Effects of Swift Heavy Ion Irradiations on the Photoluminescent Properties of Amorphous SiO2 Thin Films

LIU Chun-bao; WANG Zhi-guang

doi:10.3788/fgxb20113206.0608

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Effects of Swift Heavy Ion Irradiations on the Photoluminescent Properties of Amorphous SiO₂ Thin Films

paper | 更新时间：2020-08-12

- Effects of Swift Heavy Ion Irradiations on the Photoluminescent Properties of Amorphous SiO₂ Thin Films
- Chinese Journal of Luminescence Vol. 32, Issue 6, Pages: 608-611(2011)
- 作者机构：
  
  1. 中国科学院近代物理研究所,甘肃兰州,730000
  2. 菏泽学院物理系,山东菏泽,274015
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20113206.0608
  CLC： O482.31;O571.33
- Received：26 January 2011，
  
  Revised：23 March 2011，
  
  Published Online：22 June 2011，
  
  Published：22 June 2011
- 稿件说明：
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刘纯宝, 王志光. 快重离子辐照对非晶态SiO2 薄膜光致发光谱的影响[J]. 发光学报, 2011,32(6): 608-611

LIU Chun-bao, WANG Zhi-guang. Effects of Swift Heavy Ion Irradiations on the Photoluminescent Properties of Amorphous SiO2 Thin Films[J]. Chinese Journal of Luminescence, 2011,32(6): 608-611
刘纯宝, 王志光. 快重离子辐照对非晶态SiO2 薄膜光致发光谱的影响[J]. 发光学报, 2011,32(6): 608-611 DOI： 10.3788/fgxb20113206.0608.

LIU Chun-bao, WANG Zhi-guang. Effects of Swift Heavy Ion Irradiations on the Photoluminescent Properties of Amorphous SiO2 Thin Films[J]. Chinese Journal of Luminescence, 2011,32(6): 608-611 DOI： 10.3788/fgxb20113206.0608.

摘要

用湿氧化法在单晶硅表面生长了非晶态SiO

薄膜

再用高能Pb和Xe离子对薄膜进行辐照

最后用荧光光谱分析了辐照参数(剂量、电子能损值)与发光特性改变的相关性。研究发现

快重离子辐照能显著影响薄膜的发光特性

进一步分析显示

辐照导致了SiO

薄膜内OSiO缺陷、缺氧缺陷和非桥式氧空位缺陷的产生

且缺氧缺陷和非桥式氧空位缺陷的数量会随Pb离子辐照剂量的增加而增多

而OSiO缺陷和缺氧缺陷的形成需要较高的电子能损值。

Abstract

Amorphous SiO

thin films with about 500 nm in thickness were thermally grown on single crystalline silicon. These SiO

/Si samples were irradiated at room temperature (RT) by 853 MeV Pb-ions to 510

110

210

or 510

ions/cm

and by 308 MeV Xe-ions to 110

or 510

ions/cm

respectively. The variation of photoluminescence (PL) properties of these samples was investigated at RT using a fluorescent spectroscopy. The obtained results showed that Pb/Xe-ion irradiation led to significant changes of the PL properties and the variation of the PL properties depend strongly on the fluence of the Pb-ion irradiations and electronic energy loss of ions. For examples

huge PL peaks located at about 473 nm and 645 nm can be seen in PL spectra of 510

Pb-ions/cm

irradiated sample. Furthermore

with increasing of Pb-ion irradiation dose the intensity of these PL peaks increased. This implied that some micro-structure modifications like defects were induced by swift heavy ion irradiations

such as non-bridging oxygen defects (SiO

)

oxygen-vacancies defects (SiSi) and SiO related defects (OSiO). Special light emitters will be achieved by using proper ion irradiation conditions

and it will be very useful for the synthesis of new type of SiO

-based light-emission materials.

关键词

Keywords

references

Zhou Jianwei, Liang Jingqiu, Liang Zhongzhu, et al. Research on optical properties of silicon nanowire arrays [J]. Chin. J. Lumin. (发光学报), 2010, 31 (6):894-898 (in Chinese).[2] Du Yufan, Yi Lixin, Wang Shenwei, et al. Effect of Si nanocrystals size on photoluminescence intensity of Si nanocrystals embedded in Si/SiO2 superlattices after Ce3+ implantation [J]. Chin. J. Lumin. (发光学报), 2009, 30 (2):243-246 (in Chinese).[3] Xiong Yijing, Zhang Meng, Xiong Chuanbing, et al. Investigation of strain of GaN light-emitting diode films transferred to metal substrate from Si(111) [J]. Chin. J. Lumin. (发光学报), 2010, 31 (4):531-537 (in Chinese).[4] Xiao Youpeng, Mo Chunlan, Qiu Chong, et al. The aging characteristics of GaN-based blue LED on Si substrate [J]. Chin. J. Lumin. (发光学报), 2010, 31 (3):364-368 (in Chinese).[5] Garrido B, Samitier J, Morante J R, et al. Configurational statistical model for the damaged structure of silicon oxide after ion implantation [J]. Phys. Rev. B, 1994, 49 (21):14845-14849.[6] Song H Z, Bao X M, Li N S, et al. Relation between electroluminescence and photoluminescence of Si+-implanted SiO2 [J]. J. Appl. Phys., 1997, 82 (8):4028-4032.[7] Zhang J G, Wang X X, Cheng B W, et al. Near infrared photoluminescence from Yb, Al co-implanted SiO2 films on silicon [J]. Chin. Phys. Lett., 2006, 23 (8):2183-2186.[8] Ziegler J F. SRIM-2003 [J]. Nucl. Instr. and Meth. B, 2004, 219-220 :1027-1036.[9] Flora Li, Arokia Nathan. CCD Image Sensors in Deep-Ultraviolet [M]. Edited by Haltes H, Fujita H, Liepmann D. Berlin: Springer Press, 2005:129.[10] Seol K S, Ohki Y, Nishikawa H, et al. Effect of implanted ion species on the decay kinetics of 2.7 eV photoluminescence in thermal SiO2 films [J]. J. Appl. Phys., 1996, 80 (11):6444-6447.[11] Jensen J, Razpet A, Skupinski M, et al. Ion track formation below 1 MeV/u in thin films of amorphous SiO2 [J]. Nucl. Instr. and Meth. B, 2006, 243 (1):119-126.[12] Jensen J, Razpet A, Skupinski M, et al. Ion tracks in amorphous SiO2 irradiated with low and high energy heavy ions [J]. Nucl. Instr. and Meth. B, 2006, 245 (1):269-273.[13] Toulemonde M, Dufour C, Paumier E. Transient thermal-process after a high-energy heavy-ion irradiation of amorphous metals and semiconductors [J]. Phys. Rev. B. 1992, 46 (22):14362-14369.

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