浏览全部资源
扫码关注微信
厦门大学 厦门市未来显示技术研究院, 萨本栋微米纳米科学技术研究院, 物理科学与技术学院, 福建 厦门 361005
Received:07 December 2024,
Revised:28 December 2024,
Published:25 April 2025
移动端阅览
康闻宇,尹君,黄家新等.用于高效光提取的深紫外LED封装体设计与优化[J].发光学报,2025,46(04):553-564.
KANG Wenyu,YIN Jun,HUANG Jiaxin,et al.Design and Optimization of Highly Efficient Light Extraction Encapsulation for Deep Ultraviolet LEDs[J].Chinese Journal of Luminescence,2025,46(04):553-564.
康闻宇,尹君,黄家新等.用于高效光提取的深紫外LED封装体设计与优化[J].发光学报,2025,46(04):553-564. DOI: 10.37188/CJL.20240321. CSTR: 32170. 14. CJL. 20240321.
KANG Wenyu,YIN Jun,HUANG Jiaxin,et al.Design and Optimization of Highly Efficient Light Extraction Encapsulation for Deep Ultraviolet LEDs[J].Chinese Journal of Luminescence,2025,46(04):553-564. DOI: 10.37188/CJL.20240321. CSTR: 32170. 14. CJL. 20240321.
针对AlGaN基深紫外LED出光效率低的难题,设计了氟树脂紧密粘合的石英透镜封装结构,有效解决了倒装结构LED光子从蓝宝石衬底出射时较大内全反射损失的难题。研究表明,较薄的界面氟树脂结合层可形成相对匹配的折射率过渡,实现光子出射最大化,典型250 nm深紫外LED出光强度可提升28%。在此基础上,设计了具有反射侧壁的陶瓷封装基板,用以提高深紫外LED横磁(Transverse magnetic, TM)模式出射光的提取和汇聚。仿真结果表明,不同波长的深紫外LED均实现了显著的提升,相较于对照样品不足50%的前向出光效率,引入反射型封装基板后最高可提升至94%,且对于波长短于250 nm的LED提升更显著,这与其更高比例的TM模式发光有关。进一步优化的石英透镜曲率使得LED出射光汇聚特性获得了有效调控,可满足深紫外LED在表面灭活等不同应用场景的光场分布需求。
To face the challenge of low light extraction in AlGaN-based deep ultraviolet (DUV) LEDs, a quartz lens encapsulation structure bonded with fluorine resin was designed to effectively resolve the significant internal total reflection (ITR) losses when photons emitted from the sapphire substrate of the flip-chip LED. This work demonstrated that the thin interfacial fluorine resin bonding layer could form a matched refractive index transition layer, maximizing light extraction. For typical 250 nm DUV LEDs, 28% light output intensity could be enhanced. Additionally, a ceramic packaging substrate with reflective sidewalls was designed to improve the extraction and convergence of transverse magnetic (TM)-mode emission from the DUV LEDs. Simulation results indicated significant improvements across different wavelengths of DUV LEDs. Compared to the reference sample (<50% forward light output efficiency), the design of reflective packaging substrates could raise the efficiency to 94%. The efficiency enhancement was more significant for LEDs with ≤250 nm wavelengths, caused by the higher proportion of TM-mode emission. Further optimization of the quartz lens curvature was able to effectively manipulate the emission convergence characteristics for LEDs, which meet the light field distribution requirements for various applications such as surface disinfection.
SORO A B , SHOKRI S , NICOLAU-LAPEÑA I , et al . Current challenges in the application of the UV-LED technology for food decontamination [J]. Trends Food Sci. Technol. , 2023 , 131 : 264 - 276 . doi: 10.1016/j.tifs.2022.12.003 http://dx.doi.org/10.1016/j.tifs.2022.12.003
KANG W Y , ZHENG J , HUANG J X , et al . Deep-ultraviolet photonics for the disinfection of SARS-CoV-2 and its variants (Delta and Omicron) in the cryogenic environment [J]. Opto-Electron. Adv. , 2023 , 6 ( 9 ): 220201 . doi: 10.29026/oea.2023.220201 http://dx.doi.org/10.29026/oea.2023.220201
SADRAEIAN M , ZHANG L , AAVANI F , et al . Viral inactivation by light [J]. eLight , 2022 , 2 ( 1 ): 18 . doi: 10.1186/s43593-022-00029-9 http://dx.doi.org/10.1186/s43593-022-00029-9
LENG B R , ZHANG Y , TSAI D P , et al . Meta-device: advanced manufacturing [J]. Light Adv. Manuf. , 2024 , 5 ( 1 ): 117 - 132 . doi: 10.37188/lam.2024.005 http://dx.doi.org/10.37188/lam.2024.005
LI J C , GAO N , CAI D J , et al . Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes [J]. Light Sci. Appl. , 2021 , 10 : 129 . doi: 10.1038/s41377-021-00563-0 http://dx.doi.org/10.1038/s41377-021-00563-0
CHEN Y X , BEN J W , XU F J , et al . Review on the progress of AlGaN-based ultraviolet light-emitting diodes [J]. Fundam. Res. , 2021 , 1 ( 6 ): 717 - 734 . doi: 10.1016/j.fmre.2021.11.005 http://dx.doi.org/10.1016/j.fmre.2021.11.005
SHARMA V K , DEMIR H V . Bright future of deep-ultraviolet photonics: emerging UVC chip-scale light-source technology platforms, benchmarking, challenges, and outlook for UV disinfection [J]. ACS Photonics , 2022 , 9 ( 5 ): 1513 - 1521 . doi: 10.1021/acsphotonics.2c00041 http://dx.doi.org/10.1021/acsphotonics.2c00041
KNEISSL M , SEONG T Y , HAN J , et al . The emergence and prospects of deep-ultraviolet light-emitting diode technologies [J]. Nat. Photonics , 2019 , 13 ( 4 ): 233 - 244 . doi: 10.1038/s41566-019-0359-9 http://dx.doi.org/10.1038/s41566-019-0359-9
吴郁 , 蓝习瑜 , 张梓睿 , 等 . AlGaN基深紫外LED光源灭活柯萨奇病毒研究 [J]. 发光学报 , 2024 , 45 ( 8 ): 1391 - 1397 . doi: 10.37188/cjl.20240099 http://dx.doi.org/10.37188/cjl.20240099
WU Y , LAN X Y , ZHANG Z R , et al . AlGaN based deep ultraviolet led for inactivating coxsackie virus [J]. Chin. J. Lumin. , 2024 , 45 ( 8 ): 1391 - 1397 . (in Chinese) . doi: 10.37188/cjl.20240099 http://dx.doi.org/10.37188/cjl.20240099
KHAN A , BALAKRISHNAN K , KATONA T . Ultraviolet light-emitting diodes based on group three nitrides [J]. Nat. Photonics , 2008 , 2 ( 2 ): 77 - 84 . doi: 10.1038/nphoton.2007.293 http://dx.doi.org/10.1038/nphoton.2007.293
HIRAYAMA H , ENOMOTO Y , KINOSHITA A , et al . Optical properties of AlGaN quantum well structures [J]. MRS Internet J. Nitride Semicond. Res. , 2000 , 5 ( S1 ): 696 - 702 . doi: 10.1557/s1092578300004956 http://dx.doi.org/10.1557/s1092578300004956
HIRAYAMA H , YATABE T , NOGUCHI N , et al . 226-273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire [J]. Phys. Status Solidi C , 2008 , 5 ( 9 ): 2969 - 2971 . doi: 10.1002/pssc.200779303 http://dx.doi.org/10.1002/pssc.200779303
SHATALOV M , SUN W H , LUNEV A , et al . AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% [J]. Appl. Phys. Express , 2012 , 5 ( 8 ): 082101 . doi: 10.1143/apex.5.082101 http://dx.doi.org/10.1143/apex.5.082101
HIRAYAMA H , FUJIKAWA S , KAMATA N . Recent progress in AlGaN-based deep-UV LEDs [J]. Electron. Commun. Jpn. , 2015 , 98 ( 5 ): 1 - 8 . doi: 10.1002/ecj.11667 http://dx.doi.org/10.1002/ecj.11667
MICKEVIČIUS J , TAMULAITIS G , SHUR M , et al . Internal quantum efficiency in AlGaN with strong carrier localization [J]. Appl. Phys. Lett. , 2012 , 101 ( 21 ): 211902 . doi: 10.1063/1.4767657 http://dx.doi.org/10.1063/1.4767657
WANG J M , XIE N , XU F J , et al . Group-Ⅲ nitride heteroepitaxial films approaching bulk-class quality [J]. Nat. Mater. , 2023 , 22 ( 7 ): 853 - 859 . doi: 10.1038/s41563-023-01573-6 http://dx.doi.org/10.1038/s41563-023-01573-6
ZVANUT M E , SUNAY U R , DASHDORJ J , et al . Mg-hydrogen interaction in AlGaN alloys [C]. Proceedings of SPIE 8262, Gallium Nitride Materials and Devices Ⅶ , San Francisco , 2012 . doi: 10.1117/12.916073 http://dx.doi.org/10.1117/12.916073
SIMON J , PROTASENKO V , LIAN C X , et al . Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures [J]. Science , 2010 , 327 ( 5961 ): 60 - 64 . doi: 10.1126/science.1183226 http://dx.doi.org/10.1126/science.1183226
YAN J C , WANG J X , CONG P P , et al . Improved performance of UV-LED by p-AlGaN with graded composition [J]. Phys. Status Solidi C , 2011 , 8 ( 2 ): 461 - 463 . doi: 10.1002/pssc.201000458 http://dx.doi.org/10.1002/pssc.201000458
HU X , KONG L J , YANG P , et al . Enhanced performance of AlGaN-based deep-UV LED by incorporating carrier injection balanced modulation layer synergistically with polarization-regulating structures [J]. J. Phys. D: Appl. Phys. , 2023 , 57 ( 7 ): 075101 . doi: 10.1088/1361-6463/ad0ac1 http://dx.doi.org/10.1088/1361-6463/ad0ac1
JIANG K , SUN X J , SHI Z M , et al . Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides [J]. Light Sci. Appl. , 2021 , 10 ( 1 ): 69 . doi: 10.1038/s41377-021-00503-y http://dx.doi.org/10.1038/s41377-021-00503-y
WANG J , CAI W T , LU W F , et al . Observation of 2D-magnesium-intercalated gallium nitride superlattices [J]. Nature , 2024 , 631 ( 8019 ): 67 - 72 . doi: 10.1038/s41586-024-07513-x http://dx.doi.org/10.1038/s41586-024-07513-x
GUTTMANN M , MEHNKE F , BELDE B , et al . Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm [J]. Jpn. J. Appl. Phys. , 2019 , 58 ( SC ): SCCB20 . doi: 10.7567/1347-4065/ab0d09 http://dx.doi.org/10.7567/1347-4065/ab0d09
LI X H , KAO T T , SATTER M , et al . Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate [J]. Appl. Phys. Lett. , 2015 , 106 ( 4 ): 041115 . doi: 10.1063/1.4906590 http://dx.doi.org/10.1063/1.4906590
PERNOT C , KIM M , FUKAHORI S , et al . Improved efficiency of 255-280 nm AlGaN-based light-emitting diodes [J]. Appl. Phys. Express , 2010 , 3 ( 6 ): 061004 . doi: 10.1143/apex.3.061004 http://dx.doi.org/10.1143/apex.3.061004
WANG S , DAI J N , HU J H , et al . Ultrahigh degree of optical polarization above 80% in AlGaN-based deep-ultraviolet LED with moth-eye microstructure [J]. ACS Photonics , 2018 , 5 ( 9 ): 3534 - 3540 . doi: 10.1021/acsphotonics.8b00899 http://dx.doi.org/10.1021/acsphotonics.8b00899
WEI L J , TANIGUCHI M , HAO G D , et al . Far-field pattern control and light-extraction enhancement of deep-ultraviolet light-emitting diodes with large-area Fresnel zone plate nano-structures [J]. J. Phys. D: Appl. Phys. , 2024 , 57 ( 4 ): 045104 . doi: 10.1088/1361-6463/ad056a http://dx.doi.org/10.1088/1361-6463/ad056a
MAEDA N , YUN J , JO M , et al . Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes [J]. Jpn. J. Appl. Phys. , 2018 , 57 ( 4S ): 04 FH08. doi: 10.7567/jjap.57.04fh08 http://dx.doi.org/10.7567/jjap.57.04fh08
INAZU T , FUKAHORI S , PERNOT C , et al . Improvement of light extraction efficiency for AlGaN-based deep ultraviolet light-emitting diodes [J]. Jpn. J. Appl. Phys. , 2011 , 50 ( 12R ): 122101 . doi: 10.7567/jjap.50.122101 http://dx.doi.org/10.7567/jjap.50.122101
彭洋 , 陈明祥 , 罗小兵 . 深紫外LED封装技术现状与展望 [J]. 发光学报 , 2021 , 42 ( 4 ): 542 - 559 . doi: 10.37188/CJL.20200394 http://dx.doi.org/10.37188/CJL.20200394
PENG Y , CHEN M X , LUO X B . Status and perspectives of deep ultraviolet LED packaging technology [J]. Chin. J. Lumin. , 2021 , 42 ( 4 ): 542 - 559 . (in Chinese) . doi: 10.37188/CJL.20200394 http://dx.doi.org/10.37188/CJL.20200394
PENG Y , WANG S M , CHENG H , et al . Light efficiency enhancement of deep ultraviolet light-emitting diodes packaged by nanostructured silica glass [J]. J. Display Technol. , 2016 , 12 ( 10 ): 1106 - 1111 . doi: 10.1109/jdt.2016.2564986 http://dx.doi.org/10.1109/jdt.2016.2564986
PENG Y , GUO X , LIANG R L , et al . Fabrication of microlens arrays with controlled curvature by micromolding water condensing based porous films for deep ultraviolet LEDs [J]. ACS Photonics , 2017 , 4 ( 10 ): 2479 - 2485 . doi: 10.1021/acsphotonics.7b00692 http://dx.doi.org/10.1021/acsphotonics.7b00692
LIANG R L , DAI J N , XU L L , et al . High light extraction efficiency of deep ultraviolet LEDs enhanced using nanolens arrays [J]. IEEE Trans. Electron Devices , 2018 , 65 ( 6 ): 2498 - 2503 . doi: 10.1109/ted.2018.2823742 http://dx.doi.org/10.1109/ted.2018.2823742
HUANG J X , WANG Q N , YE X F , et al . Light-field optimization of deep-ultraviolet LED modules for efficient microbial inactivation [J]. Coatings , 2024 , 14 ( 5 ): 568 . doi: 10.3390/coatings14050568 http://dx.doi.org/10.3390/coatings14050568
YAMADA K , FURUSAWA Y , NAGAI S , et al . Development of underfilling and encapsulation for deep-ultraviolet LEDs [J]. Appl. Phys. Express , 2015 , 8 ( 1 ): 012101 . doi: 10.7567/apex.8.012101 http://dx.doi.org/10.7567/apex.8.012101
YAMADA K , NAGASAWA Y , NAGAI S , et al . Study on the main-chain structure of amorphous fluorine resins for encapsulating AlGaN-based DUV-LEDs [J]. Phys. Status Solidi A , 2018 , 215 ( 10 ): 1700525 . doi: 10.1002/pssa.201700525 http://dx.doi.org/10.1002/pssa.201700525
KRAMES M R , SHCHEKIN O B , MUELLER-MACH R , et al . Status and future of high-power light-emitting diodes for solid-state lighting [J]. J. Display Technol. , 2007 , 3 ( 2 ): 160 - 175 . doi: 10.1109/jdt.2007.895339 http://dx.doi.org/10.1109/jdt.2007.895339
WU S J . Enhanced Light Extraction and Beam Shaping for AlGaN - Based Ultraviolet Light Emitting Diodes via Encapsulation [D]. Berlin : Technische Universität Berlin , 2023 .
REICH C , GUTTMANN M , FENEBERG M , et al . Strongly transverse-electric-polarized emission from deep ultraviol et AlGaN quantum well light emitting diodes [J]. Appl. Phys. Lett. , 2015 , 107 ( 14 ): 142101 . doi: 10.1063/1.4932651 http://dx.doi.org/10.1063/1.4932651
康闻宇(1990 -) , 男 , 福建厦门人 , 博士 , 副研究员 , 2020年于The University of Adelaide获得博士学位 , 主要从事宽禁带半导体材料与装备及交叉学科应用的研究 。. doi: 10.1063/1.4932651 http://dx.doi.org/10.1063/1.4932651
0
Views
166
下载量
0
CSCD
Publicity Resources
Related Articles
Related Author
Related Institution