Preparation of Gallium Oxide Microcrystalline Thin Films and Its Solar Blind DUV Photodetector

Li LAI; Hui-lan MO; Si-jie FU; Yan-qi MAO; Jia-heng WANG; Si-qiang FAN

doi:10.37188/fgxb20204109.1165

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Preparation of Gallium Oxide Microcrystalline Thin Films and Its Solar Blind DUV Photodetector

Device Fabrication and Physics | 更新时间：2020-09-10

- Preparation of Gallium Oxide Microcrystalline Thin Films and Its Solar Blind DUV Photodetector
- Chinese Journal of Luminescence Vol. 41, Issue 9, Pages: 1165-1171(2020)
- 作者机构：
  
  重庆师范大学物理与电子工程学院光电功能材料重庆市重点实验室, 重庆 401331
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China;Scientific and Technological Research F
- DOI：10.37188/fgxb20204109.1165
  CLC： O482.31
- Received：26 May 2020，
  
  Accepted：18 June 2020，
  
  Published：2020-09
- 稿件说明：
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Li LAI, Hui-lan MO, Si-jie FU, et al. Preparation of Gallium Oxide Microcrystalline Thin Films and Its Solar Blind DUV Photodetector[J]. Chinese journal of luminescence, 2020, 41(9): 1165-1171.
DOI：

Li LAI, Hui-lan MO, Si-jie FU, et al. Preparation of Gallium Oxide Microcrystalline Thin Films and Its Solar Blind DUV Photodetector[J]. Chinese journal of luminescence, 2020, 41(9): 1165-1171. DOI： 10.37188/fgxb20204109.1165.

摘要

采用射频磁控溅射技术和热退火技术在石英衬底上制备了微晶态Ga

薄膜。利用X射线衍射仪（XRD）、拉曼光谱（Raman）、紫外-可见-红外分光光度计（UV-Vis-IR）以及X射线光电子能谱仪（XPS）等手段对薄膜结构、光学特性以及化学组分进行了系统研究。结果表明，制备的Ga

薄膜呈非晶态，退火处理后，薄膜由非晶态转变为含β相Ga

的微晶薄膜，随退火温度升高，薄膜内部微晶成分不断增加，但最终在石英衬底上制备的薄膜并未全部转换成全晶态薄膜（β-Ga

）。基于非晶和微晶Ga

薄膜制备了金属-半导体-金属（MSM）结构的日盲深紫外探测器，发现非晶Ga

薄膜基器件表现出更高的光响应，而微晶Ga

薄膜基器件则具有更低的暗电流和更快的响应速度。

Abstract

Microcrystalline Ga

thin films were prepared on quartz substrates by radio frequency magnetron sputtering technology and thermal annealing technology. Using X-ray diffractometer(XRD)

Raman spectroscopy

ultraviolet-visible-infrared spectrophotometer(UV-Vis-IR) and X-ray photoelectron spectrometer(XPS)

the structure

optical properties and the chemical components were systematically studied. The results show that the prepared Ga

film is amorphous. After the post-annealing process

all the films are changed from amorphous to microcrystalline films containing β-phase Ga

. With the rising of annealing temperature

the microcrystalline composition inside the film continues to increase. However

not all the thin films prepared on the quartz substrate were converted into fully crystalline thin films(β-Ga

). Based on amorphous and microcrystalline Ga

thin films

metal-semiconductor-metal(MSM) structured solar blind deep ultraviolet photodetectors were fabricated. It was found that amorphous Ga

thin film-based device shows higher optical response

while microcrystalline Ga

thin film-based device shows lower dark current and faster response speed.

关键词

Keywords

references

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