Influence of AlxGa1-xAs Spacer Layer in Resonant Periodic Gain Active Region on Performance for 940 nm Vertical Cavity Surface-emitting Laser
Device Fabrication and Physics|更新时间:2025-12-15
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Influence of AlxGa1-xAs Spacer Layer in Resonant Periodic Gain Active Region on Performance for 940 nm Vertical Cavity Surface-emitting Laser
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“The PICS 3D simulation software was used to design the resonant period gain active region of AlxGa1 xAs interlayer with different Al compositions. The optoelectronic characteristics of a 940 nm vertical cavity surface emitting laser were studied, providing theoretical guidance and data support for the selection of interlayer materials in strain compensated quantum well RPG active regions.”
Chinese Journal of LuminescenceVol. 46, Issue 11, Pages: 2109-2118(2025)
Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(2022SX-TD018;2022SX-AT001;2021SX-AT001);National Natural Science Foundation of China(61904120;21972103);Natural Science Basic Research Plan in Shaanxi Province of China(2023-JC-QN-0552);Key R&D Projects in Shanxi Province(202302150101001);Shanxi “1331 project”
WU Bin,DONG Hailiang,JIA Zhigang,et al.Influence of AlxGa1-xAs Spacer Layer in Resonant Periodic Gain Active Region on Performance for 940 nm Vertical Cavity Surface-emitting Laser[J].Chinese Journal of Luminescence,2025,46(11):2109-2118.
WU Bin,DONG Hailiang,JIA Zhigang,et al.Influence of AlxGa1-xAs Spacer Layer in Resonant Periodic Gain Active Region on Performance for 940 nm Vertical Cavity Surface-emitting Laser[J].Chinese Journal of Luminescence,2025,46(11):2109-2118. DOI: 10.37188/CJL.20250151. CSTR: 32170.14.CJL.20250151.
Influence of AlxGa1-xAs Spacer Layer in Resonant Periodic Gain Active Region on Performance for 940 nm Vertical Cavity Surface-emitting Laser增强出版
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