Electroluminescence of Heterostructures Formed by p+-Si and TiO2 Films Derived from Oxidation of Sputtered Ti Films

ZHANG An-bang; MA Xiang-yang; JIN Lu; YANG De-ren

doi:10.3788/fgxb20113205.0471

您当前的位置：

首页 >

文章列表页 >

Electroluminescence of Heterostructures Formed by p⁺-Si and TiO₂ Films Derived from Oxidation of Sputtered Ti Films

paper | 更新时间：2020-08-12

- Electroluminescence of Heterostructures Formed by p⁺-Si and TiO₂ Films Derived from Oxidation of Sputtered Ti Films
- Chinese Journal of Luminescence Vol. 32, Issue 5, Pages: 471-475(2011)
- 作者机构：
  
  浙江大学硅材料国家重点实验室,浙江杭州,310027
- 作者简介：
- 基金信息：
  
  973"
- DOI：10.3788/fgxb20113205.0471
  CLC： TN304;O482.31
- Received：28 November 2010，
  
  Revised：29 December 2010，
  
  Published Online：22 May 2011，
  
  Published：22 May 2011
- 稿件说明：
移动端阅览
张安邦, 马向阳, 金璐, 杨德仁. 溅射的Ti 薄膜热氧化形成的TiO2 薄膜与p+-Si 形成的异质结的电致发光[J]. 发光学报, 2011,32(5): 471-475

ZHANG An-bang, MA Xiang-yang, JIN Lu, YANG De-ren. Electroluminescence of Heterostructures Formed by p+-Si and TiO2 Films Derived from Oxidation of Sputtered Ti Films[J]. Chinese Journal of Luminescence, 2011,32(5): 471-475
张安邦, 马向阳, 金璐, 杨德仁. 溅射的Ti 薄膜热氧化形成的TiO2 薄膜与p+-Si 形成的异质结的电致发光[J]. 发光学报, 2011,32(5): 471-475 DOI： 10.3788/fgxb20113205.0471.

ZHANG An-bang, MA Xiang-yang, JIN Lu, YANG De-ren. Electroluminescence of Heterostructures Formed by p+-Si and TiO2 Films Derived from Oxidation of Sputtered Ti Films[J]. Chinese Journal of Luminescence, 2011,32(5): 471-475 DOI： 10.3788/fgxb20113205.0471.

摘要

利用磁控溅射法以不同条件在重掺硼硅片(p

-Si)上制备Ti薄膜

经过一定条件下的热氧化转化为TiO

薄膜

从而形成TiO

-Si异质结。研究表明:要使TiO

-Si异质结产生显著的电致发光

其中的TiO

薄膜必须呈现单一的锐钛矿相

这就要求在较低的功率下溅射获得晶粒尺寸较小的Ti薄膜。此外

TiO

的薄膜厚度需要控制在合理的范围。文中对上述结果的物理机制进行了探讨。

Abstract

TiO

-Si heterostructures were formed by thermal oxidation of the sputtered Ti films on heavily boron-doped silicon (p

-Si) substrates. In order to make the TiO

-Si heterostructures more suitable for electroluminescence

the TiO

films should be anastate in crystal structure. This required the precursor Ti films possess small crystal grains. Such Ti films could be sputtered at relatively low sputtering power. Moreover

the thickness of TiO

films should be controlled in a desirable range. The related mechanisms for the above-mentioned results have been discussed.

关键词

Keywords

references

Chen Hua. Calculation of optical properties in anatase TiO2 [J]. Chin. J. Lumin. (发光学报), 2009, 30 (5):697-701(in Chinese).[2] Yu Haihu, Yu Dingshan, Zhou Lingde, et al. Structural phase transition and photoluminescence of TiO2 nano-crystals [J]. Chin. J. Lumin.(发光学报), 2006, 27 (2):239-242 (in Chinese).[3] Weinberger B R, Garber R B. Titanium dioxide photocatalysts produced by reactive magnetron sputtering [J]. Appl. Phys. Lett., 1995, 66 (18):2409-2411.[4] Krishna M G, Rao K N, Mohan S. Properties of ion assisted deposited titania films [J]. J. Appl. Phys., 1993, 73 (1): 434-438.[5] Zeman P, Takabayashi S. Self-cleaning and antifogging effects of TiO2 films prepared by radio frequency magnetron sputtering [J]. J. Vac. Sci. Technol. A, 2002, 20 (2):388-393.[6] Tang H, Prasad K, Sanjines R, et al. TiO2 anatase thin films as gas sensors [J]. Sens. Actuators B, 1995, 26 (1):71-75.[7] Hoffmann M R, Martin S T, Choi W, et al. Environmental applications of semiconductor photocatalysis [J]. Chem. Rev., 1995, 95 (1):69-96.[8] Munnix S, Schmeits M. Origin of defect states on the surface of TiO2 [J]. Phys. Rev. B, 1985, 31 (6):3369-3371.[9] Plugaru R, Cremades A, Piqueras J. The effect of annealing in different atmospheres on the luminescence of polycrystalline TiO2 [J]. J. Phys.: Condens. Matter, 2004, 16 (2):s261-s268.[10] Cronemeyer D C. Infrared absorption of reduced rutile TiO2 single crystals [J]. Phys. Rev., 1959, 113 (5):1222-1226.[11] Knenkamp R, Word R C, Godinez M. Electroluminescence in nanoporous TiO2 solid-state heterojunctions [J]. Nanotechnology, 2006, 17 (8):1858-1861.[12] Nakato Y, Tsumura A, Tsubomura H. Photo- and electroluminescence spectra from an n-TiO2 semiconductor electrode as related to the intermediates of the photooxidation reaction of water [J]. J. Phys. Chem., 1983, 87 (13):2402-2405.[13] Zhang Y Y, Ma X Y, Chen P L, et al. Electroluminescence from TiO2/p+-Si heterostructure [J]. Appl. Phys. Lett., 2009, 94 (6):061115-1-3.[14] Zhang Y Y, Ma X Y, Chen P L, et al. Crystallization behaviors of TiO2 films derived from thermal oxidation of evaporated and sputtered titanium films [J]. J. Alloys Compd., 2009, 480 (2):938-941.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Enhancement of Electroluminescence from TiO₂/p⁺-Si Heterostructured-based Devices Through Boron-doping of TiO₂ Films

Research Progress of Neutral Blue Iridium Complexes in OLEDs

Efficient Red Iridium（Ⅲ） Complexes with Four-membered Ring Ir-S-C-S Framework and OLED Performance

Performance of Narrow-linewidth Red Emitted Electroluminescent Devices Based on Quasi-two-dimensional Perovskite

Enhanced Electroluminescence Properties of Tin-based Perovskites by Vitamin C Additives

Related Author

SHA Yi-ping

ZHU Chen

ZHAO Ze-gang

LI Dong-sheng

WU Shaohua

LU Guangzhao

ZHONG Xiangyong

XIE Qifei

Related Institution

Institute of Information Technology， Shenzhen Institute of Information Technology

College of Chemistry and Materials Science， Hebei Normal University

College of Chemistry and Chemical Engineering， Shangqiu Normal University

State Key Laboratory of Rare Earth Resource Utilization， Changchun Institute of Applied Chemistry， Chinese Academy of Sciences

College of Chemical Engineering， Zhejiang University of Technology

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰