ZnO UV Photodetector Based on Sandwich Structure

Qiao-chu YANG; He-yang SUN; Fu-long ZHANG; Tian-shu WANG

doi:10.37188/fgxb20204109.1153

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ZnO UV Photodetector Based on Sandwich Structure

Device Fabrication and Physics | 更新时间：2020-09-10

- ZnO UV Photodetector Based on Sandwich Structure
- Chinese Journal of Luminescence Vol. 41, Issue 9, Pages: 1153-1157(2020)
- 作者机构：
  
  长春理工大学空间光电国家地方联合工程研究中心, 吉林长春 130022
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China
- DOI：10.37188/fgxb20204109.1153
  CLC： O472.8
- Received：03 July 2020，
  
  Accepted：20 July 2020，
  
  Published：2020-09
- 稿件说明：
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Qiao-chu YANG, He-yang SUN, Fu-long ZHANG, et al. ZnO UV Photodetector Based on Sandwich Structure[J]. Chinese journal of luminescence, 2020, 41(9): 1153-1157.
DOI：

Qiao-chu YANG, He-yang SUN, Fu-long ZHANG, et al. ZnO UV Photodetector Based on Sandwich Structure[J]. Chinese journal of luminescence, 2020, 41(9): 1153-1157. DOI： 10.37188/fgxb20204109.1153.

摘要

采用射频磁控溅射方法制备了三明治结构ZnO紫外光电探测器，即在传统金属-半导体-金属（MSM）单层ZnO紫外光电探测器的基础上再铺设一层ZnO薄膜，从而构建三明治器件结构。三明治结构ZnO紫外光电探测器响应度在5 V偏压下达到了0.05 A/W，暗电流为1.44×10

-5

A，器件的整体性相比较传统单层ZnO紫外光电探测器得到了明显的改善。这主要归因于金属与半导体接触的耗尽区可以直接吸收入射光，提高了入射光的吸收效率，避免了传统上层电极对入射光的遮蔽作用。

Abstract

ZnO UV photodetector is fabricated with the sandwich structure by radio frequency magnetron sputtering

based on the traditional metal semiconductor metal(MSM) single-layer ZnO UV photodetectors

another layer of ZnO film is laid to construct the sandwich device structure. At 5 V bias

the responsivity of the photodetector is 0.05 A/W

and the dark current is 1.44×10

-5

A. The integrity of the device is significantly improved compared with the traditional single-layer ZnO UV photodetector. This is mainly due to the fact that the depletion region of the metal semiconductor contact can directly absorb the incident light

improve the absorption efficiency of the incident light

and avoid the shielding effect of the traditional upper electrode to the incident light.

关键词

Keywords

references

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