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Narrow-band Blue Emission of Bi3+ Based on High Crystal Structure Symmetry
增强出版- Chinese Journal of Luminescence Vol. 42, Issue 9, Pages: 1365-1375(2021)
- 作者机构：
中国地质大学(武汉)材料与化学学院 教育部纳米矿物材料及应用工程研究中心，湖北 武汉 430074
- 作者简介：
- 基金信息：National Natural Science Foundation of China(52072349);Fundamental Research Founds for National University, China University of Geosciences (Wuhan)(1910491T02)
DOI：10.37188/CJL.20210141
CLC： O482.31Received：21 April 2021，
Revised：08 May 2021，
Published：01 September 2021
- 稿件说明：
移动端阅览
Yi WEI, Guo-gang LI. Narrow-band Blue Emission of Bi3+ Based on High Crystal Structure Symmetry[J]. Chinese journal of luminescence, 2021, 42(9): 1365-1375.
Yi WEI, Guo-gang LI. Narrow-band Blue Emission of Bi3+ Based on High Crystal Structure Symmetry[J]. Chinese journal of luminescence, 2021, 42(9): 1365-1375. DOI： 10.37188/CJL.20210141.
摘要
采用高温固相法合成了系列K
4
CaGe
3
O
9
∶
x
Bi
3+
(0.003≤
x
≤0.10)荧光粉材料。通过精细Rietveld结构精修、光致激发和发射光谱、X射线光电子衍射及热稳定性等手段对晶体结构和发光性能进行了研究。实验结果表明，在紫外光激发下，Bi
3+
展现了半高宽低至43 nm的窄带蓝光发射。这是由于K
4
CaGe
3
O
9
基质拥有高对称性的晶体结构。与此同时，制备的K
4
CaGe
3
O
9
∶
x
Bi
3+
(0.003≤
x
≤0.10)荧光粉材料展现了卓越的发光热稳定性，在423 K时，发光强度可以保持在室温状态下的83%。上述研究证明制备的K
4
CaGe
3
O
9
∶
x
Bi
3+
(0.003≤
x
≤0.10)荧光粉材料在白光发光二极管(LED)或背光显示中有潜在的应用前景。在高对称性晶体结构中掺杂Bi
3+
实现窄带发光的研究思路可以为未来窄带荧光粉的研发提供理论研究基础和科学依据。
Abstract
A series of new K
4
CaGe
3
O
9
∶
x
Bi
3+
(0.003≤
x
≤0.10) phosphors are prepared
via
traditional high-temperature solid solution route. The detailed crystal structure and photoluminescence properties of K
4
CaGe
3
O
9
∶
x
Bi
3+
(0.003≤
x
≤0.10) materials are studied through precise Rietveld structure refinement
photoluminescence excitation and emission spectra
XPS and thermal stability measurements. According to experimental data
Bi
3+
displays narrow blue emission with spectral width at around 43 nm under n-UV light excitation. The main reason is that K
4
CaGe
3
O
9
shows highly-symmetric crystal structure. Meanwhile
the as-prepared K
4
CaGe
3
O
9
∶
x
Bi
3+
(0.003≤
x
≤0.10) phosphors show excellent thermal stability
of which photoluminescence intensity at 423 K remains 83% than that at 298 K. The above results confirm that the as-prepared K
4
CaGe
3
O
9
∶
x
Bi
3+
(0.003≤
x
≤0.10) phosphors show potential application in white LED lighting and backlight display areas. This work proposes that Bi
3+
can achieve narrow-band emission when doping into highly-symmetric crystal structure. This approach can provide theoretical basis and guidance to exploit Bi
3+
activated narrow-band emitting phosphor materials.
关键词
Keywords
references
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