Influence of Substrate Temperature on The Optical and Electrical Properties of GZO Thin Films

CAO Pei-jiang; DENG Hai-feng; LIU Wen-jun; JIA Fang; ZHU De-liang; MA Xiao-cui; LV You-ming

doi:10.3788/fgxb20123303.0318

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Influence of Substrate Temperature on The Optical and Electrical Properties of GZO Thin Films

paper | 更新时间：2020-08-12

- Influence of Substrate Temperature on The Optical and Electrical Properties of GZO Thin Films
- Chinese Journal of Luminescence Vol. 33, Issue 3, Pages: 318-321(2012)
- 作者机构：
  
  深圳大学材料学院深圳市特种功能材料重点实验室,广东深圳,518060
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123303.0318
  CLC： O472+.4
- Received：06 January 2012，
  
  Revised：19 January 2012，
  
  Published Online：10 March 2012，
  
  Published：10 March 2012
- 稿件说明：
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曹培江, 邓海峰, 柳文军, 贾芳, 朱德亮, 马晓翠, 吕有明. 生长温度对Ga掺杂ZnO薄膜光电性能的影响[J]. 发光学报, 2012,33(3): 318-321

CAO Pei-jiang, DENG Hai-feng, LIU Wen-jun, JIA Fang, ZHU De-liang, MA Xiao-cui, LV You-ming. Influence of Substrate Temperature on The Optical and Electrical Properties of GZO Thin Films[J]. Chinese Journal of Luminescence, 2012,33(3): 318-321
曹培江, 邓海峰, 柳文军, 贾芳, 朱德亮, 马晓翠, 吕有明. 生长温度对Ga掺杂ZnO薄膜光电性能的影响[J]. 发光学报, 2012,33(3): 318-321 DOI： 10.3788/fgxb20123303.0318.

CAO Pei-jiang, DENG Hai-feng, LIU Wen-jun, JIA Fang, ZHU De-liang, MA Xiao-cui, LV You-ming. Influence of Substrate Temperature on The Optical and Electrical Properties of GZO Thin Films[J]. Chinese Journal of Luminescence, 2012,33(3): 318-321 DOI： 10.3788/fgxb20123303.0318.

摘要

在不同衬底温度(室温~750 ℃)条件下

采用脉冲激光沉积(PLD)方法在石英玻璃和单晶硅(111)衬底上制备了Ga掺杂ZnO(GZO)薄膜。结果显示:衬底温度的变化导致衬底表面吸附原子扩散速率和脱附速率的不同

从而导致合成薄膜结晶质量的差异

衬底温度450 ℃时制备的GZO薄膜具有最好的结晶特性;GZO薄膜中载流子浓度随衬底温度升高而单调减小的现象与GZO薄膜中的本征缺陷密切相关

晶界散射强度的变化导致迁移率出现先增大后减小的趋势

衬底温度450 ℃时制备的GZO薄膜具有最小的电阻率~0.02 cm;随着衬底温度的升高

薄膜载流子浓度的单调减小导致了薄膜光学带隙变窄

所有合成样品的平均可见光透过率均达到85%以上。采用PLD方法制备GZO薄膜

衬底温度的改变可以对薄膜的光电性能起到调制作用。

Abstract

Gadoped ZnO (GZO) thin films were grown on single crystal silicon (111) and quartz glass substrates by pulsed laser deposition (PLD) method at different substrate temperatures from room temperature to 750 ℃. The change of substrate temperature leads to different diffusion and desorption rates for adsorption atoms resting on substrate surface

and results in different crystalline quality for GZO thin films. The GZO thin film grown at 450 ℃ has the best crystalline quality. The carrier concentration monotonically decreases with the increase of substrate temperature

which is related to the intrinsic defects in films. The Hall mobility first increases and then decreases with the substrate temperature increasing

it results from the variation of grain boundary scattering. And the lowest resistivity ~0.02 cm is obtained in the film prepared at 450 ℃. With the increase of substrate temperature

the optical band gap becomes narrow due to the monotonic increase of carrier concentration. The average transmittance in visible region is above 85% for all the GZO samples. Our results exhibit that the optical and electrical properties of GZO thin films prepared by PLD method can be adjusted by the change of substrate temperature.

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references

Zhang F C, Zhang Z Y, Zhang W H, et al. First principles calculations of electronic structure and optical properties of AZO (ZnO∶Al) [J]. Acta Optica Sinica (光学学报), 2009, 29(4):1025-1031 (in Chinese).[2] Chen X L, Xu B H , Xue J M, et al. Borondoped zinc oxide thin films for largearea solar cells grown by metal organic chemical vapor deposition [J]. Thin Solid Films, 2007, 515(78):3753-3759[3] Abduev A K, Akhmedov A K, Asvarov A S, et al. The structural and electrical properties of Ga doped ZnO and Ga, B codoped ZnO thin films: The effects of additional boron impurity [J]. Solar Energy Mater. Solar Cells, 2007, 91(4):258-260.[4] Wang Xiaowei, Li Chenhui, Ke Wenming, et al. Preparation and present studies of Ga doped zinc oxide thin films technology of gallium zinc oxide thin film and research status [J]. Materials Review, 2011, 25(4):17-23.[5] Cao Peijiang, Lin Chuanqiang, Zeng Yuxiang, et al. The effect of oxygen flow rate on the pulsed deposition of ZnO thin flim morphology and optical properties[J]. Chin. J. Lumin.(发光学报), 2010, 31(2):239-242 (in Chinese).[6] Chen Y, Bagnall D M, Koh H, et al. Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J]. J. Appl. Phys., 1998, 84(7):3912-3918.[7] Zheng Dongmei, Wang Zongchi, Xiao Ronghui. Hydrogenic donor impurity states in a cylindrical wurtzite GaN quantum dot [J]. Chin. J. Lumin.(发光学报), 2010, 31(5):628-634 (in Chinese).[8] Burstein E. Anomalous optical absorption limit in InSb [J]. Phys. Rev., 1954, 93(3):632-633.

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