Design and Performance of Quantum Dot Light-emitting Diode Based on TiO<sub>2</sub> Modified Layer

Wei-wei LIU; You-chao KONG; Xiao-bo CHEN; Xiao-yan HU; Zhong-zheng MIAO

doi:10.37188/CJL.20220002

您当前的位置：

首页 >

文章列表页 >

Design and Performance of Quantum Dot Light-emitting Diode Based on TiO₂ Modified Layer

Device Fabrication and Physics | 更新时间：2022-04-07

- Design and Performance of Quantum Dot Light-emitting Diode Based on TiO₂ Modified Layer
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 3, Pages: 381-387(2022)
- 作者机构：
  
  盐城师范学院　物理与电子工程学院，江苏　盐城　224007
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61504118);Natural Science Foundation of Jiangsu Province(BK20201064);University Science Research Project of Jiangsu Province(19KJB430040)
- DOI：10.37188/CJL.20220002
  CLC： TN312.8
- Received：04 January 2022，
  
  Revised：2022-01-17，
  
  Published：2022-03
- 稿件说明：
移动端阅览
Wei-wei LIU, You-chao KONG, Xiao-bo CHEN, et al. Design and Performance of Quantum Dot Light-emitting Diode Based on TiO₂ Modified Layer[J]. Chinese Journal of Luminescence, 2022, 43(3): 381-387.
DOI：

Wei-wei LIU, You-chao KONG, Xiao-bo CHEN, et al. Design and Performance of Quantum Dot Light-emitting Diode Based on TiO₂ Modified Layer[J]. Chinese Journal of Luminescence, 2022, 43(3): 381-387. DOI： 10.37188/CJL.20220002.

摘要

量子点发光二极管(QLEDs)具有色饱和度和色纯度高等优点，在照明与显示领域具有广泛应用前景，成为发光领域研究的热点之一。由于器件采用多层结构，表面和界面问题成为制约QLEDs发展的一个棘手问题。本文使用原子层沉积技术在氧化锌(ZnO)电子传输层和量子点(QDs)发光层之间插入不同厚度的二氧化钛(TiO

)薄层，对ZnO和QDs发光层之间的界面进行修饰。发现插入0.270 nm的TiO

后，器件的漏电流降低约一个量级，激子的平均寿命从15.94 ns增加到16.61 ns，说明插入TiO

修饰层可以有效降低QDs发光层中激子猝灭，从而提高器件在低驱动电压下的电流效率(约提高15%)。上述结果有望为QLEDs在照明和显示领域的产业化提供参考。

Abstract

Due to high color saturation and high color purity

quantum dot(QD) light-emitting diodes(QLEDs) have become one of the hotspots in LEDs research for their potential application in lighting and display. Surface and interface issues have become a thorny issue which restricting the development of QLEDs with multilayer structure. In this paper

the interface between electron transport layer zinc oxide(ZnO) and QDs emitting layer was modified by inserting titanium dioxide(TiO

) layers with different thickness based on atomic layer deposition(ALD) technology. After inserting 0.270 nm TiO

modified layer

the leakage current of the QLEDs was significantly reduced about an order of magnitude

and the average lifetime of the excitons increased from 15.94 ns to 16.61 ns

indicating that the insertion of the TiO

modified layer can effectively prevent the exciton quenching in QDs emitting layer

thereby enhancing the current efficiency of the QLEDs under low driving voltage(about increased 15%). The above results are expected to provide a reference for the industrialization of QLEDs in the field of lighting and display.

关键词

Keywords

references

MOON H , LEE C , LEE W , et al . Stability of quantum dots,quantum dot films,and quantum dot light-emitting diodes for display applications [J]. Adv. Mater. , 2019 , 31 ( 34 ): 1804294-1-14 .

HUANG Y G , HSIANG E L , DENG M Y , et al . Mini-LED,Micro-LED and OLED displays:present status and future perspectives [J]. Light : Sci. Appl. , 2020 , 9 : 105-1-16 .

SUN Y Z , JIANG Y B , SUN X W , et al . Beyond OLED:efficient quantum dot light-emitting diodes for display and lighting application [J]. Chem. Rec. , 2019 , 19 ( 8 ): 1729 - 1752 .

赵越 , 高旭鹏 , 路坡 , 等 . 量子点白光LEDs及其在智慧照明中的应用 [J]. 液晶与显示 , 2021 , 36 ( 1 ): 187 - 202 .

ZHAO Y , GAO X P , LU P , et al . Quantum dot-based white LEDs and their applications of SMART lighting [J]. Chin. J. Liq. Cryst. Disp. , 2021 , 36 ( 1 ): 187 - 202 . (in Chinese)

SONG J J , WANG O Y , SHEN H B , et al . Over 30% external quantum efficiency light-emitting diodes by engineering quantum dot-assisted energy level match for hole transport layer [J]. Adv. Funct. Mater. , 2019 , 29 ( 33 ): 1808377-1-9 .

FU Y , JIANG W , KIM D , et al . Highly efficient and fully solution-processed inverted light-emitting diodes with charge control interlayers [J]. ACS Appl. Mater. Interfaces , 2018 , 10 ( 20 ): 17295 - 17300 .

ZHANG H , SU Q , SUN Y Z , et al . Efficient and color stable white quantum-dot light-emitting diodes with external quantum efficiency over 23% [J]. Adv. Opt. Mater. , 2018 , 6 ( 16 ): 1800354-1-8 .

DONG J Y , NG K W , SONG Y M , et al . Observation and suppression of stacking interface states in sandwich-structured quantum dot light-emitting diodes [J]. ACS Appl. Mater. Interfaces , 2021 , 13 ( 47 ): 56630 - 56637 .

ZHANG H , SU Q , CHEN S M . Suppressing Förster resonance energy transfer in close-packed quantum-dot thin film:toward efficient quantum-dot light-emitting diodes with external quantum efficiency over 21.6% [J]. Adv. Opt. Mater. , 2020 , 8 ( 10 ): 1902092-1-7 .

TIAN F Q , ZHU Y B , XU Z W , et al . Achieving highly efficient and stable quantum dot light-emitting diodes with interface modification [J]. IEEE Electron Device Lett. , 2020 , 41 ( 9 ): 1384 - 1387 .

XUE X L , DONG J Y , WANG S P , et al . Degradation of quantum dot light emitting diodes,the case under a low driving level [J]. J. Mater. Chem. C , 2020 , 8 ( 6 ): 2014 - 2018 .

KIRKWOOD N , SINGH B , MULVANEY P . Enhancing quantum dot led efficiency by tuning electron mobility in the ZnO electron transport layer [J]. Adv. Mater. Interfaces , 2016 , 3 ( 22 ): 1600868-1-7 .

YU J H , HEO S B , SHIN J S , et al . Improvement of the electron transport behavior in quantum-dot light-emitting diodes using a low-temperature processable ZnO [J]. Curr. Appl. Phys. , 2020 , 20 ( 2 ): 366 - 370 .

ZAIATS G , IKEDA S , KAMAT P V . Optimization of the electron transport layer in quantum dot light-emitting devices [J]. NPG Asia Mater. , 2020 , 12 ( 1 ): 57-1-6 .

马航 , 李邓化 , 陈雯柏 , 等 . 氧化锌作为电子传输层的量子点发光二极管 [J]. 发光学报 , 2017 , 38 ( 4 ): 507 - 513 .

MA H , LI D H , CHEN W B , et al . Quantum dot light emitting diodes with ZnO electron transport layer [J]. Chin. J. Lumin. , 2017 , 38 ( 4 ): 507 - 513 . (in Chinese)

DAI X L , ZHANG Z X , JIN Y Z , et al . Solution-processed,high-performance light-emitting diodes based on quantum dots [J]. Nature , 2014 , 515 ( 7525 ): 96 - 99 .

IVELAND J , MARTINELLI L , PERETTI J , et al . Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection:identification of the dominant mechanism for efficiency droop [J]. Phys. Rev. Lett. , 2013 , 110 ( 17 ): 177406-1-5 .

BOZYIGIT D , YAREMA O , WOOD V . Origins of low quantum efficiencies in quantum dot LEDs [J]. Adv. Funct. Mater. , 2013 , 23 ( 24 ): 3024 - 3029 .

SUN Y Z , WANG W G , ZHANG H , et al . High-performance quantum dot light-emitting diodes based on Al-doped ZnO nanoparticles electron transport layer [J]. ACS Appl. Mater. Interfaces , 2018 , 10 ( 22 ): 18902 - 18909 .

ZHANG N , QU X W , LYU Q , et al . Highly efficient transparent quantum-dot light-emitting diodes based on inorganic double electron-transport layers [J]. Photonics Res. , 2021 , 9 ( 10 ): 1979 - 1983 .

ZHANG M R , GUO F , ZHOU Q Z , et al . Enhanced performance through trap states passivation in quantum dot light emitting diode [J]. J. Lumin. , 2021 , 234 : 117946 .

YE Y L , YANG Z X , ZHAO Z W , et al . Efficient multi-shell CuInS 2 /ZnS/ZnS quantum-dots based light-emitting diodes:time-controlled synthesis of quantum-dots and carrier balance effects of PEI [J]. Opt. Mater. , 2020 , 106 : 109926-1-10 .

KWAK J , BAE W K , LEE D , et al . Bright and efficient full-color colloidal quantum dot light-emitting diodes using an inverted device structure [J]. Nano Lett. , 2012 , 12 ( 5 ): 2362 - 2366 .

CARUGE J M , HALPERT J E , WOOD V , et al . Colloidal quantum-dot light-emitting diodes with metal-oxide charge transport layers [J]. Nat. Photonics , 2008 , 2 ( 4 ): 247 - 250 .

CAO W R , XIANG C Y , YANG Y X , et al . Highly stable QLEDs with improved hole injection via quantum dot structure tailoring [J]. Nat. Commun. , 2018 , 9 ( 1 ): 2608-1-6 .

SHEN H B , CAO W R , SHEWMON N T , et al . High-efficiency,low turn-on voltage blue-violet quantum-dot-based light-emitting diodes [J]. Nano Lett. , 2015 , 15 ( 2 ): 1211 - 1216 .

JI W Y , LIU S H , ZHANG H , et al . Ultrasonic spray processed,highly efficient all-inorganic quantum-dot light-emitting diodes [J]. ACS Photonics , 2017 , 4 ( 5 ): 1271 - 1278 .

MARUS M , XIA Y , ZHONG H , et al . Bright infrared quantum dot light-emitting diodes through efficient suppressing of electrons [J]. Appl. Phys. Lett. , 2020 , 116 ( 19 ): 191103-1-6 .

GUZIEWICZ E , GODLEWSKI M , KRAJEWSKI T A , et al . ZnO by ALD-advantages of the material grown at low temperature [J]. Acta Phys. Pol. A , 2009 , 116 ( 5 ): 814 - 817 .

KIM M , LEE N , YANG J H , et al . High-efficiency quantum dot light-emitting diodes based on Li-doped TiO 2 nanoparticles as an alternative electron transport layer [J]. Nanoscale , 2021 , 13 ( 5 ): 2838 - 2842 .

TAN W L , BOWRING A R , BABADI A S , et al . Interfacing low-temperature atomic layer deposited TiO 2 electron transport layers with metal electrodes [J]. Adv. Mater. Interfaces , 2020 , 7 ( 8 ): 1902054-1-6 .

BANG S Y , FAN X B , JUNG S M , et al . Highly stable and scalable blue QD-LED via an evaporated TiO 2 thin film as an electron transport layer [J]. Adv. Opt. Mater. , 2020 , 8 ( 21 ): 2001172-1-8 .

WEI S , MIAO J H , SHI Q W , et al . Stable and efficient QLEDs with crystallographic TiO 2 as the electron transportation layer and improved carrier transportation by chlorination [J]. J. Mater. Sci. : Mater. Electron. , 2021 , 32 ( 8 ): 9795 - 9803 .

XU W , JI W Y , JING P T , et al . Efficient inverted quantum-dot light-emitting devices with TiO 2 /ZnO bilayer as the electron contact layer [J]. Opt. Lett. , 2014 , 39 ( 3 ): 426 - 429 .

Views

499

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Quantum Dots Patterning Technologies for Micro-LED Full-color Displays

Highly Sensitive Broad Organic Photodetector Based on Alumina Interface Modification Layer

Electric Field-driven Near-infrared Light-emitting Diodes from Excitons in Few-layer Black Phosphorus

Research Progress of Blue Light-emitting Diodes Based on Quasi-two-dimensional Perovskite Light-emitting Layer Optimization

Related Author

Wei-wei LIU

You-chao KONG

Xiao-bo CHEN

Xiao-yan HU

Zhong-zheng MIAO

LI Jiayuan

LIU Yifei

GU Yuxuan

Related Institution

Department of Physics and Electronic Engineering， Yancheng Teachers University

School of Electronic Science and Engineering， Xiamen University

Shanxi Key Lab of Photovoltaic Technology and Application， Key Lab of New Sensors and Intelligent Control of Ministry of Education， College of Physics and Optoelectronics， Taiyuan University of Technology

School of Materials Science and Engineering， Shanghai University

Suzhou Institute of Nano-Tech and Nano-Bionics （SINANO）， Chinese Academy of Sciences， Suzhou

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰

Design and Performance of Quantum Dot Light-emitting Diode Based on TiO2 Modified Layer

DOI：10.37188/CJL.20220002

摘要

Abstract

关键词

Keywords

references

Design and Performance of Quantum Dot Light-emitting Diode Based on TiO₂ Modified Layer