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Analysis of Failure Mechanism of Reverse Leakage Current in GaN-based Micro-LEDs
Device Fabrication and Physics | 更新时间：2024-09-26

    • Analysis of Failure Mechanism of Reverse Leakage Current in GaN-based Micro-LEDs

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    • “In the research of GaN based blue light Micro LED chips, experts have revealed the influence of temperature and voltage stress on reverse leakage current, providing new insights for improving chip performance.”
    • Chinese Journal of Luminescence   Vol. 45, Issue 9, Pages: 1539-1546(2024)

    • DOI：10.37188/CJL.20240164    

      CLC： TN312+.8

    • Received：02 July 2024，

      Revised：2024-07-17，

      Published：25 September 2024

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  • WANG Wei,ZHANG Tengfei,WANG Shouyu.Analysis of Failure Mechanism of Reverse Leakage Current in GaN-based Micro-LEDs[J].Chinese Journal of Luminescence,2024,45(09):1539-1546. DOI： 10.37188/CJL.20240164.

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WangShouYu
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