Surface Acoustic Wave Based on ZnO Thin Films Grown by RF-MBE

LIU Feng-juan; HU Zuo-fu; LI Zhen-jun; ZHANG Xi-qing

doi:10.3788/fgxb20123303.0328

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Surface Acoustic Wave Based on ZnO Thin Films Grown by RF-MBE

paper | 更新时间：2020-08-12

- Surface Acoustic Wave Based on ZnO Thin Films Grown by RF-MBE
- Chinese Journal of Luminescence Vol. 33, Issue 3, Pages: 328-333(2012)
- 作者机构：
  
  北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室北京,100044
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123303.0328
  CLC： O472.3;O422
- Received：25 December 2011，
  
  Revised：16 January 2011，
  
  Published Online：10 March 2012，
  
  Published：10 March 2012
- 稿件说明：
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刘凤娟, 胡佐富, 李振军, 张希清. 分子束外延生长的ZnO压电薄膜及其声表面波器件特性[J]. 发光学报, 2012,33(3): 328-333

LIU Feng-juan, HU Zuo-fu, LI Zhen-jun, ZHANG Xi-qing. Surface Acoustic Wave Based on ZnO Thin Films Grown by RF-MBE[J]. Chinese Journal of Luminescence, 2012,33(3): 328-333
刘凤娟, 胡佐富, 李振军, 张希清. 分子束外延生长的ZnO压电薄膜及其声表面波器件特性[J]. 发光学报, 2012,33(3): 328-333 DOI： 10.3788/fgxb20123303.0328.

LIU Feng-juan, HU Zuo-fu, LI Zhen-jun, ZHANG Xi-qing. Surface Acoustic Wave Based on ZnO Thin Films Grown by RF-MBE[J]. Chinese Journal of Luminescence, 2012,33(3): 328-333 DOI： 10.3788/fgxb20123303.0328.

摘要

用RF-MBE在蓝宝石(0001)衬底上引入MgO和低温ZnO双缓冲层生长了ZnO薄膜

并制备了声表面波器件。在ZnO薄膜中

仅观测到(0002)面的XRD

且衍射峰增强

半高宽减小

表明ZnO薄膜

轴取向性更好

晶体结构更优。室温下自由激子吸收峰更尖锐和吸收边更陡峭以及仅观测到自由激子发光

且发光线宽变窄、发光强度变大

表明ZnO薄膜缺陷密度减小

薄膜质量提高。测得该ZnO压电薄膜的电阻率高达410

其声表面波的速度高达5 010 m/s。

Abstract

High quality ZnO piezoelectric thin films have been grown by RF-MBE on sapphire (0001) substrate with MgO and ZnO double buffer layers. Only ZnO (0002) diffraction peak was observed in the XRD patterns

with a narrow FWHM of 0.10. A sharp absorption peak and a steep absorption edge were observed in absorption spectra

only one PL peak from free exciton emission

with a narrow FWHM of 12.7 nm

was obtained in PL spectra. The electrical resistivity of the ZnO thin films is up to 410

cm. These results indicate that ZnO thin films have good

-axis orientation with wurtzite structure

low defect densities and low background carrier concentration. This is mainly due to that the MgO and ZnO double buffer layers accommodated the mismatch between the ZnO thin films and the sapphire substrate. The SAW devices based on the high quality ZnO thin films were fabricated. The center frequency of the surface acoustic wave (SAW) filter is 835 MHz

and the SAW propagation speed is up to 5 010 m/s

indicating that the MgO and ZnO double buffer layers not only improved the quality of the ZnO films

but also improved the piezoelectric properties of the films.

关键词

Keywords

references

Takagaki Y, Santos P V, Wiebicke E, et al. Superhigh-frequency surface-acoustic-wave transducers using AlN layers grown on SiC substrates [J]. Appl. Phys. Lett., 2002, 81(14):2538-2540.[2] Lee S H, Jeong H H, Bae S B, et al. Epitaxially grown GaN thin-film SAW filter with high velocity and low insertion loss [J]. IEEE Trans. Electr. Dev., 2001, 48(3):524-529.[3] Zhao Baijun, Yang Hongjun, Wang Xinqing, et al. ZnO/Diamond/Si multi-layer films grown by MOCVD for surface acoustic wave (SAW) devices [J]. Chin. J. Lumin.(发光学报), 2004, 25(3):313-316 (in Chinese).[4] Bensmaine S, Brizoual L L, Elmazria O, et al. SAW devices based on ZnO inclined c-axis on diamond [J]. Diamond Relat. Mater., 2008, 17(7-10):1420-1423.[5] Shih W C, Wang M J, Lin I N. Characteristics of ZnO thin film surface acoustic wave devices fabricated using nanocrystalline diamond film on silicon substrates [J]. Diamond Relat. Mater., 2008, 17(3):390-395.[6] Liu D S, Wu C Y, Shou C S, et al. The preparation of piezoelectric ZnO films by RF magnetron sputtering for layered surface acoustic wave device applications [J]. J. Appl. Phys., 2006, 45(48):3531-3536.[7] Kadota M, Miura T, Minakata M. Piezoelectric and optical properties of ZnO films deposited by an electron-cyclotron-resonance sputtering system [J]. J. Cryst. Growth, 2002, 237-239(1):523-527.[8] Emanetoglu N W, Patounakis G, Lu Y C. Analysis of SAW properties of epitaxial ZnO films grown on R-Al2O3 substrates [J]. IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2001, 48(5):1389-1394.[9] Yong Y J, Kang Y S, Lee J Y. Fabrication of c-axis oriented ZnO/AlN thin films prepared by radio frequency reactive sputtering and development of ZnO/AlN layered structure surface acoustic wave devices [J]. J. Vac. Sci. Technol. B, 2002, 20(1):42-46.[10] Su Shichen, Lv Youming, Zhang Jiying, et al. Substrates temperature influence on the structural and optical properties of ZnO films [J]. Chin. J. Lumin.(发光学报), 2011, 32(7):736-739 (in Chinese).[11] Guo Liang, Zhao Dongxu, Zhang Zhenzhong, et al. Optoelectronic properties of ZnO/Ag/ZnO multiple films [J]. Chin. J. Lumin.(发光学报), 2011, 32(9):920-923 (in Chinese).[12] Water W, Chu S Y. Physical and structural properties of ZnO sputtered films [J]. Mater. Lett., 2002, 55(1-2):67-72.[13] Wang X B, Song C, Li D M, et al. The influence of different doping elements on microstructure, piezoelectric coefficient and resistivity of sputtered ZnO film [J]. Appl. Surf. Sci., 2006, 253(3):1639-1643.[14] Pcz B, El-Shaer A, Bakin A, et al. Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer [J]. J. Appl. Phys., 2006, 100(10):103506-1-7.[15] Chen Y F, Ko H J, Hong S K, et al. Layer-by-layer growth of ZnO epilayer on Al2O3 (0001) by using a MgO buffer layer [J]. Appl. Phys. Lett., 2000, 76(5):559-561.[16] Wang Y Z, Wang S Q, Zhou S M, et al. Effects of sapphire substrate annealing on ZnO epitaxial films grown by MOCVD [J]. Appl. Surf. Sci., 2006, 253(4):1745-1747.[17] Liu F J, Zhang R, Hu Z F, et al. Structural and optical properties of non-polar (112 0) ZnO films grown by plasma-assisted molecular-beam epitaxy [J]. IEEE Trans. Plasma Sci., 2011, 39(2):700-703.[18] Zhang X Q, Yao Z G, Huang S H, et al. Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates [J]. J. Appl. Phys., 2006, 99(6):063709-1-4.[19] Liu H F, Chua S J, Hu G X, et al. Effects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputtering [J]. J. Appl. Phys., 2007, 102(8):083529-1-6.[20] Meaney A, Duclere J R, McGlynn E, et al. Comparison of structural, optical and electrical properties of undoped ZnO thin films grown on r- and c- Al2O3 substrates using pulsed laser deposition [J]. Superlattices and Microst., 2005, 38(4-6):256-264.[21] Kim Y Y, Kang S W, Kong B H, et al. Epitaxial growth of high-temperature ZnO layers on sapphire substrate by magnetron sputtering [J]. Phys. B, 2007, 401-402:408-412.[22] Jin B J, Woo H S, Im S, et al. Relationship between photoluminescence and electrical properties of ZnO thin films grown by pulsed laser deposition [J]. Appl. Surf. Sci., 2001, 169-170:521-524.[23] Wu T T, Wang W S. An experimental study on the ZnO/sapphire layered surface acoustic wave device [J]. J. Appl. Phys., 2004, 96(9):5249-5253.

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