Effects of Acid Treatment and Cathode Reduction on The Luminescence and Stability of Porous Silicon

YUAN Mei-ling; TANG Lu; WU Zhen-qi; WANG Qing-nian

doi:10.3788/fgxb20123302.0146

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Effects of Acid Treatment and Cathode Reduction on The Luminescence and Stability of Porous Silicon

paper | 更新时间：2020-08-12

- Effects of Acid Treatment and Cathode Reduction on The Luminescence and Stability of Porous Silicon
- Chinese Journal of Luminescence Vol. 33, Issue 2, Pages: 146-149(2012)
- 作者机构：
  
  1. 南昌大学物理系,江西南昌,330047
  2. 南昌大学信息工程学院,江西南昌,330029
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123302.0146
  CLC： O433.1
- Received：12 September 2011，
  
  Revised：05 December 2011，
  
  Published Online：10 February 2012，
  
  Published：10 February 2012
- 稿件说明：
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元美玲, 唐鹿, 吴真琦, 汪庆年. 阴极还原和酸处理对多孔硅稳定性和发光特性的改善[J]. 发光学报, 2012,33(2): 146-149

YUAN Mei-ling, TANG Lu, WU Zhen-qi, WANG Qing-nian. Effects of Acid Treatment and Cathode Reduction on The Luminescence and Stability of Porous Silicon[J]. Chinese Journal of Luminescence, 2012,33(2): 146-149
元美玲, 唐鹿, 吴真琦, 汪庆年. 阴极还原和酸处理对多孔硅稳定性和发光特性的改善[J]. 发光学报, 2012,33(2): 146-149 DOI： 10.3788/fgxb20123302.0146.

YUAN Mei-ling, TANG Lu, WU Zhen-qi, WANG Qing-nian. Effects of Acid Treatment and Cathode Reduction on The Luminescence and Stability of Porous Silicon[J]. Chinese Journal of Luminescence, 2012,33(2): 146-149 DOI： 10.3788/fgxb20123302.0146.

摘要

采用两种简单的多孔硅后处理方法

即阴极还原和酸处理来提高多孔硅的发光特性。结果表明

对多孔硅进行阴极还原处理

能明显改善多孔硅的稳定性;对多孔硅进行酸处理

能有效提高多孔硅的发光强度。结合阴极还原和酸处理两实验技术的特点

对所制备的多孔硅先进行阴极还原处理

再进行酸处理

结果表明该方法能较好地提高多孔硅的发光效率和发光稳定性。

Abstract

Two simple methods

including acid treatment and cathode reduction treatment

are employed to treat porous silicon material for improving the luminescence properties of porous silicon material and obtaining good results. The results show that cathode reduction can significantly improve the stability of porous silicon and acid treatment can effectively improve the luminous intensity. When both of these two methods are adopted

cathode reduction prior to acid treatment can obtain a better result than opposite process.

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Keywords

references

Canham L T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers [J]. Appl.Phys.Lett., 1990, 57 (10):1046-1048.[2] Zhao Meihong, Fang yan. Fabrication of Si nanpoarticles and the optical properties [J]. J. OptoelectronicsLaser (光电子激光), 2008, 19(4):486-489 (in Chinese).[3] Li Gubo, Zhang Fulong, Chen Huajie, et al. Surface passivation of porous silicon by nitrogen [J]. Acta Physica Sinica(物理学报), 1996, 45(4):1232-1238 (in Chinese).[4] Li Xinjian, Zhang Yuheng. Nondegrading photoluminescence in porous silicon [J]. Physics (物理), 1999, 28(4):195-197 (in Chinese).[5] Liu Xiaobing, Xiong Zuhong, Shi Xianghua, et al. Surface passivation of porous silicon by SiOx and Al2O3 films [J]. Chin. J. Semicond.(半导体学报), 2000, 21(1):38-43 (in Chinese).[6] Yu Xianwen, Zhu Rongjin, Zhu Ziqiang, et al. Drying methods of porous silicon [J].Chin. J. Semicond.(半导体学报), 2003, 24(6):663-666 (in Chinese).

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