p-Type MgZnOS Transparent Conductive Films and p-n Junction Type Self-Driven Ultraviolet Photodetectors
|更新时间:2024-12-26
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p-Type MgZnOS Transparent Conductive Films and p-n Junction Type Self-Driven Ultraviolet Photodetectors
增强出版
“The latest research has overcome the difficulty of p-type doping in pure ZnO semiconductors and successfully prepared high-performance all ZnO based optoelectronic devices.”
Chinese Journal of LuminescencePages: 1-10(2024)
作者机构:
1.湖北大学 材料科学与工程学院,湖北 武汉 430062
2.湖北民族大学 智能科学与工程学院,湖北 恩施 445000
作者简介:
基金信息:
National Natural Science Foundation of China(62274057;11975093;52202132);Hubei International Science and Technology Cooperation Project(2022EHB023);Natural Science Foundation of Hubei(2022CFB758)
GUO ZIMAN, WANG YANG, LIU YANG, et al. p-Type MgZnOS Transparent Conductive Films and p-n Junction Type Self-Driven Ultraviolet Photodetectors. [J/OL]. Chinese journal of luminescence, 2024, 1-10.
DOI:
GUO ZIMAN, WANG YANG, LIU YANG, et al. p-Type MgZnOS Transparent Conductive Films and p-n Junction Type Self-Driven Ultraviolet Photodetectors. [J/OL]. Chinese journal of luminescence, 2024, 1-10. DOI: 10.37188/CJL.20240292. CSTR: 32170.14.CJL.20240292.
p-Type MgZnOS Transparent Conductive Films and p-n Junction Type Self-Driven Ultraviolet Photodetectors增强出版