Structural and Ferromagnetism Properties of NH3 Plasma Post-treated Co-doped ZnO Thin Film

CAO Ping; BAI Yue; ZHAO Dong-xu; SHEN De-zhen

doi:10.3788/fgxb20113204.0383

您当前的位置：

首页 >

文章列表页 >

Structural and Ferromagnetism Properties of NH₃ Plasma Post-treated Co-doped ZnO Thin Film

paper | 更新时间：2020-08-12

- Structural and Ferromagnetism Properties of NH₃ Plasma Post-treated Co-doped ZnO Thin Film
- Chinese Journal of Luminescence Vol. 32, Issue 4, Pages: 383-386(2011)
- 作者机构：
  
  1. 长春工程学院, 吉林长春 130012
  2. 中国科学院长春光学精密机械与物理研究所, 吉林长春 130033
  3. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20113204.0383
  CLC： O472.3
- Received：10 June 2010，
  
  Revised：10 December 2010，
  
  Published：2011
- 稿件说明：
移动端阅览
曹萍, 白越, 赵东旭, 申德振. NH3 等离子体后处理Co掺杂ZnO的薄膜结构及磁学性能[J]. 发光学报, 2011,32(4): 383-386

CAO Ping, BAI Yue, ZHAO Dong-xu, SHEN De-zhen. Structural and Ferromagnetism Properties of NH3 Plasma Post-treated Co-doped ZnO Thin Film[J]. Chinese Journal of Luminescence, 2011,32(4): 383-386
曹萍, 白越, 赵东旭, 申德振. NH3 等离子体后处理Co掺杂ZnO的薄膜结构及磁学性能[J]. 发光学报, 2011,32(4): 383-386 DOI： 10.3788/fgxb20113204.0383.

CAO Ping, BAI Yue, ZHAO Dong-xu, SHEN De-zhen. Structural and Ferromagnetism Properties of NH3 Plasma Post-treated Co-doped ZnO Thin Film[J]. Chinese Journal of Luminescence, 2011,32(4): 383-386 DOI： 10.3788/fgxb20113204.0383.

摘要

通过电化学沉积方法成功生长了Co掺杂ZnO的薄膜

但并没有实现室温下的铁磁性。通过NH

等离子体的后处理

导致有一部分N原子进入了ZnO晶格替代了一部分O格位

从而在ZnO中产生空穴。在空穴间接交换作用下

ZnCoO薄膜中产生了被束缚的磁极子

产生了室温下的铁磁性。

Abstract

The Co-doped ZnO film was grown by electrodeposition method

the carrier concentration is 10

-3

but the sample is paramagnetism. The electrons can not induce the room temperature ferromagnetism

only the introducing of additional carriers can enhance the ferromagnetic exchange action and induce the room temperature ferromagnetism. Nitrogen-doped ZnCoO film was obtained in plasma-enhanced chemical vapor deposition system

where NH

plasma provided N source. After an ammine plasma treatment the room tempe-rature ferromagnetism was detected on ZnCoO sample. So some holes generated by N doping play an important role for the room temperature ferromagnetic properties in Co doped ZnO sample.In our experiments

although the sample still is n-type semiconductor

there are some holes in the crystal generated by plasma treatment. In this theory

a bound magnetic polarons (BMPs) could be formed after the introduction of p-type dopant N.

关键词

Keywords

references

Ditel T, Ohno H, Matsukura F, et al. Zener model description of ferromagnetism in zinc-blend magnetic semiconductors [J]. Science, 2000, 287 (5455):1019-1022.[2] Ye Zhigao, Zhu Liping, Peng Yingzi, et al. Fabrication and magnetic properties of Co-doped ZnO thin films by pulsed laser deposition [J]. Chin. J. Lumin. (发光学报), 2008, 29 (3):486-491 (in Chinese).[3] Peng Yingzi, Ye Zhigao, Ye Zhizhen, et al. Structural and magnetic properties of Co-doped ZnO thin films [J]. Chin. J. Lumin. (发光学报), 2008, 29 (3):479-486 (in Chinese).[4] Kittilstved K R, Norberg N S, Gamelin D R. Chemical manipulation of high-TC ferromagnetism in ZnO diluted magnetic semiconductors [J]. Phys. Rev. Lett., 2005, 94 (14):147209-1-5.[5] Sluiter M H F, Kawazoe Y, Sharma P, et al. First principles based design and experimental evidence for a ZnO-based ferromagnet at room temperature [J]. Phys. Rev. Lett., 2005, 94 (18):187204-1-5.[6] Pauling L. The Nature of the Chemical Bond [M]. Ithaca, New York: Cornell University, 1960, Chap. 3,55.[7] Masanobu F, Katsuaki Y, Osamu T. Optical properties of zinc oxynitride thin films [J]. Thin Solid Films, 1998, 317 (1-2):322-325.[8] Ma J G, Liu Y C, Mu R, et al. Method of control of nitrogen content in ZnO films: Structural and photoluminescence properties [J]. J. Vac. Sci. Technol. B, 2004, 22 (1):94-98.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Optical Properties and Ferromagnetism of Fe and Ni Co-doped ZnO Dilute Magnetic Semiconductors

First-principle Research on Ferromagnetism of (Co,Mn)-codoped ZnO

Related Author

WEI Zhi-qiang

ZHANG Ling-ling

WU Xiao-juan

WU Yong-fu

WANG Xuan

BI Yan-jun

GUO Zhi-you

LIN Zhu

Related Institution

School of Science, Lanzhou University of Technology

State Key Laboratory of Gansu Advanced Non-ferrous Metal Materials, Lanzhou University of Technology

Optoelectronic Material and Technology Institute, School for Information and Optoelectronic Science and Engineering, South China Normal University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰