您当前的位置:
首页 >
文章列表页 >
Influence of AlxGa1-xAs Spacer Layer in Resonant Periodic Gain Active Region on Performance for 940 nm Vertical Cavity Surface-emitting Laser
Device Fabrication and Physics | 更新时间:2025-12-15
    • Influence of AlxGa1-xAs Spacer Layer in Resonant Periodic Gain Active Region on Performance for 940 nm Vertical Cavity Surface-emitting Laser

      增强出版
    • The PICS 3D simulation software was used to design the resonant period gain active region of AlxGa1 xAs interlayer with different Al compositions. The optoelectronic characteristics of a 940 nm vertical cavity surface emitting laser were studied, providing theoretical guidance and data support for the selection of interlayer materials in strain compensated quantum well RPG active regions.
    • Chinese Journal of Luminescence   Vol. 46, Issue 11, Pages: 2109-2118(2025)
    • DOI:10.37188/CJL.20250151    

      CLC: TN248.4
    • CSTR:32170.14.CJL.20250151    
    • Received:14 May 2025

      Revised:2025-05-30

      Published:25 November 2025

    移动端阅览

  • WU Bin,DONG Hailiang,JIA Zhigang,et al.Influence of AlxGa1-xAs Spacer Layer in Resonant Periodic Gain Active Region on Performance for 940 nm Vertical Cavity Surface-emitting Laser[J].Chinese Journal of Luminescence,2025,46(11):2109-2118. DOI: 10.37188/CJL.20250151. CSTR: 32170.14.CJL.20250151.

  •  
  •  

0

Views

82

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Vortex Light Output Based on Integrated Silicon Nitride Metasurface VCSEL
Thermal Optimization of High-power Vertical Cavity Surface Emitting Laser Arrays
Failure Analysis of Multi-junction Cascade Vertical Cavity Surface Emitting Laser
Influence of Photo-electron Coupling on Optical Properties of InGaN/GaN Quantum Wells

Related Author

XU Bingshe
MA Shufang
SHANG Lin
WANG Yongli
JIANG Zengxuan
NIU Hao
SONG Guofeng
WEI Zhipeng

Related Institution

Xi'an Key Laboratory of Compound Semiconductor Materials and Devices, School of Physics & Information Science, Shaanxi University of Science and Technology
Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences
Zhongshan Institute of Changchun University of Science and Technology
State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
0