Failure Analysis of Multi-junction Cascade Vertical Cavity Surface Emitting Laser

Chang LIU; Yao XIAO; Heng LIU; Guo-liang DENG; Pei MIAO; Jun WANG

doi:10.37188/CJL.20210396

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Failure Analysis of Multi-junction Cascade Vertical Cavity Surface Emitting Laser

Device Fabrication and Physics | 更新时间：2022-04-07

- Failure Analysis of Multi-junction Cascade Vertical Cavity Surface Emitting Laser
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 3, Pages: 388-395(2022)
- 作者机构：
  
  1.四川大学　电子信息学院，四川　成都　610041
  2.苏州长光华芯光电技术股份有限公司，江苏　苏州　215163
- 作者简介：
- 基金信息：
- DOI：10.37188/CJL.20210396
  CLC： TN248.4
- Received：16 December 2021，
  
  Revised：2022-01-12，
  
  Published：2022-03
- 稿件说明：
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Chang LIU, Yao XIAO, Heng LIU, et al. Failure Analysis of Multi-junction Cascade Vertical Cavity Surface Emitting Laser[J]. Chinese Journal of Luminescence, 2022, 43(3): 388-395.
DOI：

Chang LIU, Yao XIAO, Heng LIU, et al. Failure Analysis of Multi-junction Cascade Vertical Cavity Surface Emitting Laser[J]. Chinese Journal of Luminescence, 2022, 43(3): 388-395. DOI： 10.37188/CJL.20210396.

摘要

对自主研发的940 nm大功率三结垂直腔面发射激光器(VCSEL)单点器件的高温高电流老化失效后的器件进行了失效分析研究。首先，通过热阻测试确定了加速老化实验的结温，并计算了老化加速因子为104。随后，对老化过程中产生的失效器件进行失效分析。通过老化前后器件

L-I-V

、正反向

V-I

、光学及红外外观、近场光斑及透射电子显微镜(TEM)研究了器件老化前后性能及发光模式变化，确定了器件的失效位置，分析了失效原因，并通过TEM图像确认了器件失效是由P-DBR中的位错生长导致。本文为国际首次对多结VCSEL器件失效分析的研究报道，对继续优化VCSEL内部结构设计及提升工艺控制能力、提高多结VCSEL器件寿命及可靠性具有一定指导意义。

Abstract

In this paper

the failure analysis of the self-developed 940 nm high-power triple junction vertical cavity surface emitting laser(VCSEL) single-emitter device after high temperature and high current aging failure is carried out. First

through the thermal resistance test

the junction temperature of the accelerated aging experiment was determined

and the aging acceleration factor was calculated to be 104. Subsequently

failure analysis was performed on the failed devices produced during the aging process. Through the

L-I-V

forward and reverse

V-I

optical and infrared appearance of the device before and after aging

near-field spot and transmission electron microscope(TEM)

the performance and light-emitting mode changes of the device before and after aging were studied

and the failure location of the failed device was determined and the cause of the failure was analyzed. The device was confirmed by TEM image. The failure is caused by the growth of dislocations in P-DBR. This article is the first report on the failure analysis of multi-junction VCSEL devices in the world. It has certain guiding significance for continuing to optimize the internal structure design of VCSEL and improving process control capabilities

and to improve the life and reliability of multi-junction VCSEL devices.

关键词

Keywords

references

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