GaN-based PIN Detectors for X-ray Detector

FU Kai; YU Guo-hao; LU Min

doi:10.3788/fgxb20113207.0720

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GaN-based PIN Detectors for X-ray Detector

paper | 更新时间：2020-08-12

- GaN-based PIN Detectors for X-ray Detector
- Chinese Journal of Luminescence Vol. 32, Issue 7, Pages: 720-723(2011)
- 作者机构：
  
  1. 中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州,215123
  2. 中国科学院研究生院北京,100039
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20113207.0720
  CLC： O472.3;TN364.2
- Received：15 February 2011，
  
  Revised：24 April 2011，
  
  Published Online：22 July 2011，
  
  Published：22 July 2011
- 稿件说明：
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付凯, 于国浩, 陆敏. GaN基PIN结构X射线探测器[J]. 发光学报, 2011,32(7): 720-723

FU Kai, YU Guo-hao, LU Min. GaN-based PIN Detectors for X-ray Detector[J]. Chinese Journal of Luminescence, 2011,32(7): 720-723
付凯, 于国浩, 陆敏. GaN基PIN结构X射线探测器[J]. 发光学报, 2011,32(7): 720-723 DOI： 10.3788/fgxb20113207.0720.

FU Kai, YU Guo-hao, LU Min. GaN-based PIN Detectors for X-ray Detector[J]. Chinese Journal of Luminescence, 2011,32(7): 720-723 DOI： 10.3788/fgxb20113207.0720.

摘要

使用GaN基材料制备了PIN结构核辐射探测器

研究了探测器对X射线响应的多方面性能。在没有X射线照射时

探测器具有很小的漏电流

在-10 V时小于0.1 nA。对探测器的X射线的响应时间特性进行了分析和模拟

给出了很好的物理机制解释。研究了信噪比随外加偏压的变化

并得到了最佳信噪比对应的工作电压为-20 V。

Abstract

GaN-based PIN radiation detectors were fabricated

and various response properties of the detectors under X-ray irradiation were studied. In the absence of X-ray irradiation

the detectors have very low leakage current less than 0.1 nA at -10 V. Time response of the detectors to X-ray was analyzed and simulated

following a reasonable interpretation of the physical mechanism. The relationship between signal to noise ratio(SNR) and applied bias was investigated

and an optimum voltage of -20 V corresponding to the best SNR was found.

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Keywords

references

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