Effects of Inserted LiF Thin Film Between EML and ETL on OLEDs Performance

HE Xiao-guang; TIAN Miao-miao; XUN Xian-chao; LI Chun-jie

doi:10.3788/fgxb20123302.0192

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Effects of Inserted LiF Thin Film Between EML and ETL on OLEDs Performance

paper | 更新时间：2020-08-12

- Effects of Inserted LiF Thin Film Between EML and ETL on OLEDs Performance
- Chinese Journal of Luminescence Vol. 33, Issue 2, Pages: 192-196(2012)
- 作者机构：
  
  1. 中国科学院长春应用化学研究所高分子物理与化学国家重点实验室,吉林长春,130022
  2. 长春师范学院物理学院,吉林长春,130032
  3. 空军航空大学,吉林长春,130022
- 作者简介：
- 基金信息：
  
  T Development Plan Project of China (20160414043GH)
- DOI：10.3788/fgxb20123302.0192
  CLC： TN383+.1
- Received：15 November 2011，
  
  Revised：19 December 2011，
  
  Published Online：10 February 2012，
  
  Published：10 February 2012
- 稿件说明：
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贺小光, 田苗苗, 荀显超, 李春杰. 发光区插入超薄LiF层对有机电致发光器件性能的影响[J]. 发光学报, 2012,33(2): 192-196

HE Xiao-guang, TIAN Miao-miao, XUN Xian-chao, LI Chun-jie. Effects of Inserted LiF Thin Film Between EML and ETL on OLEDs Performance[J]. Chinese Journal of Luminescence, 2012,33(2): 192-196
贺小光, 田苗苗, 荀显超, 李春杰. 发光区插入超薄LiF层对有机电致发光器件性能的影响[J]. 发光学报, 2012,33(2): 192-196 DOI： 10.3788/fgxb20123302.0192.

HE Xiao-guang, TIAN Miao-miao, XUN Xian-chao, LI Chun-jie. Effects of Inserted LiF Thin Film Between EML and ETL on OLEDs Performance[J]. Chinese Journal of Luminescence, 2012,33(2): 192-196 DOI： 10.3788/fgxb20123302.0192.

摘要

着重对比了在以DCM掺杂Alq

为发光层的红光器件的发光区插入超薄LiF层后器件性能的改善。插入超薄LiF层后

器件的最大工作电流密度为487 mA/cm

相应的最大电致发光亮度为76 740 cd/m

最大外量子效率为5.9%。器件内量子效率为40%

超过了基于有机荧光小分子发光材料的有机电致发光器件的内量子效率的理论极限值25%。对器件内单线态及三线态激子的形成过程进行了分析

并推测:超薄LiF层的插入提高了器件内单线态电荷转移态/三线态电荷转移态的形成比例

进而提高了器件内单线态激子在激子总数中的比例

最终提高了器件的内量子效率。同时

超薄LiF层的插入改变了发光层内局域的内部电场

使器件的外量子效率不仅没有随电流密度的增加而降低

反而非线性增加。

Abstract

The performance of two DCM∶Alq

based on red organic light-emitting diodes(OLEDs) were compared. In device A

ultrathin LiF was inserted between emitting layer and electron transporting layer

the other without inserting layer was named device B. As a result

device A showed a maximum EQE(external quantum efficiency) of 5.9%

which was obtained under the highest brightness 76 740 cd/m

with current density of 487 mA/cm

. Correspondingly

the internal quantum efficiency of 40% was far exceeded the theoretical upper limit of 25% for fluorescent OLEDs. We attributed the unusual phenomenon to the manipulation of the charge transfer state mixing and the electrical field effect on the excitons.

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references

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