Visible and Infrared Electroluminescence Property of Erbium Doped Silicon-rich SiO2 MOS-LED

LIU Hai-xu; SUN Jia-ming; MENG Fan-jie; HOU Qiong-qiong

doi:10.3788/fgxb20113208.0749

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Visible and Infrared Electroluminescence Property of Erbium Doped Silicon-rich SiO₂ MOS-LED

paper | 更新时间：2020-08-12

- Visible and Infrared Electroluminescence Property of Erbium Doped Silicon-rich SiO₂ MOS-LED
- Chinese Journal of Luminescence Vol. 32, Issue 8, Pages: 749-754(2011)
- 作者机构：
  
  南开大学物理科学学院天津,300071
- 作者简介：
- 基金信息：
  
  "973"
- DOI：10.3788/fgxb20113208.0749
  CLC： O482.31
- Received：09 February 2011，
  
  Revised：17 June 2011，
  
  Published Online：22 August 2011，
  
  Published：22 August 2011
- 稿件说明：
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刘海旭, 孙甲明, 孟凡杰, 侯琼琼. Er离子注入的富硅SiO2 MOS-LED的可见和红外电致发光特性[J]. 发光学报, 2011,32(8): 749-754

LIU Hai-xu, SUN Jia-ming, MENG Fan-jie, HOU Qiong-qiong. Visible and Infrared Electroluminescence Property of Erbium Doped Silicon-rich SiO2 MOS-LED[J]. Chinese Journal of Luminescence, 2011,32(8): 749-754
刘海旭, 孙甲明, 孟凡杰, 侯琼琼. Er离子注入的富硅SiO2 MOS-LED的可见和红外电致发光特性[J]. 发光学报, 2011,32(8): 749-754 DOI： 10.3788/fgxb20113208.0749.

LIU Hai-xu, SUN Jia-ming, MENG Fan-jie, HOU Qiong-qiong. Visible and Infrared Electroluminescence Property of Erbium Doped Silicon-rich SiO2 MOS-LED[J]. Chinese Journal of Luminescence, 2011,32(8): 749-754 DOI： 10.3788/fgxb20113208.0749.

摘要

通过Er离子和Si离子注入并结合高温退火制备了Er掺杂的富硅SiO

薄膜以及ITO/SiON/富硅SiO

∶Er/Si MOS结构电致发光器件。研究了富Si浓度的变化对Er

离子掺杂的电致发光器件的发光性能和传导特性的影响。发现不同Si含量对Er

离子的不同能级的电致发光会产生不同作用。在富Si量小于5%的条件下

主要由Si离子注入产生氧空位缺陷发光中心(Si-ODC)

它们和Er

离子的高能级之间存在着共振能量传递

增强了Er

离子的522 nm绿色发光峰强度。在富Si含量大于5%时

过量的Si在退火时形成了纳米硅微晶

电子在纳米硅微晶之间的隧穿改变了载流子输运机制

降低了过热电子的平均能量

导致Er

离子的所有发光峰的猝灭。

Abstract

Metal-oxide-semiconductor structure of ITO/Si-rich SiO

∶Er/Si containing erbium ions and silicon nanocrystals was fabricated by ion implantation of Si and Er combined with post-annealing. The electroluminescence spectra and current-voltage characteristics were measured to investigate the influence of silicon concentration on the excitation mechanism of luminescence centers and conductance process. It was found that the excitation mechanism of erbium ions was variational in the MOS-LED with silicon content. For the silicon concentration less than 5%

the upper levels of erbium can be excited by resonant energy transfer from silicon-oxygen deficiency centers

which induce an enhancement of the 522 nm peak emission intensity of Er

ion. For the silicon concentration above 5%

the excess silicon formed silicon nanocrystals by post-annealing. The direct tunneling of electrons between silicon nanocrystals dominate the conductance

resulting a decrease of average energy of hot electrons and quenching of all the electroluminescence peaks of erbium.

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Keywords

references

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