Beam Shaping and Beam Combining System for Tunnel-junction Cascaded Multi-active-region Semiconductor Lasers
Device Fabrication and Physics|更新时间:2026-01-30
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Beam Shaping and Beam Combining System for Tunnel-junction Cascaded Multi-active-region Semiconductor Lasers
增强出版
“In the field of semiconductor lasers, experts have proposed a beam shaping method based on critical angle control, which effectively solves the problem of beam dispersion in multiple active regions, significantly improves beam quality and fiber coupling efficiency, and provides a new solution for optimizing laser performance.”
Chinese Journal of LuminescenceVol. 47, Issue 1, Pages: 133-143(2026)
作者机构:
1.中国科学院半导体研究所 固态光电信息技术实验室, 北京 100083
2.中国科学院大学 材料科学与光电技术学院, 北京 100049
作者简介:
基金信息:
Advanced Materials-National Science and Technology Major Project(2024ZD0605200);National Key R&D Program of China(2022YFB4601201;2022YFB3605205);International Partnership Program of Chinese Academy of Sciences for Grand Challenges(172111KYSB20210016);National Natural Science Foundation of China(U21B2061;62074142)
ZENG Yue,ZHONG Li,XUE Chunlai,et al.Beam Shaping and Beam Combining System for Tunnel-junction Cascaded Multi-active-region Semiconductor Lasers[J].Chinese Journal of Luminescence,2026,47(01):133-143.