Influence of Al3+ on The Photoluminescence of Ge/Al-SiO2 Films

CHEN Hu; WANG Jia-xian

doi:10.3788/fgxb20123301.0032

您当前的位置：

首页 >

文章列表页 >

Influence of Al³⁺ on The Photoluminescence of Ge/Al-SiO₂ Films

paper | 更新时间：2020-08-12

- Influence of Al³⁺ on The Photoluminescence of Ge/Al-SiO₂ Films
- Chinese Journal of Luminescence Vol. 33, Issue 1, Pages: 32-35(2012)
- 作者机构：
  
  华侨大学信息科学与工程学院, 福建厦门 361021
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123301.0032
  CLC： O482.31
- Received：27 September 2011，
  
  Revised：19 October 2011，
  
  Published Online：10 January 2012，
  
  Published：10 January 2012
- 稿件说明：
移动端阅览
陈虎, 王加贤. Al3+对Ge/Al-SiO2薄膜光致发光的影响[J]. 发光学报, 2012,33(1): 32-35

CHEN Hu, WANG Jia-xian. Influence of Al3+ on The Photoluminescence of Ge/Al-SiO2 Films[J]. 发光学报, 2012,33(1): 32-35
陈虎, 王加贤. Al3+对Ge/Al-SiO2薄膜光致发光的影响[J]. 发光学报, 2012,33(1): 32-35 DOI： 10.3788/fgxb20123301.0032.

CHEN Hu, WANG Jia-xian. Influence of Al3+ on The Photoluminescence of Ge/Al-SiO2 Films[J]. 发光学报, 2012,33(1): 32-35 DOI： 10.3788/fgxb20123301.0032.

摘要

采用磁控溅射及后退火技术制备了不同组份和不同退火温度的Ge、Al共掺SiO

薄膜。通过对样品的X射线光电子能谱(XPS)测试

确定了薄膜的成分和结构特征;同时还测试了样品的光致发光谱(PL谱)

得到了峰值位于420 nm附近的紫光发射峰和峰值位于470 nm的蓝光发射峰。实验结果表明

Al的掺杂不仅可以显著地提高GeNOV中心和SiNOV中心的光发射效率

还可以促进GeNOV缺陷和SiNOV缺陷中心的形成

进而有利于薄膜的光致发光。

Abstract

Different contents of Ge and Al co-doped SiO

films are prepared by RF magnetron sputtering technique and thermal annealing. From XPS spectra determination

we make sure the films contents and structure.Then we also determine the films PL spectra

which exhbit a V-band in around 420 nm beam and a B-band in 470 nm beam.Our experiments suggest that doped Al not improves luminescence efficiency of GeNOV and SiNOV defects centres but is of advantage to the defect centres fabrication.

关键词

Keywords

references

Kim K, Suh M S, Kim T S, et al. Room-temperature visible photoluminescence from silicon-rich oxide layers deposited by an electron cyclotron resonance plasma source [J]. Appl. Phys. Lett., 1996, 69(25):3908-3910.[2] Rebohle L, Borany J V, Yankov R A, et al. Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers [J]. Appl. Phys. Lett., 1997, 71(19):2809-2811.[3] Zhang J Y, Bao X M, Ye Y H, et al. Blue and red photoluminescence from Ge+ implanted SiO2 films and its multiple mechanism [J]. Appl. Phys. Lett., 1998, 73(13):1790-1792.[4] Rebohle L, Borany J V, Skorupa W, et al. Strong photoluminescence of Sn-implanted thermally grown SiO2 layers [J]. Appl. Phys. Lett., 2000, 77(7):969-971.[5] Li Lianbi, Chen Zhiming. Influence of growth temperature on photoluminescence of thin SiCGe films on 6H-SiC [J].Chin. J. Lumin.(发光学报), 2010, 31(3):373-377 (in Chinese).[6] Li Cong, Xu Jun, Lin Tao, et al. Structural, eelectronic and optical properties of ultra-thin hydrogenated amorphous germanium films [J]. Chin. J. Lumin.(发光学报), 2011, 32(11):1165-1170 (in Chinese).[7] Wu X M, Dong Y M, Zhuge L J, et al. Room-temperature visible electroluminescence of Al-doped silicon oxide films [J]. Appl. Phys. Lett., 2001, 78(26):4121-4123.[8] Guo Hengqun, Yang Linlin, Wang Qiming. The preparation and photoluminescence of Al-doped nc-Si-SiO2 composite films by r.f. magnetron sputtering [J]. Function and Material (功能材料), 2006, 11(37):1706-1708 (in Chinese).[9] Rebohle L, Borany J, Frob H, et al. Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements [J]. Appl. Phys. B, 2000, 71(2):131-151.[10] Zou J P, Mei Y F, Shen J K, et al. Violet photoluminescence from Ge+-implanted Si-based nanoscale SiO2 islands array [J]. Phys. Lett. A, 2002, 301(1-2):96-100.[11] Song H Z, Bao X M. Visible photoluminescence from silicon-ion-implanted SiO2 film and its multiple mechanisms [J]. Phys. Rev. B, 1997, 55(11):6988-6993.[12] Mei Y F, Siu G G, Huang X H, et al. Growth and optical properties of Ge oxide thin film on silicon substrate by pulsed laser deposition [J]. Phys. Lett. A, 2004, 331(3-4):248-251.[13] Rozo C, Fonseca L F, Jaque D, et al. Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films [J]. J. Lumin., 2008, 128(5-6):897-900.[14] Kanjilal A, Rebohle L, Voelskow M, et al. Enhanced blue-violet emission by inverse energy transfer to the Ge-related oxygen deficiency centers via Er3+ ions in metal-oxide semiconductor structures [J]. Appl. Phys. Lett., 2009, 94(5):051903-1-3.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Luminescence Properties of Eu³⁺， Dy³⁺， Na⁺ Doped Sr₃AlO₄F

Research Progress in Photoluminescent Aerogels

Preparation and Characterization of Zn²⁺-doped MgGa₂O₄∶Ni²⁺ NIR-Ⅱ Phosphors and Their Application in Imaging

Localization Features of Carrier Emission Recombination in Deep-ultraviolet AlGaN-based Multiple Quantum Well Structure

Photoluminescence Properties of Sr₆Lu₂Al₄O₁₅∶Tb³⁺ Phosphor

Related Author

LIANG Ruihan

ZHAO Huiming

ZHANG Yanji

LI Wenxia

MI Xiaoyun

CHEN Xiumei

LI Xingyu

YUAN Ze

Related Institution

Research Institute of Changchun University of Science and Technology in Chongqing

School of Materials Science and Engineering， Changchun University of Science and Technology

School of Flexible Electronics（Future Technologies） & Institute of Advanced Materials（IAM）， Nanjing Tech University

School of Physics， Northeast Normal University

Institute of Novel Semiconductors， School of Microelectronics， Shandong University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰