Analysis on Thermal Effect of Optically Pumped Semiconductor Lasers with DBM by Finite Element Method

WANG Fei; WANG Xiao-hua; WANG Jin-yan; FANG Dan; WEI Zhi-peng; FANG Xuan

doi:10.3788/fgxb20123303.0309

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Analysis on Thermal Effect of Optically Pumped Semiconductor Lasers with DBM by Finite Element Method

paper | 更新时间：2020-08-12

- Analysis on Thermal Effect of Optically Pumped Semiconductor Lasers with DBM by Finite Element Method
- Chinese Journal of Luminescence Vol. 33, Issue 3, Pages: 309-313(2012)
- 作者机构：
  
  1. 长春理工大学高功率半导体激光国家重点实验室,吉林长春,130022
  2. 长春理工大学光电工程学院,吉林长春,130022
  3. 长春理工大学理学院,吉林长春,130022
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123303.0309
  CLC： TN248.4
- Received：14 November 2011，
  
  Revised：23 December 2011，
  
  Published Online：10 March 2012，
  
  Published：10 March 2012
- 稿件说明：
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王菲, 王晓华, 王金艳, 房丹, 魏志鹏, 方铉. 光泵浦双反射带半导体激光器的热效应有限元分析[J]. 发光学报, 2012,33(3): 309-313

WANG Fei, WANG Xiao-hua, WANG Jin-yan, FANG Dan, WEI Zhi-peng, FANG Xuan. Analysis on Thermal Effect of Optically Pumped Semiconductor Lasers with DBM by Finite Element Method[J]. Chinese Journal of Luminescence, 2012,33(3): 309-313
王菲, 王晓华, 王金艳, 房丹, 魏志鹏, 方铉. 光泵浦双反射带半导体激光器的热效应有限元分析[J]. 发光学报, 2012,33(3): 309-313 DOI： 10.3788/fgxb20123303.0309.

WANG Fei, WANG Xiao-hua, WANG Jin-yan, FANG Dan, WEI Zhi-peng, FANG Xuan. Analysis on Thermal Effect of Optically Pumped Semiconductor Lasers with DBM by Finite Element Method[J]. Chinese Journal of Luminescence, 2012,33(3): 309-313 DOI： 10.3788/fgxb20123303.0309.

摘要

给出了808 nm/980 nm双反射带布拉格反射镜的反射谱线

建立了光泵浦双反射带半导体激光器件的热学模型及其内部热载荷分布形式

运用有限元分析方法

详细分析了双反射带光泵浦半导体激光器件的热学特性。结果表明

对于激射光反射率为99.96%的单反射带和双反射带布拉格反射镜结构的垂直外腔面发射半导体激光器件

前者的散热性能较好

而后者的最大温升明显低于前者。本文的分析结果可为半导体激光器件的结构优化和实验研究提供理论参考。

Abstract

The reflectivity spectra of 808 nm/980 nm double band mirror (DBM) are characterized in the paper. According to the structure of the DBM

the thermal model of Optically Pumped Vertical-External-Cavity Surface Emitting Semiconductor Lasers (OPS-VECSELs) with DBM is constructed and the distribution of thermal load in the VECSEL wafer is presented. The thermal characterization of OPS-VECSELs with DBM is analyzed in detail by finite element method. The results indicate that VECSEL wafer with DBM has better thermal properties and poorer thermal performance than with DBM when they have the same reflectivity (

=99.96%). So VECSEL wafer with DBM is more suitable for making high power semiconductor laser than with DBM. The theoretical analysis results will be provided as theory reference for VECSEL wafer structure optimization and experimental.

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Keywords

references

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