Preparation and Fluorescent Properties of Bi3+ Doped, Yb3+ Doped and Bi3+,Yb3+ Codoped Gd2O3 Phosphors

XIAO Lin-jiu; YAN Feng-qiao; XIE Ying; ZENG Fan; CHEN Yong-jie; LI Wen-ze

doi:10.3788/fgxb20123304.0383

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Preparation and Fluorescent Properties of Bi³⁺ Doped, Yb³⁺ Doped and Bi³⁺,Yb³⁺ Codoped Gd₂O₃ Phosphors

paper | 更新时间：2020-08-12

- Preparation and Fluorescent Properties of Bi³⁺ Doped, Yb³⁺ Doped and Bi³⁺,Yb³⁺ Codoped Gd₂O₃ Phosphors
- Chinese Journal of Luminescence Vol. 33, Issue 4, Pages: 383-388(2012)
- 作者机构：
  
  沈阳化工大学辽宁省稀土化学及应用重点实验室,辽宁沈阳,110142
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123304.0383
  CLC： O482.31
- Received：02 February 2012，
  
  Revised：21 February 2012，
  
  Published Online：10 April 2012，
  
  Published：10 April 2012
- 稿件说明：
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肖林久, 闫凤巧, 谢颖, 曾凡, 陈永杰, 李文泽. 溶胶-凝胶法制备Bi3+,Yb3+单掺和共掺Gd2O3荧光粉及其荧光性能[J]. 发光学报, 2012,33(4): 383-388

XIAO Lin-jiu, YAN Feng-qiao, XIE Ying, ZENG Fan, CHEN Yong-jie, LI Wen-ze. Preparation and Fluorescent Properties of Bi3+ Doped, Yb3+ Doped and Bi3+,Yb3+ Codoped Gd2O3 Phosphors[J]. Chinese Journal of Luminescence, 2012,33(4): 383-388
肖林久, 闫凤巧, 谢颖, 曾凡, 陈永杰, 李文泽. 溶胶-凝胶法制备Bi3+,Yb3+单掺和共掺Gd2O3荧光粉及其荧光性能[J]. 发光学报, 2012,33(4): 383-388 DOI： 10.3788/fgxb20123304.0383.

XIAO Lin-jiu, YAN Feng-qiao, XIE Ying, ZENG Fan, CHEN Yong-jie, LI Wen-ze. Preparation and Fluorescent Properties of Bi3+ Doped, Yb3+ Doped and Bi3+,Yb3+ Codoped Gd2O3 Phosphors[J]. Chinese Journal of Luminescence, 2012,33(4): 383-388 DOI： 10.3788/fgxb20123304.0383.

摘要

利用溶胶-凝胶法制备了Bi

、Yb

单掺和共掺的Gd

荧光粉。研究了Gd

x-y

: Bi

的制备条件并表征了Gd

x-y

: Bi

的荧光性能。由于Gd

: Bi

中Bi

对Yb

的能量传递

: Bi

在Bi

的特征激发峰338 nm激发时

可以产生Yb

的900~1 100 nm近红外特征发射和Bi

的400~700 nm特征发射的两个波段光谱。所制备的Gd

: Bi

荧光材料可将太阳光谱中硅太阳能电池吸收较弱的300~400 nm光转换成有较强吸收的500~700 nm 和1 000 nm附近的近红外光子

提高硅太阳能电池的光伏效率。

Abstract

doped

doped and Bi

codoped Gd

phosphors were prepared by sol-gel method. The preparation conditions of Gd

x-y

:Bi

phosphors were investigated. The phases of the phosphors were characterized

and the fluorescent properties of Gd

x-y

:Bi

were studied. Under the excitation of 338 nm

which is the characteristic excitation of Bi

NIR emissions of Yb

characteristic emission from 900 to 1 100 nm and the characteristic emission of Bi

from 500 to 700 nm have been obtained. That suggests a very efficient energy transfer from Bi

ions to Yb

ions in Gd

:Bi

.The results indicate that the Gd

:Bi

material has potential application in the silicon based solar cells by converting 300~400 nm photon which is almost useless in the silicon solar cell into 400~700 nm and 1 000 nm photons which are absorbed strongly by the Si-solar cell. And the photovoltaic efficiency of the Si-solar cell will be improved.

关键词

Keywords

references

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