Effect of MgO Doped Concentration on Luminescence Properties in Sr2SiO4:Eu2+ Phosphor

SUN Xiao-yuan; LI Chun-jie; HE Xiao-guang; YU Li-jun; GAO Yun-feng; LUO Yong-shi; ZHANG Ji

doi:10.3788/fgxb20123304.0389

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Effect of MgO Doped Concentration on Luminescence Properties in Sr₂SiO₄:Eu²⁺ Phosphor

paper | 更新时间：2020-08-12

- Effect of MgO Doped Concentration on Luminescence Properties in Sr₂SiO₄:Eu²⁺ Phosphor
- Chinese Journal of Luminescence Vol. 33, Issue 4, Pages: 389-393(2012)
- 作者机构：
  
  1. 长春师范学院物理学院,吉林长春,130032
  2. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123304.0389
  CLC： O482.31
- Received：23 December 2011，
  
  Revised：09 February 2012，
  
  Published Online：10 April 2012，
  
  Published：10 April 2012
- 稿件说明：
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孙晓园, 李春杰, 贺小光, 于立军, 高允锋, 骆永石, 张家骅. MgO对Sr2SiO4:Eu2+荧光粉发光性质的影响[J]. 发光学报, 2012,33(4): 389-393

SUN Xiao-yuan, LI Chun-jie, HE Xiao-guang, YU Li-jun, GAO Yun-feng, LUO Yong-shi, ZHANG Jia-hua. Effect of MgO Doped Concentration on Luminescence Properties in Sr2SiO4:Eu2+ Phosphor[J]. Chinese Journal of Luminescence, 2012,33(4): 389-393
孙晓园, 李春杰, 贺小光, 于立军, 高允锋, 骆永石, 张家骅. MgO对Sr2SiO4:Eu2+荧光粉发光性质的影响[J]. 发光学报, 2012,33(4): 389-393 DOI： 10.3788/fgxb20123304.0389.

SUN Xiao-yuan, LI Chun-jie, HE Xiao-guang, YU Li-jun, GAO Yun-feng, LUO Yong-shi, ZHANG Jia-hua. Effect of MgO Doped Concentration on Luminescence Properties in Sr2SiO4:Eu2+ Phosphor[J]. Chinese Journal of Luminescence, 2012,33(4): 389-393 DOI： 10.3788/fgxb20123304.0389.

摘要

通过在Sr

SiO

:Eu

荧光粉中加入MgO

提高了Sr

SiO

:Eu

荧光粉的蓝光和黄光发射带的发射强度

研究了MgO浓度对Sr

SiO

:Eu

荧光粉发光强度的影响。当Mg与Si的量比在1.0附近时

荧光粉的亮度较高

且发光颜色为白色。通过调节Sr

SiO

MgO荧光粉中Eu

的掺杂浓度

可以调节荧光粉的发光颜色。用Sr

SiO

:Eu

MgO和400 nm的InGaN管芯制备的白光LED

色坐标优于'-Sr

SiO

:Eu

和-Sr

SiO

:Eu

荧光粉制成的白光LED

显色指数和流明效率高于-Sr

SiO

:Eu

和'-Sr

SiO

:Eu

制成的白光LED。

Abstract

MgO-doped Sr

SiO

:Eu

phosphors were synthesized. The introduction of MgO strongly enhances the blue and yellow emission intensity of Sr

SiO

:Eu

phosphors. The luminescence properties as a function of MgO and Eu

concentrations were studied. White light emission phosphors were obtained when the molar ratio of Mg and Si is around 1.0 under excitation of 400 nm. White light-emitting diode through the integration of InGaN near-UV chip and Sr

SiO

:Eu

MgO phosphor was fabricated and exhibited better characteristic parameters than that of the '-Sr

SiO

:Eu

and -Sr

SiO

:Eu

phosphors.

关键词

Keywords

references

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