Effect of N2O Plasma Treatment on The SiNx-based InGaZnO Thin Film Transistors

LI Jun; ZHOU Fan; LIN Hua-ping; ZHANG Hao; ZHANG Jian-hua; JIANG Xue-yin; ZHANG Zhi-lin

doi:10.3788/fgxb20123304.0400

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Effect of N₂O Plasma Treatment on The SiN_x-based InGaZnO Thin Film Transistors

paper | 更新时间：2020-08-12

- Effect of N₂O Plasma Treatment on The SiN_x-based InGaZnO Thin Film Transistors
- Chinese Journal of Luminescence Vol. 33, Issue 4, Pages: 400-403(2012)
- 作者机构：
  
  1. 上海大学材料科学与工程学院上海,200444
  2. 上海大学新型显示技术与应用集成教育部重点实验室上海,200072
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123304.0400
  CLC： TN321+.5
- Received：19 December 2011，
  
  Revised：16 February 2012，
  
  Published Online：10 April 2012，
  
  Published：10 April 2012
- 稿件说明：
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李俊, 周帆, 林华平, 张浩, 张建华, 蒋雪茵, 张志林. N2O Plasma表面处理对SiNx基IGZO-TFT性能的影响[J]. 发光学报, 2012,33(4): 400-403

LI Jun, ZHOU Fan, LIN Hua-ping, ZHANG Hao, ZHANG Jian-hua, JIANG Xue-yin, ZHANG Zhi-lin. Effect of N2O Plasma Treatment on The SiNx-based InGaZnO Thin Film Transistors[J]. Chinese Journal of Luminescence, 2012,33(4): 400-403
李俊, 周帆, 林华平, 张浩, 张建华, 蒋雪茵, 张志林. N2O Plasma表面处理对SiNx基IGZO-TFT性能的影响[J]. 发光学报, 2012,33(4): 400-403 DOI： 10.3788/fgxb20123304.0400.

LI Jun, ZHOU Fan, LIN Hua-ping, ZHANG Hao, ZHANG Jian-hua, JIANG Xue-yin, ZHANG Zhi-lin. Effect of N2O Plasma Treatment on The SiNx-based InGaZnO Thin Film Transistors[J]. Chinese Journal of Luminescence, 2012,33(4): 400-403 DOI： 10.3788/fgxb20123304.0400.

摘要

采用N

O plasma处理SiN

薄膜作为绝缘层

以室温下沉积的铟镓锌氧化物(IGZO)作为有源层制备了 IGZO薄膜晶体管。与常规的IGZO-TFT相比

O plasma处理过的IGZO-TFT的迁移率由原来的4.5 cm

-1

增加至8.1 cm

-1

阈值电压由原来的11.5 V减小至3.2 V

亚阈值摆由原来的1.25 V/decade减小至0.9 V/decade。采用

C-V

方法计算了两种器件的陷阱态

结果发现N

O plasma处理过的IGZO-TFT的陷阱态明显小于普通的IGZO-TFT的陷阱态

表明N

O plasma处理SiN

绝缘层是一种改善IGZO-TFT器件性能的有效方法。

Abstract

ndium-gallium-zinc oxide thin film transistor(IGZO-TFT) was fabricated using N

O plasma treated SiN

film as gate insulator and room-temperature deposited IGZO film as active layer. Comparing with the conventional IGZO-TFT

the saturation mobility increased from 4.5 to 8.1 cm

-1

threshold voltage reduced from 11.5 to 3.2 V

threshold swing varied from 1.25 to 0.9 V/dec. The trap states in the N

O plasma treated IGZO-TFT is obviously smaller than that in the conventional IGZO-TFT. Our results indicate that using N

O plasma treated SiN

film as gate insulator is an effective approach for improving IGZO-TFT performance.

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Keywords

references

Chiu C J, Chang S P, Chang S J. High-performance a-IGZO thin-film transistor using Ta2O5 gate dielectric [J]. IEEE Electron Device Lett., 2010, 31(11):1245-1247.[2] Kim C J, Kim S, Lee J H, et al. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors [J]. Appl. Phys. Lett., 2009, 95(25):252103-1-3.[3] Kang D, Lim H, Kim C, et al. Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J]. Appl. Phys. Lett., 2007, 90(19):192101-1-3.[4] Yabuta H, Sano M, Abe K, et al. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering [J]. Appl. Phys. Lett., 2006, 89(11):112123-1-3.[5] Kim Jonghoon, Ahn Byungdu, Lee Choonghee, et al. Characteristics of transparent ZnO based thin film transistors with amorphous HfO2 gate insulators and Ga doped ZnO electrodes [J]. Thin Solid Films, 2008, 516(7):1529-1533.[6] Zhou Fan, Zhang Liang, Li Jun, et al. Effect of Ta2O5 thickness on the performances of ZnO-based thin film transistors [J]. Chin. J. Lumin.(发光学报), 2011, 32(2):188-193 (in English).[7] Navamathavan R, Nirmala R, Lee C R, et al. Effect of NH3 plasma treatment on the device performance of ZnO based thin film transistors [J]. Vacuum, 2011, 85(9):904-907.[8] Martins R, Barquinha P, Ferreira I, et al. Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors [J]. J. Appl. Phys., 2007, 101(4):044505-1-7.[9] Ma Ziguang, Wang Wenxin, Wang Xiaoli, et al. The optical and electrical properties of GaN epitaxial films with SiNx interlayers inserted at different position [J]. Chin. J. Lumin.(发光学报), 2011, 32(10):1014-1019 (in Chinese).

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