Contact Properties of ZnO/Cu Films with MSM Structure

DONG Yan-feng; LI Qing-shan; ZHANG Li-chun; SONG Lian-ke

doi:10.3788/fgxb20123304.0412

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Contact Properties of ZnO/Cu Films with MSM Structure

paper | 更新时间：2020-08-12

- Contact Properties of ZnO/Cu Films with MSM Structure
- Chinese Journal of Luminescence Vol. 33, Issue 4, Pages: 412-416(2012)
- 作者机构：
  
  1. 曲阜师范大学物理工程学院, 山东曲阜,273165
  2. 曲阜师范大学激光研究所, 山东曲阜,273165
  3. 鲁东大学物理学院,山东烟台,264025
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123304.0412
  CLC： O472.4;O484.1
- Received：22 November 2011，
  
  Revised：14 February 2012，
  
  Published Online：10 April 2012，
  
  Published：10 April 2012
- 稿件说明：
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董艳锋, 李清山, 张立春, 宋连科. MSM结构ZnO/Cu薄膜的接触特性[J]. 发光学报, 2012,33(4): 412-416

DONG Yan-feng, LI Qing-shan, ZHANG Li-chun, SONG Lian-ke. Contact Properties of ZnO/Cu Films with MSM Structure[J]. Chinese Journal of Luminescence, 2012,33(4): 412-416
董艳锋, 李清山, 张立春, 宋连科. MSM结构ZnO/Cu薄膜的接触特性[J]. 发光学报, 2012,33(4): 412-416 DOI： 10.3788/fgxb20123304.0412.

DONG Yan-feng, LI Qing-shan, ZHANG Li-chun, SONG Lian-ke. Contact Properties of ZnO/Cu Films with MSM Structure[J]. Chinese Journal of Luminescence, 2012,33(4): 412-416 DOI： 10.3788/fgxb20123304.0412.

摘要

利用脉冲激光沉积(PLD)法在Si(111)衬底上分别生长了ZnO薄膜和Cu薄膜

用Cu薄膜作电极

研究了ZnO薄膜与Cu薄膜的接触特性。分别用X射线衍射仪、扫描电子显微镜和

I-V

测试的方法对样品的晶体质量、结构和电学性质进行了测试。结果表明:样品中ZnO薄膜和Cu薄膜均具有高度的择优取向;当Cu和 ZnO直接接触时

样品的

I-V

特性是非线性的;当Cu和 ZnO之间通过ZnO:Cu层间接接触时形成良好的欧姆接触

而且退火后欧姆接触性能明显提高

电阻率降低约2/3。本研究为价格低廉的Cu电极成为ZnO基器件的欧姆电极提供了一定的依据。

Abstract

Considering the good conductivity and anti-electromigration and low price

Cu films were prepared as electrodes of ZnO-based devices via pulsed laser deposition method on Si(111) substrates. The XRD and SEM images of ZnO/Cu films were examined and the current-voltage characteristics were measured. The results exhibit that ZnO films are highly

-axis oriented

and Cu films are highly (111) oriented. Ohmic contact can be obtained when the ZnO:Cu layer was involved between the ZnO film and the Cu film

and the Ohmic contact properties can be improved after annealing. Study on how to improve the properties of Ohmic contact of the ZnO/Cu films is still continued. The results indicate that Cu may be used as Ohmic contact electrodes for ZnO-based devices.

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Keywords

references

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