YANG Ye, LIU Yun, QIN Li, ZHANG Jin-long, PENG Hang-yu, WANG Ye, LI Zai-jin, HU Li-ming, SHI Jing-jing, WANG Chao, NING Yong-qiang, WANG Li-jun. Electro-optic Properties of 850 nm High-brightness Tapered Lasers[J]. Chinese Journal of Luminescence, 2011,32(6): 593-597
YANG Ye, LIU Yun, QIN Li, ZHANG Jin-long, PENG Hang-yu, WANG Ye, LI Zai-jin, HU Li-ming, SHI Jing-jing, WANG Chao, NING Yong-qiang, WANG Li-jun. Electro-optic Properties of 850 nm High-brightness Tapered Lasers[J]. Chinese Journal of Luminescence, 2011,32(6): 593-597 DOI: 10.3788/fgxb20113206.0593.
Electro-optic Properties of 850 nm High-brightness Tapered Lasers
High-brightness tapered laser diode at 850 nm was fabricated based on the AlGaInAs/A1GaAs chip with graded-index waveguide separate confinement hetero-structure. The tapered laser has better performance than the broad laser under the same condition. The lateral divergence angles of the tapered laser and the broad laser were 4 and 6 at the output power of 1 W
while the beam propagation factor M
2
were 2.8 and 9.2
respectively. The slope efficiency of the tapered laser had a high value of 0.58 W/A and the conversion efficiency reached 30% in the output power 1.40 W under the injection current of 3 A. The facts indicated the tape-red laser would be an ideal choice for high brightness high power laser diodes.
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references
Zhu Liyan, Fu Xiuhua. The technical development of the 850 nm high-luminance semiconductor laser's film [J]. Journal of Changchun University of Science and Technology (长春理工大学学报), 2007, 30 (1):18-20 (in Chinese).[2] Qu Zhou, Liu Yang, Liu Bo. High power semiconductor laser and its applications in military [J]. OME Information (光机电信息), 2006, 23 (1):52-55 (in Chinese).[3] Liu Yun, Liao Xinsheng, Qin Li, et al. Oxygen-free copper microchannel heat sink of high power semiconductor laser [J]. Chin. J. Lumin. (发光学报), 2005, 26 (1):109-114 (in Chinese).[4] Liang Xuemei1, Lv Jinka, Cheng Liwen, et al. Structural design of vertical-external-cavity surface-emitting semiconductor laser with 920 nm [J]. Chin. J. Lumin. (发光学报), 2010, 31 (1):79-85 (in English).[5] Cheng Liwen, Liang Xuemei, Qin Li, et al. Theoretical analysis of key parameters of 980nm optically pumped semiconductor vertical external cavity surface emitting laser [J]. Chin. J. Lumin. (发光学报), 2008, 29 (4):713-715 (in Chinese).[6] Ma Qiang, Tian Zhenhua, Wang Zhenfu, et al. A theoretical model of high power VCSEL based on the thermal-offset-current [J]. Chin. J. Lumin. (发光学报), 2009, 30 (4):463-466 (in Chinese).[7] Adamiec P, Sumpf B, Rdiger I, et al. Tapered lasers emitting at 650 nm with 1 W output power with nearly diffraction-limited beam quality [J]. Optics Lett., 2009, 34 (16):2456-2458.[8] Dittmar F, Klehr A, Sumpf B, et al. 9 W output power from an 808 nm tapered diode laser in pulse mode operation with nearly diffraction-limited beam quality [J]. IEEE Quantum Electronics, 2007, 13 (5):1194-1199.[9] Kelemen M T, Weber J, Bihlmann G, et al. Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power [J]. Electronics Lett., 2005, 41 (18):1011-1013.[10] Hwang R Y, Luh S W, Hsu J K, et al. Critical comparison of DH, SCH, and GRIN-SCH-SQW 780 nm ridge-waveguide lasers [J]. SPIE, 1992, 1813 :178-184.[11] Wright D, Greve P, Fleischer J, et al. Laser beam width, divergence and beam propagation factor-an international standardization approach [J]. Optical and Quantum Electronics, 1992, 24 (9):993-1000.
Laboratory of Mecical Laser Technology, Chinese Academy of Sciences, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences
Bimberg Chinese-German Center for Green Photonics & State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
University of Chinese Academy of Sciences
Institute of Information and Communication Technology, Bangladesh University of Engineering and Technology