p-type MgZnOS Transparent Conductive Films and p-n Junction Type Self-driven Ultraviolet Photodetectors
Cover Story|更新时间:2025-03-24
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p-type MgZnOS Transparent Conductive Films and p-n Junction Type Self-driven Ultraviolet Photodetectors
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“The latest research has overcome the difficulty of p-type doping in pure ZnO semiconductors and successfully prepared N-doped p-type transparent conductive MgZnOS thin films, providing new ideas for the development of all ZnO based optoelectronic devices.”
Chinese Journal of LuminescenceVol. 46, Issue 3, Pages: 373-382(2025)
作者机构:
1.湖北大学 材料科学与工程学院, 湖北 武汉 430062
2.湖北民族大学 智能科学与工程学院, 湖北 恩施 445000
作者简介:
基金信息:
National Natural Science Foundation of China(62274057;11975093;52202132);Hubei International Science and Technology Cooperation Project(2022EHB023);Natural Science Foundation of Hubei(2022CFB758)
GUO Ziman,WANG Yang,LIU Yang,et al.p-type MgZnOS Transparent Conductive Films and p-n Junction Type Self-driven Ultraviolet Photodetectors[J].Chinese Journal of Luminescence,2025,46(03):373-382.