Temperature-dependent Photoluminescence Properties of Cs0.05FA0.79MA0.16PbI2.52Br0.48 Perovskite Thin Film

Qiong ZHANG; Yue-jia WU; Yan-qin FENG; Li-wei SUN; Jun DAI

doi:10.37188/CJL.20210195

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Temperature-dependent Photoluminescence Properties of Cs_0.05FA_0.79MA_0.16PbI_2.52Br_0.48 Perovskite Thin Film

Synthesis and Properties of Materials | 更新时间：2021-09-13

- Temperature-dependent Photoluminescence Properties of Cs_0.05FA_0.79MA_0.16PbI_2.52Br_0.48 Perovskite Thin Film
  增强出版
- 发光学报 Vol. 42, Issue 9, Pages: 1396-1402(2021)
- 作者机构：
  
  江苏科技大学理学院, 江苏镇江 212100
- 作者简介：
  
  [ "张琼(1998-)，女，云南宣威人，硕士研究生，2021年于江苏科技大学获得学士学位，主要从事半导体发光材料及钙钛矿太阳能电池的研究。 E-mail: 18362885213@163.com" ]
  [ "戴俊(1981-)，男，江苏扬州人，博士，教授，博士研究生导师，2012年于东南大学获得博士学位，主要从事半导体发光材料及器件的研究。 E-mail: daijun@just.edu.cn" ]
- 基金信息：
  
  国家自然科学基金(11874185)
- DOI：10.37188/CJL.20210195
  CLC： O482.31
- Received：25 May 2021，
  
  Revised：2021-07-06，
  
  Published：01 September 2021
- 稿件说明：
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Qiong ZHANG, Yue-jia WU, Yan-qin FENG, et al. Temperature-dependent Photoluminescence Properties of Cs_0.05FA_0.79MA_0.16PbI_2.52Br_0.48 Perovskite Thin Film[J]. 发光学报, 2021, 42(9): 1396-1402.
DOI：

Qiong ZHANG, Yue-jia WU, Yan-qin FENG, et al. Temperature-dependent Photoluminescence Properties of Cs_0.05FA_0.79MA_0.16PbI_2.52Br_0.48 Perovskite Thin Film[J]. 发光学报, 2021, 42(9): 1396-1402. DOI： 10.37188/CJL.20210195.

摘要

报道了Cs

0.05

0.79

0.16

PbI

2.52

0.48

钙钛矿薄膜的变温光致发光特性. 采用一步旋涂法，用氯苯作反溶剂制备了Cs

0.05

0.79

0.16

PbI

2.52

0.48

钙钛矿薄膜，并对其表面形貌和结晶质量进行了表征. X射线衍射(XRD)分析结果表明其为四方钙钛矿结构. 钙钛矿薄膜表面均匀致密，晶粒尺寸约为300 nm. 在5~200 K温度范围内测量了光致发光强度，结果表明，光致发光光谱连续蓝移约9.36 nm，没有相变引起的反转红移. 光致发光强度随温度的升高呈双指数降低，由Arrhenius方程拟合得到了两个热激活能. 通过玻色-爱因斯坦双谐振子模型对光学带隙进行了拟合，并对非重整化带隙能量、声学声子能量和光学声子能量也进行了拟合. 通过Segall公式拟合光致发光的半峰宽(FWHM)，研究了激子-声子相互作用对光致发光展宽的影响. 在10 K和100 K时，光致发光主要来自激子复合；而在200 K时，辐射复合主要来自自由-束缚对和施主-受主对，这意味着缺陷相关的光致发光是在高温下产生的. 本文详细的光学参数可以为钙钛矿型光电器件的研究提供物理基础.

Abstract

This paper reports the temperature-dependent photoluminescence properties of Cs

0.05

0.79

0.16

PbI

2.52

-Br

0.48

perovskite thin film. The Cs

0.05

0.79

0.16

PbI

2.52

0.48

perovskite thin film was prepared by one-step spin coating with chlorobenzene anti-solvent treatment

and the surface morphology and crystallization quality were characterized. The X-ray diffraction(XRD) indicates that the Cs

0.05

0.79

0.16

PbI

2.52

0.48

has a typical tetragonal perovskite structure. The perovskite film has a uniform and dense surface

and the grain size is about 300 nm. The photoluminescence intensity was measured in the temperature range of 5-200 K. The photoluminescence spectra show a continuous blue shift of about 9.36 nm

and there is no reversal redshift induced by phase transition. The photoluminescence intensity shows a bi-exponential quenching with the increase of temperature

and two thermal activation energies are obtained by Arrhenius equation. The optical bandgap is fitted by the Bose-Einstein double harmonic oscillator model

and the non-renormalized bandgap energy

the energies of acoustic phonon and optical phonon were fitted. The photoluminescence broadening mechanism was studied by the Segall formula. At 10 K and 100 K

the photoluminescence is mainly from exciton recombination

while at 200 K

the radiation recombination is mainly from free-to-bound and donor-acceptor pairs

which means the defect associated photoluminescence arises at high temperature. The detailed optical parameters in our paper can provide a physical foundation for further optimization of perovskite optoelectronic devices.

关键词

Keywords

references

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Qiong ZHANG

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Liwei SUN

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School of Science， Jiangsu University of Science and Technology

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