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Recent Progress in ZnO-based Memristive Devices
Invited Paper | 更新时间：2025-05-27

    • Recent Progress in ZnO-based Memristive Devices

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    • “The latest research progress shows that zinc oxide based resistive memory devices have broad application prospects in fields such as information storage and processing, and simulation of brain like synaptic functions. Experts have summarized the challenges faced by zinc oxide based resistive memory devices and looked forward to future development trends.”
    • Chinese Journal of Luminescence   Vol. 46, Issue 5, Pages: 753-769(2025)

    • DOI：10.37188/CJL.20240331    

      CLC： O472
    • CSTR：32170.14.CJL.20240331    

    • Received：17 December 2024，

      Revised：02 January 2025，

      Published：25 May 2025

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  • SHI Jiajuan,SHAN Xuanyu,WANG Zhongqiang,et al.Recent Progress in ZnO-based Memristive Devices[J].Chinese Journal of Luminescence,2025,46(05):753-769. DOI： 10.37188/CJL.20240331. CSTR： 32170.14.CJL.20240331.

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