Effects of SiON Passivation Layer on Reliability of GaN Based Green LED on Silicon Substrate

QIU Hong; LIU Jun-lin; WANG Li; JIANG Feng-yi

doi:10.3788/fgxb20113206.0603

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Effects of SiON Passivation Layer on Reliability of GaN Based Green LED on Silicon Substrate

paper | 更新时间：2020-08-12

- Effects of SiON Passivation Layer on Reliability of GaN Based Green LED on Silicon Substrate
- Chinese Journal of Luminescence Vol. 32, Issue 6, Pages: 603-607(2011)
- 作者机构：
  
  南昌大学国家硅基LED工程技术研究中心,江西南昌,330047
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20113206.0603
  CLC： TN312.8;O482.31
- Received：11 November 2010，
  
  Revised：17 April 2011，
  
  Published Online：22 June 2011，
  
  Published：22 June 2011
- 稿件说明：
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邱虹, 刘军林, 王立, 江风益. SiON钝化膜对硅衬底氮化镓绿光LED可靠性的影响[J]. 发光学报, 2011,32(6): 603-607

QIU Hong, LIU Jun-lin, WANG Li, JIANG Feng-yi. Effects of SiON Passivation Layer on Reliability of GaN Based Green LED on Silicon Substrate[J]. Chinese Journal of Luminescence, 2011,32(6): 603-607
邱虹, 刘军林, 王立, 江风益. SiON钝化膜对硅衬底氮化镓绿光LED可靠性的影响[J]. 发光学报, 2011,32(6): 603-607 DOI： 10.3788/fgxb20113206.0603.

QIU Hong, LIU Jun-lin, WANG Li, JIANG Feng-yi. Effects of SiON Passivation Layer on Reliability of GaN Based Green LED on Silicon Substrate[J]. Chinese Journal of Luminescence, 2011,32(6): 603-607 DOI： 10.3788/fgxb20113206.0603.

摘要

研制了4种不同表面钝化类型Si衬底GaN基绿光LED

分别标记为样品A、B、C、D。样品A无钝化层

样品B为台面SiON钝化

样品C为侧面SiON钝化

样品D为台面和侧面均钝化。将4种样品进行了常温60 mA(电流密度312 A/cm

)下168 h的加速老化

并对比了老化前后的

I-V

和光衰等特性。结果表明:侧边的SiON钝化层可有效抑制有源区内非辐射复合缺陷的增加

从而有效降低器件老化后的漏电流和光衰。与台面上的SiON相比

侧边的SiON对钝化起到了决定性作用。

Abstract

The green LED with vertical structure was fabricated by transferring the epilayers of GaN-based LED grown on Si (111) substrate to a new Si substrate. Four groups of LED with chip size of 200 m200 m were fabricated

labeled as sample A

C and D

respectively. Sample A was uncoated. Top surface of sample B

sidewall of sample C and both top surface and sidewall of sample D were coated with SiON passivation layer under the same experimental condition. Electrical and optical properties were investigated after 168 hours accelerated aging under 60 mA DC current at room temperature. The results show that the sidewall-SiON layer could decrease the generation of non-recombination centers in the active layer. Thus it could reduce leakage currents and the luminous decay. Comparing to the top-surface SiON

the sidewall SiON played a decisive role in improving the reliability of the LED .

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Keywords

references

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Related Institution

National Institute of LED on Silicon Substrate, Nanchang University

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Engineering Research Center for Optoelectronics of Guangdong Province, Department of Physics, School of Science, South China University of Technology

Neo-Neon LED lighting International Ltd., Heshan

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