Optimization of Two-step AlN Buffer of <em>a</em>-plane GaN Films Grown on <em>r</em>-plane Sapphire by MOCVD

您当前的位置：

首页 >

文章列表页 >

Optimization of Two-step AlN Buffer of a-plane GaN Films Grown on r-plane Sapphire by MOCVD

paper | 更新时间：2020-08-12

- Optimization of Two-step AlN Buffer of a-plane GaN Films Grown on r-plane Sapphire by MOCVD
- Chinese Journal of Luminescence Vol. 32, Issue 4, Pages: 363-367(2011)
- 作者机构：
  
  中国科学院物理研究所凝聚态国家重点实验室, 北京 100190
- 作者简介：
- 基金信息：
  
  863"
- DOI：10.3788/fgxb20113204.0363
  CLC： O472;O482.31
- Received：20 January 2011，
  
  Revised：07 February 2011，
  
  Published Online：22 April 2011，
  
  Published：22 April 2011
- 稿件说明：
移动端阅览
何涛, 陈耀, 李辉, 戴隆贵, 王小丽, 徐培强, 王文新, 陈弘. 利用MOCVD在<em>r</em>面蓝宝石上生长的 <em>a</em>面GaN中两步AlN缓冲层的优化[J]. 发光学报, 2011,32(4): 363-367

HE Tao, CHEN Yao, LI Hui, DAI Long-gui, WANG Xiao-li, XU Pei-qiang, WANG Wen-xin, CHEN Hong. Optimization of Two-step AlN Buffer of <em>a</em>-plane GaN Films Grown on <em>r</em>-plane Sapphire by MOCVD[J]. Chinese Journal of Luminescence, 2011,32(4): 363-367
何涛, 陈耀, 李辉, 戴隆贵, 王小丽, 徐培强, 王文新, 陈弘. 利用MOCVD在<em>r</em>面蓝宝石上生长的 <em>a</em>面GaN中两步AlN缓冲层的优化[J]. 发光学报, 2011,32(4): 363-367 DOI： 10.3788/fgxb20113204.0363.

HE Tao, CHEN Yao, LI Hui, DAI Long-gui, WANG Xiao-li, XU Pei-qiang, WANG Wen-xin, CHEN Hong. Optimization of Two-step AlN Buffer of <em>a</em>-plane GaN Films Grown on <em>r</em>-plane Sapphire by MOCVD[J]. Chinese Journal of Luminescence, 2011,32(4): 363-367 DOI： 10.3788/fgxb20113204.0363.

摘要

采用两步AlN缓冲层(一层低温AlN和一层高温AlN)在

r

面蓝宝石衬底上生长了非极性的

a

面GaN

并利用高分辨X射线衍射和光致荧光谱对所生长的材料进行了研究。两步AlN缓冲层在我们之前的工作中已被证明比单步高温AlN或低温GaN缓冲层更有利于减小材料各向异性和提高晶体质量

本文进一步优化了两步AlN缓冲层的结构

并得到了各向异性更小

晶体质量更好的

a

面GaN薄膜。分析表明

两步AlN缓冲层中的低温AlN层在减小各向异性中起着关键作用。低温AlN层能抑制了优势方向(

c

轴)的原子迁移

有利于劣势方向(

m

轴)的原子迁移

从而减小了Al原子在不同方向迁移能力的差异

并为其后的高温AlN缓冲层和GaN层提供"生长模板"

以得到各向异性更小、晶体质量更好的

a

面GaN材料。

Abstract

Nonpolar (112 0)

a

-plane GaN films with two-step AlN buffer(a low-temperature (LT) and a high-temperature (HT) AlN layers) were grown on (11 02)

r

-plane sapphire by metalorganic chemical vapor deposition (MOCVD). The as-grown films were investigated by high-resolution X-ray diffraction (XRD) and photoluminescence (PL). The two-step AlN buffer has been proved to be advantageous in crystal quality compared with one-step LT-GaN or HT-AlN buffers in our early works. In this report

the thickness of the two-step buffer was further optimized

and much less anisotropic

a

-plane GaN films were achieved. It was found that the LT-AlN layer of the two-step buffer played a key role in reduction of anisotropy of the GaN film grown.

关键词

Keywords

references

Nakamura S. The role of structural imperfections in InGaN-based blue light-emitting diodes and Laser diodes [J]. Science, 1998, 281 (5379):956-961.[2] Asif Khan M, Bhattarai A, Kuznia J N, et al. High electron mobility transistor based on a GaN-AlxGa1-xN heterojunction [J]. Appl. Phys. Lett., 1993, 63 (9):1214-1215.[3] Morkoc H, Strite S, Gao G B, et al. Large-band-gap SiC, Ⅲ-Ⅴ nitride, and Ⅱ-Ⅵ ZnSe-based semiconductor device technologies [J]. J. Appl. Phys., 1994, 76 (3):1363-1398.[4] Nakamura S, Senoh M, Mukai T. Highly p-typed Mg-doped GaN films grown with GaN buffer layers [J]. Jpn. J. Appl. Phys. Part 2, 1991, 30 (10A):L1708-L1711.[5] Wang Mingyue, Yuan Jinshe, Yu Guohao. Correlation of the yellow photoluminescence and excitation sources of GaN film grown by MOCVD [J]. Chin. J. Lumin. (发光学报), 2009, 30 (1):73-76 (in Chinese).[6] Wu Dianzhong, Wang Wenxin, Yang Chengliang, et al. InAs quantum dots with InGaAs Caplayer infrred detector grown by MBE [J]. Chin. J. Lumin. (发光学报), 2009, 30 (2):209-213 (in Chinese).[7] Yang Chenliang, Ye Huiqi, Wang Wenxin, et al. Effect of interface growth interruption on spin relaxation in GaAs(Ⅲ)-AlGaAs/GaAs quantum wells [J]. Chin. J. Lumin. (发光学报), 2009, 30 (2):214-218 (in Chinese).[8] Xing Bing, Cao Wenyu, Du Weimin. Temperature-dependent PL of InGaN/GaN multiple quantum wells with variable content of In [J]. Chin. J. Lumin. (发光学报), 2010, 31 (6):864-869 (in Chinese).[9] Im J S, Kollmer H, Off J, et al. Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells [J]. Phys. Rev. B, 1998, 57 (16):R9435-R9438.[10] Langer R, Simon J, Ortiz V, et al. Giant electric fields in unstrained GaN single quantum wells [J]. Appl. Phys. Lett., 1999, 74 (25):3827-3829.[11] Lefebvre P, Morel A, Gallart M, et al. High internal electric field in a graded-width InGaN/GaN quantum well: accurate determination by time-resolved photoluminescence spectroscopy [J]. Appl. Phys. Lett., 2001, 78 (9):1252-1254.[12] Bernardini F, Fiorentini V. Macroscopic polarization and band offsets at nitride heterojunctions [J]. Phys. Rev. B, 1998, 57 (16):R9427-R9430.[13] Li D S, Chen H, Yu H B, et al. Anisotropy of a-plane GaN grown on r-plane sapphire by metalorganic chemical vapor deposition [J]. J. Cryst. Growth, 2004, 265 (1-2):107-110.[14] Yan J F, Guo L W, Zhang J, et al. Characteristics of the improved a-plane GaN films grown on r-plane sapphire with two-step AlN buffer layer [J]. J. Cryst. Growth, 2007, 307 (1):35-39.[15] Wang H M, Chen C Q, Gong Z, et al. Anisotropic structural characteristics of (112 0) GaN templates and coalesced epitaxial lateral overgrown films deposited on (101 2 ) sapphire [J]. Appl. Phys. Lett., 2004, 84 (4):499-501.[16] Hiramatsu K, Nishiyama K, Motogaito A, et al. Recent progress in selective area growth and epitaxial lateral overgrowth of Ⅲ-nitrides:effects of reactor pressure in MOVPE growth [J]. Phys. Stat. Sol. (a), 1999, 176 (1):535-543.[17] Araki M, Mochimizo N, Hoshino K, et al. Direct growth of a-plane GaN on r-plane sapphire substrate by metalorganic vapor phase epitaxy [J]. Jpn. J. Appl. Phys., 2007, 46 (2):555-559.[18] Ni X, Fu Y, Moon Y T, et al. Optimization of (112 0) a-plane GaN growth by MOCVD on (11 02) r-plane sapphire [J]. J. Cryst. Growth, 2006, 290 (1):166-170.[19] Hollander, J H, Kappers M J, McAleese C, et al. Improvements in a-plane GaN crystal quality by a two-step growth process [J]. Appl. Phys. Lett., 2008, 92 (10):101104-1-3.[20] Craven M D, Lim S H, Wu F, et al. Structural characterization of nonpolar (112 0) a-plane GaN thin films grown on (11 02) r-plane sapphire [J]. Appl. Phys. Lett., 2002, 81 (3):469-471.[21] Paskov P P, Schifano R, Monemar B. Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition [J]. J. Appl. Phys., 2005, 98 (9):093519-1-7.[22] Liu R, Bell A, Ponce F A, et al. Luminescence from stacking faults in gallium nitride [J]. Appl. Phys. Lett., 2005, 86 (2):021908-1-3.[23] Netzela C, Wernickea T, Zeimera U, et al. Near band edge and defect emissions from epitaxial lateral overgrown a-plane GaN with different stripe orientations [J]. J. Cryst. Growth, 2008, 310 (1):8-12.

0

Views

64

下载量

7

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Related Articles

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

GaN Grown on Sputtered AlN/Mo/Sc_0.2Al_0.8N Composite Structure with Different Mo Thickness

Effect of SiO₂ Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance

Fabrication and Characterization of GaN-based White LED on 4-inch Patterned Sapphire Substrate

Related Author

CHEN Yao

WANG Wen-xin

LI Yan

JIANG Yang

XU Pei-qiang

MA Zi-guang

SONG Jing

CHEN Hong

Related Institution

Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Tianjing Zhonghuan Neolight Technology Company

Faculty of Information Technology， Key Laboratory of Opto-electronics Technology，Ministry of Education Beijing University of Technology

State Key Laboratory of High Power Semiconductor Lasers of Changchun University of Science and Technology

Suzhou Institute of Nano-Tech and Nano-Bionics， Chinese Academy of Sciences

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰