Li Henian, et al. Spin-polarized tunnel in Ⅱ-Ⅵ group diluted magnetic semiconductors with a multilayer structures [J]. Chin. J. Lumin.(发光学报), 2010, 31(4):515-520 (in Chinese).

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