Optimization of Graphene Quantum Dots as Doping Materials in Polymer Solar Cells

Qiang SUN; Si-da FAN; Jin-peng DONG; He-ping SU; Li-juan WANG; Zhan-guo LI; Yi QU

doi:10.37188/fgxb20204109.1137

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Optimization of Graphene Quantum Dots as Doping Materials in Polymer Solar Cells

Synthesis and Properties of Materials | 更新时间：2020-09-10

- Optimization of Graphene Quantum Dots as Doping Materials in Polymer Solar Cells
- Chinese Journal of Luminescence Vol. 41, Issue 9, Pages: 1137-1145(2020)
- 作者机构：
  
  1.长春工业大学化学工程学院, 吉林长春 130012
  2.长春理工大学光电工程学院, 吉林长春 130022
  3.海南师范大学物理电子工程学院, 海南海口 571158
- 作者简介：
- 基金信息：
  
  Hainan Provincial Natural Science Foundation of China;Undergraduate Training Program
- DOI：10.37188/fgxb20204109.1137
  CLC： O482.31
- Received：28 May 2020，
  
  Accepted：20 June 2020，
  
  Published：2020-09
- 稿件说明：
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Qiang SUN, Si-da FAN, Jin-peng DONG, et al. Optimization of Graphene Quantum Dots as Doping Materials in Polymer Solar Cells[J]. Chinese journal of luminescence, 2020, 41(9): 1137-1145.
DOI：

Qiang SUN, Si-da FAN, Jin-peng DONG, et al. Optimization of Graphene Quantum Dots as Doping Materials in Polymer Solar Cells[J]. Chinese journal of luminescence, 2020, 41(9): 1137-1145. DOI： 10.37188/fgxb20204109.1137.

摘要

采用溶剂热法，以氧化石墨烯为前驱体制备了石墨烯量子点（GQDs），将不同制备条件和质量分数的GQDs掺杂到聚3-己基噻吩和[6

6]-苯基-C61-丁酸甲酯（PCBM:P3HT）中作为敏感层制备了太阳能电池器件。实验结果表明，敏感层掺杂0.2%质量分数的GQDs时，太阳能电池光电转换效率较未掺杂器件提高了16.45%。敏感层掺杂反应时间4 h和温度220℃制备的GQDs，获得低粗糙度和高紫外可见光吸收强度的敏感层薄膜，制备的太阳能电池器件光电转换效率为1.34%，较未掺杂GQDs器件提高了12.60%。因此，GQDs适宜的制备条件和掺杂浓度可以提高太阳能电池器件的光电转换效率。

Abstract

Graphene oxide quantum dots(GQDs) were prepared by solvothermal method

using graphene oxide as a precursor. The solar cell devices were prepared by doping GQDs with different preparation conditions and mass fractions into poly 3-hexylthiophene and[6

6]-phenyl-C61-Methyl butyrate(PCBM:P3HT) as a sensitive layer. The experimental results show that when the sensitive layer is doped with GQDs of 0.2% mass fraction

the photoelectric conversion efficiency of solar cells is increased by 16.45% compared with that of undoped devices. When the sensitive layer is doped with GQDs prepared at a reaction time of 4 h and a temperature of 220℃

a sensitive layer film with low roughness and high ultraviolet visible light absorption strength is obtained. The photoelectric conversion efficiency of the prepared solar cells device was 1.34%

which was 12.60% higher than that of the undoped device. Therefore

suitable preparation conditions and doping concentration of GQDs can improve the photoelectric conversion efficiency of solar cell devices.

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references

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