Influence of n(S) ∶n(Cd) in Precursors on The Structural and Luminescent Properties of CdS Films

ZHAO Xiang-hui; WEI Ai-xiang; ZHAO Yu

doi:10.3788/fgxb20113208.0793

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Influence of n(S) ∶n(Cd) in Precursors on The Structural and Luminescent Properties of CdS Films

paper | 更新时间：2020-08-12

- Influence of n(S) ∶n(Cd) in Precursors on The Structural and Luminescent Properties of CdS Films
- Chinese Journal of Luminescence Vol. 32, Issue 8, Pages: 793-797(2011)
- 作者机构：
  
  广东工业大学材料与能源学院, 广东广州 510006
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20113208.0793
  CLC： O482.31
- Received：16 February 2011，
  
  Revised：12 April 2011，
  
  Published Online：22 August 2011，
  
  Published：22 August 2011
- 稿件说明：
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赵湘辉, 魏爱香, 招瑜. 反应前驱物中n(S)∶n(Cd)对CdS薄膜结构及发光特性的影响[J]. 发光学报, 2011,32(8): 793-797

ZHAO Xiang-hui, WEI Ai-xiang, ZHAO Yu. Influence of n(S) ∶n(Cd) in Precursors on The Structural and Luminescent Properties of CdS Films[J]. Chinese Journal of Luminescence, 2011,32(8): 793-797
赵湘辉, 魏爱香, 招瑜. 反应前驱物中n(S)∶n(Cd)对CdS薄膜结构及发光特性的影响[J]. 发光学报, 2011,32(8): 793-797 DOI： 10.3788/fgxb20113208.0793.

ZHAO Xiang-hui, WEI Ai-xiang, ZHAO Yu. Influence of n(S) ∶n(Cd) in Precursors on The Structural and Luminescent Properties of CdS Films[J]. Chinese Journal of Luminescence, 2011,32(8): 793-797 DOI： 10.3788/fgxb20113208.0793.

摘要

采用化学水浴以CdCl

O、CS(NH

)

、NH

Cl、NH

O和去离子水作为反应前驱物制备CdS纳米晶薄膜。采用扫描电镜(SEM)、X射线衍射(XRD)、透射光谱和稳态荧光光谱

研究了反应前驱物中不同的

(S) ∶

(Cd)对所制备的CdS薄膜的形貌、结构和光学性能的影响。结果表明:反应前驱物中

(S) ∶

(Cd)3 ∶1时均能制备出由纳米颗粒组成的、具有立方晶系结构的CdS薄膜;CdS薄膜均为富镉的n型半导体

薄膜中的S/Cd原子比约为0.9 ∶1;CdS薄膜的吸收边在450 nm左右

在510~2 500 nm范围内透射率均在70%以上

在500 nm处有一较强的发光峰。

Abstract

CdS thin film was prepared by chemical bath deposition at different

(S) ∶

(Cd) using the precursors of CdCl

CS(NH

)

O and deionized water. The surface morphology

structure and optical properties of all the samples have been analyzed by scanning electron microscopy

X-ray diffraction

transmission and photoluminescence (PL) spectra. The results indicated that spherical particle like morphology and cubic structure CdS thin films were obtained at

(S) ∶

(Cd) greater than or equal 3 ∶1.All CdS thin films with a close stoichiomerty S/Cd=0.91 were Cd-rich belong to n-type semiconductor.The absorption edge of CdS films was about 450 nm

the optical transmittance was more than 70% in the wavelength range from 510 to 2 500 nm.Intensity of the photoluminescence peak at 500 nm is stronger.

关键词

Keywords

references

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