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Influence of 2 nm GaAs Insertion Layer on 905 nm InGaAs Multi Quantum Well Luminescence
Synthesis and Properties of Materials | 更新时间：2025-08-03

    • Influence of 2 nm GaAs Insertion Layer on 905 nm InGaAs Multi Quantum Well Luminescence

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    • “The latest research reveals the significant impact of GaAs insertion layer on the luminescence performance of InGaAs multi quantum well materials in the 905 nm wavelength band, providing new ideas for improving material performance.”
    • Chinese Journal of Luminescence   Vol. 45, Issue 12, Pages: 2011-2020(2024)

    • DOI：10.37188/CJL.20240243    

      CLC： O482.31

    • Received：30 September 2024，

      Revised：17 October 2024，

      Published：25 December 2024

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  • GAN Lulu,WANG Haizhu,ZHANG Chong,et al.Influence of 2 nm GaAs Insertion Layer on 905 nm InGaAs Multi Quantum Well Luminescence[J].Chinese Journal of Luminescence,2024,45(12):2011-2020. DOI： 10.37188/CJL.20240243.

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MA Xiaohui
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Related Institution

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