Fabrication of Polymer Light-emitting Diodes Using All-solution Method

ZHAO Fan-fan; LIANG Chun-jun; HE Zhi-qun

doi:10.3788/fgxb20123302.0206

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Fabrication of Polymer Light-emitting Diodes Using All-solution Method

paper | 更新时间：2020-08-12

- Fabrication of Polymer Light-emitting Diodes Using All-solution Method
- Chinese Journal of Luminescence Vol. 33, Issue 2, Pages: 206-209(2012)
- 作者机构：
  
  发光与光信息教育部重点实验室北京交通大学光电子技术研究所北京,100044
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123302.0206
  CLC： TN383+.1
- Received：14 October 2011，
  
  Revised：24 November 2011，
  
  Published Online：10 February 2012，
  
  Published：10 February 2012
- 稿件说明：
移动端阅览
赵凡凡, 梁春军, 何志群. 全湿法制备聚合物电致发光器件[J]. 发光学报, 2012,33(2): 206-209

ZHAO Fan-fan, LIANG Chun-jun, HE Zhi-qun. Fabrication of Polymer Light-emitting Diodes Using All-solution Method[J]. Chinese Journal of Luminescence, 2012,33(2): 206-209
赵凡凡, 梁春军, 何志群. 全湿法制备聚合物电致发光器件[J]. 发光学报, 2012,33(2): 206-209 DOI： 10.3788/fgxb20123302.0206.

ZHAO Fan-fan, LIANG Chun-jun, HE Zhi-qun. Fabrication of Polymer Light-emitting Diodes Using All-solution Method[J]. Chinese Journal of Luminescence, 2012,33(2): 206-209 DOI： 10.3788/fgxb20123302.0206.

摘要

利用全溶液方法制备了聚合物电致发光器件并研究了器件的性能。器件的所有膜层

包括发光层和上电极层均采用溶液湿法获得

完全摒弃了真空蒸镀工艺。利用二次溶剂掺杂获得的PEDOT∶PSS聚合物薄膜的电导率达到608.7 S/cm。在240 nm的厚度时

聚合物电极膜层的面电阻约为68 /□; 当膜层厚度为1 m时

薄膜的面电阻可低于16 /□。采用溶液滴涂方法制备的高电导PEDOT∶PSS聚合物薄膜作为上电极替代通常所用的铝电极

所制备的聚合物发光器件的开启电压约为4 V。

Abstract

All-solution method is used to fabricate polymer light-emitting diodes(PLEDs). The electron injection buffer layer and the light-emitting polymer layer are obtained by spin coating. As for the top electrode

we use drop-casted highly conductive PEDOT∶PSS film as transparent anode layer to obtain a high device performance. The conductivity of 608.7 S/cm for the PEDOT∶PSS film is achieved by secondary doping. At the thickness of 240 nm

the sheet resistance of the polymer layer is 68 /□

and at 1 micron

the sheet resistance of the film is less than 10 /□.

I-V

characteristics of the devices show a threshold voltage of ~ 4 V under forward bias.

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Keywords

references

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