Effects of Annealing Treatment on the Photoluminescence Properties of W∶Bi4Ge3O12 and Bi12GeO20 Crystals

YU Ping-sheng; SU Liang-bi; TANG Hui-li; GUO Xin; ZHAO Heng-yu; YANG Qiu-hong; XU Jun

doi:10.3788/fgxb20113208.0825

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Effects of Annealing Treatment on the Photoluminescence Properties of W∶Bi₄Ge₃O₁₂ and Bi₁₂GeO₂₀ Crystals

paper | 更新时间：2020-08-12

- Effects of Annealing Treatment on the Photoluminescence Properties of W∶Bi₄Ge₃O₁₂ and Bi₁₂GeO₂₀ Crystals
- Chinese Journal of Luminescence Vol. 32, Issue 8, Pages: 825-829(2011)
- 作者机构：
  
  1. 上海大学材料科学与工程学院上海,200444
  2. 中国科学院上海硅酸盐研究所透明与光功能无机材料重点实验室上海,201800
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20113208.0825
  CLC： O482.31
- Received：27 March 2011，
  
  Revised：17 June 2011，
  
  Published Online：22 August 2011，
  
  Published：22 August 2011
- 稿件说明：
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俞平胜, 苏良碧, 唐慧丽, 郭鑫, 赵衡煜, 杨秋红, 徐军. 退火处理对W∶Bi4Ge3 O12和Bi12GeO20晶体发光性能的影响[J]. 发光学报, 2011,32(8): 825-829

YU Ping-sheng, SU Liang-bi, TANG Hui-li, GUO Xin, ZHAO Heng-yu, YANG Qiu-hong, XU Jun. Effects of Annealing Treatment on the Photoluminescence Properties of W∶Bi4Ge3O12 and Bi12GeO20 Crystals[J]. Chinese Journal of Luminescence, 2011,32(8): 825-829
俞平胜, 苏良碧, 唐慧丽, 郭鑫, 赵衡煜, 杨秋红, 徐军. 退火处理对W∶Bi4Ge3 O12和Bi12GeO20晶体发光性能的影响[J]. 发光学报, 2011,32(8): 825-829 DOI： 10.3788/fgxb20113208.0825.

YU Ping-sheng, SU Liang-bi, TANG Hui-li, GUO Xin, ZHAO Heng-yu, YANG Qiu-hong, XU Jun. Effects of Annealing Treatment on the Photoluminescence Properties of W∶Bi4Ge3O12 and Bi12GeO20 Crystals[J]. Chinese Journal of Luminescence, 2011,32(8): 825-829 DOI： 10.3788/fgxb20113208.0825.

摘要

通过提拉法制备了W∶Bi

和Bi

GeO

晶体

测试了晶体的吸收光谱、光致发光谱和发光衰减时间等。W∶Bi

的可见光发光强度比纯Bi

有所增强

而且N

中退火处理对W∶Bi

发光有进一步增强作用。Bi

GeO

在N

中退火处理后在745 nm附近有发光峰

其衰减时间为10 s左右。两种晶体退火处理后发光均增强

认为是低价Bi离子发光所致。

Abstract

W∶Bi

and Bi

GeO

crystals were prepared by Czochralski(Cz) method. The absorption

photoluminescence (PL) and PL lifetime spectra were investigated. The results revealed the PL intensity of W∶Bi

was stronger than that of Bi

GeO

and annealing in N

can increase the PL intensity of W∶Bi

. Near infrared PL (at about 745 nm) was observed in Bi

GeO

annealed in N

and the lifetime was about 10 s. The mechanisms of luminescence in W∶Bi

and annealed Bi

GeO

was discussed.

关键词

Keywords

references

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