Analysis of Air-cooled Heat System in Hundred-watt Level Semiconductor Laser Module

ZHANG Zhi-jun; LIU Yun; FU Xi-hong; ZHANG Jin-long; SHAN Xiao-nan; ZHU Hong-bo; WANG Li-jun

doi:10.3788/fgxb20123302.0187

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Analysis of Air-cooled Heat System in Hundred-watt Level Semiconductor Laser Module

paper | 更新时间：2020-08-12

- Analysis of Air-cooled Heat System in Hundred-watt Level Semiconductor Laser Module
- Chinese Journal of Luminescence Vol. 33, Issue 2, Pages: 187-191(2012)
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院研究生院北京,100039
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123302.0187
  CLC： TN248.4
- Received：01 September 2011，
  
  Revised：13 October 2011，
  
  Published Online：10 February 2012，
  
  Published：10 February 2012
- 稿件说明：
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张志军, 刘云, 付喜宏, 张金龙, 单肖楠, 朱洪波, 王立军. 百瓦级半导体激光器模块的风冷散热系统分析[J]. 发光学报, 2012,33(2): 187-191

ZHANG Zhi-jun, LIU Yun, FU Xi-hong, ZHANG Jin-long, SHAN Xiao-nan, ZHU Hong-bo, WANG Li-jun. Analysis of Air-cooled Heat System in Hundred-watt Level Semiconductor Laser Module[J]. Chinese Journal of Luminescence, 2012,33(2): 187-191
张志军, 刘云, 付喜宏, 张金龙, 单肖楠, 朱洪波, 王立军. 百瓦级半导体激光器模块的风冷散热系统分析[J]. 发光学报, 2012,33(2): 187-191 DOI： 10.3788/fgxb20123302.0187.

ZHANG Zhi-jun, LIU Yun, FU Xi-hong, ZHANG Jin-long, SHAN Xiao-nan, ZHU Hong-bo, WANG Li-jun. Analysis of Air-cooled Heat System in Hundred-watt Level Semiconductor Laser Module[J]. Chinese Journal of Luminescence, 2012,33(2): 187-191 DOI： 10.3788/fgxb20123302.0187.

摘要

对百瓦级半导体激光器风冷散热系统进行分析

利用ANSYS 有限元分析软件对高功率半导体激光模块器件的温度场分布进行了模拟和优化设计。为百瓦级大功率半导体激光模块风冷系统工艺方案的选择提供了依据

并据此进行了实验验证。

Abstract

A hundred-watt level semiconductor laser air cooling system was analyzed by ANSYS finite element analysis software. The temperature distribution and air cooling system of this high-power semiconductor laser module were simulated and optimized. It provides the basis of the choice program for 100 W-class high-power semiconductor laser module air cooling technology

and the relative experiment has been verified.

关键词

Keywords

references

Yang Ye, Liu Yun, Wang Lijun, et al. Electro-optic properties of 850 nm high-brightness tapered lasers [J]. Chin. J. Lumin.(发光学报), 2011, 32(6):593-597 (in Chinese).[2] Duesterberg R, Xu L, Skidmore J A, et al. 100 W High-brightness multi-emitter laser pump [J]. SPIE, 2011, 7918:79180V-1-8.[3] Shan Xiaonan, Zhang Jing, Wang Lijun, et al. 980 nm high-power laser therapy instrument design [J]. China Laser (中国激光), 2006, 33(supplement):435-438 (in Chinese).[4] Wang Xiangpeng, Liang Xuemei, Li Zaijin, et al. 880 nm semiconductor laser diode arrays and fiber coupling module [J].Opt. Precision Eng.(光学精密工程), 2010, 18(5):1021-1027 (in Chinese).[5] Liu Yun, Liao Xinsheng, Qin Li, et al. Oxygen-free copper micro-channel heat sink of high power semiconductor laser [J]. Chin. J. Lumin.(发光学报), 2005, 26(1):109-114 (in Chinese).[6] Wu Deyong, Yan Diyong, Tang Chun, et al. Thermal analysis of high average power laser diode arrays [J]. High Power Laser and Particle Beams (强激光与粒子束), 2001, 13(5):537-540 (in Chinese).[7] Tang Zhiwei, Yu Changming, Ma Chongfang. et al. Explorationon evaluation criterion of heat pipe performances [J]. Journal of Beijing University of Technology (北京工业大学学报), 2003, 29(1):55-58 (in Chinese).[8] Pan Huapu, Huang Liwei, Li Rui, et al. Finite element mode of GaN based LED and the optimization of the mesastructure [J]. Chin. J. Lumin.(发光学报), 2007, 28(1):114-120 (in Chinese).[9] Lin Zhiqi, Zhang Yang, Lang Yonghui, et al. Constant temperature control of semiconductor laser based on temperature characteristics of pn junction [J]. Chin. J. Lumin.(发光学报), 2009, 30(2):223-227 (in Chinese).[10] Dai Shuchun. Influence of power effect on the thermal resistance of power LED [J]. Chin. J. Lumin.(发光学报), 2010, 31(6):877-881 (in Chinese).

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Related Institution

State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China

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Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China

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