Influence of Annealing Temperature and CdS QD-doping on The Photoluminescence Properties of Eu3+ Doped Silica Xerogels

XU Lei-hua; QIANG Ying-huai; JIANG Li; Gu Yong-qin

doi:10.3788/fgxb20113208.0784

您当前的位置：

首页 >

文章列表页 >

Influence of Annealing Temperature and CdS QD-doping on The Photoluminescence Properties of Eu³⁺ Doped Silica Xerogels

paper | 更新时间：2020-08-12

- Influence of Annealing Temperature and CdS QD-doping on The Photoluminescence Properties of Eu³⁺ Doped Silica Xerogels
- Chinese Journal of Luminescence Vol. 32, Issue 8, Pages: 784-788(2011)
- 作者机构：
  
  1. 中国矿业大学材料科学与工程学院,江苏徐州,221116
  2. 中国矿业大学化工学院, 江苏徐州 221116
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20113208.0784
  CLC： O482.31
- Received：12 February 2011，
  
  Revised：18 May 2011，
  
  Published Online：22 August 2011，
  
  Published：22 August 2011
- 稿件说明：
移动端阅览
徐磊华, 强颖怀, 江利, 顾永琴. 处理温度及CdS量子点对Eu3+掺杂SiO2干凝胶光致发光性质的影响[J]. 发光学报, 2011,32(8): 784-788

XU Lei-hua, QIANG Ying-huai, JIANG Li, Gu Yong-qin. Influence of Annealing Temperature and CdS QD-doping on The Photoluminescence Properties of Eu3+ Doped Silica Xerogels[J]. Chinese Journal of Luminescence, 2011,32(8): 784-788
徐磊华, 强颖怀, 江利, 顾永琴. 处理温度及CdS量子点对Eu3+掺杂SiO2干凝胶光致发光性质的影响[J]. 发光学报, 2011,32(8): 784-788 DOI： 10.3788/fgxb20113208.0784.

XU Lei-hua, QIANG Ying-huai, JIANG Li, Gu Yong-qin. Influence of Annealing Temperature and CdS QD-doping on The Photoluminescence Properties of Eu3+ Doped Silica Xerogels[J]. Chinese Journal of Luminescence, 2011,32(8): 784-788 DOI： 10.3788/fgxb20113208.0784.

摘要

以正硅酸乙酯为原料

采用溶胶-凝胶法制备了Eu

掺杂的SiO

凝胶和Eu

/CdS量子点共掺杂的SiO

干凝胶。考察了不同温度下处理2 h对Eu

掺杂SiO

凝胶发光性质的影响。在40 ℃干燥的样品荧光光谱中

没有出现614 nm发射峰

455 nm处的峰也很弱;随着干燥处理温度的升高

455 nm和614 nm处的发射逐渐增强;当温度高于400 ℃后

强度又都随之下降。同时

还考察了200 ℃条件下处理2 h的Eu

/CdS量子点共掺杂的SiO

干凝胶的发光性质及CdS量子点对Eu

荧光的影响。

Abstract

Silica xerogels doped with Eu

ions and co-doped with Eu

/CdS nanoparticles were prepared through a two-step hydrolysis process. The effect of annealing temperature on photoluminescence properties of Eu

-doped silica xerogel was investigated. The results showed that the photoluminescence intensity of Eu

-doped silica xerogels was significantly dependent on the annealing temperature

which was closely related to the amount of the defect in xerogel network. The emission intensity increased with the annealing temperature from 40 ℃ to 300 ℃ . But when the temperature exceeded 300 ℃

the intensity decreased with the annealing temperature. The study of the photoluminescence of co-doped xerogels showed that the intrinsic emissions due to

transitions of Eu

were observed

and the intensity was sensitive to the surface states of CdS particles and of the porous silica gel.

关键词

Keywords

references

Jiang Dong, Hu Xiaoyun, Zhang Dekai, et al. The luminescent properties of Eu doped SiO2 nano-matrix [J]. Chin. J. Lumin. (发光学报), 2009, 30 (2):247-251 (in Chinese).[2] Li Caixia, Li Qiang. Luminescent properties of Eu2+ doped borosilicate glass [J]. Chin. J. Lumin. (发光学报), 2011, 32 (2):149-153 (in Chineses).[3] Li Qiyuan, Wei Changping, Sun Xiaofei. Optical properties of ZnO/SiO2 composite film [J]. Chin. J. Lumin. (发光学报), 2009, 30 (3):385-388 (in Chinese).[4] Cai Jinjun, Wang Yi, Pan Huanhuan, et al. Preparation and photoluminescence of green Zn2SiO4∶Mn2＋ phosphor by sol-gel method [J]. Chin. J. Lumin. (发光学报), 2010, 31 (1):75-78 (in Chinese).[5] Fan Xianping, Wang Minquan, Xiong Guohong. Spectroscopic studies of rare earth ions in silica glasses prepared by the sol-gel process [J]. Mater. Lett., 1996, 27 (4-5):177-181.[6] Tissue B M. Synthesis and luminescence of lanthanide ions in nanoscale insulating hosts [J]. Chem. Mater., 1998, 10 (10):2837-2845.[7] Li Yuejuan, Meng Jianxin, Cao Liwei. Preparation and properties of near-infrared Yb(P4)(CoP) dyes doped polystyrene/silica nanoparticles [J]. Chin. J. Lumin. (发光学报), 2009, 30 (3):351-355 (in Chinese).[8] Correa-Duarte M A, Giersog M, Liz-Marzn L M. Stabilization of CdS semiconductor nanoparticles against photodegradation by silica coating procedure [J]. Chem. Phys. Lett., 1998, 286 (5-6):497-501.[9] Mu J, Gu D Y, Xu Z. Synthesis and stabilization of CdS nanoparticles embedded in silica nanospheres [J]. Appl. Phys. A, 2005, 80 (7):1425-1429.[10] Rosa-Fox N, Piňero M, Litrn R, et al. Photoluminescence from CdS quantum dots in silica gel [J]. J. Sol-Gel Sci. Techn., 2003, 26 (1-3):947-951.[11] Tomas S A, Lozada-Morales R, Portillo O. Characterization of chemical bath deposited CdS thin films doped with methy-lene blue and Er3+ [J]. Eur. Phys. J. Special Topics, 2008, 153 :299-302.[12] Huang Yahui, Peng Shaoqin, Li Yuexiang. The preparation and performance of composite CdS／Eu3+-TiO2 [J]. Nonferrous metals(Extractive Metallugy) (有色金属冶炼部分), 2009(4):34-36 (in Chinese).[13] Tomokatsu H, Tamilselvan S, Masayuki N. Energy transfer between Eu3+ ions and CdS quantum dots in sol-gel derived CdS/SiO2 ∶Eu3+ gel [J]. J. Sol-Gel Sci. Tech., 2000, 19 (1-3):779-783.[14] Yoldas B E. Thermochemically induced photoluminescence in sol-gel-derived oxide networks [J].J. Non-Cryst. Solids, 1992, 147-178 :614-620.[15] Green W H, Le K P, Grey J, et al. White phosphors from a silica-carboxylate sol-gel precursor that lack metal activator ions [J]. Science, 1997, 276 (5320):1826-1828.[16] Xu Leihua, Qiang Yinghuai, Jiang Li. Photoluminescent properties of CdS quantum dots doped in silicon xerogel [J]. Chin. J. Lumin. (发光学报), 2011, 32 (1):227-231 (in Chinese).[17] Murakoshi K, Hosokawa H J, Saitoh M, et al. Preparation of size-controlled hexagonal CdS nanocrystallites and the characteristics of their surface structures [J]. J. Chem. Soc., 1998, 94 (4):579-586.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Photoluminescent Properties of CdS Quantum Dots Doped in Silica Xerogel

Preparation and Photoluminescence Properties of ZnS Nanocrystals Co-doped with Mn²⁺ and Pb²⁺

Luminescence Properties of Eu³⁺， Dy³⁺， Na⁺ Doped Sr₃AlO₄F

Research Progress in Photoluminescent Aerogels

Preparation and Characterization of Zn²⁺-doped MgGa₂O₄∶Ni²⁺ NIR-Ⅱ Phosphors and Their Application in Imaging

Related Author

XU Lei-hua

QIANG Ying-huai

JIANG Li

XU Yang-zi

HU He

LIANG Ruihan

ZHAO Huiming

ZHANG Yanji

Related Institution

School of Materials Science and Engineering, China University of Mining and Technology

Faculty of Physics and Electronic Technology, Hubei University

Faculty of Chemistry and Material Science, Hubei University

Research Institute of Changchun University of Science and Technology in Chongqing

School of Materials Science and Engineering， Changchun University of Science and Technology

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰