Ink Formulation of Quantum Dots in Ink Jet Printing

Biao GUO; Lan MU; Yu LUO; Dan-yang LI; Jun-jie WANG; Miao-zi LI; Jun-biao PENG

doi:10.37188/CJL.20210078

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Ink Formulation of Quantum Dots in Ink Jet Printing

Luminescence Industry and Technology Frontier | 更新时间：2021-06-18

- Ink Formulation of Quantum Dots in Ink Jet Printing
  增强出版
- Chinese Journal of Luminescence Vol. 42, Issue 6, Pages: 880-888(2021)
- 作者机构：
  
  华南理工大学发光材料与器件国家重点实验室, 广东广州　 510641
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61574061);Science and Technology Project of Guangdong Province(2015B090914003)
- DOI：10.37188/CJL.20210078
  CLC： O482.31
- Received：04 March 2021，
  
  Revised：2021-03-19，
  
  Published：01 June 2021
- 稿件说明：
移动端阅览
Biao GUO, Lan MU, Yu LUO, et al. Ink Formulation of Quantum Dots in Ink Jet Printing[J]. Chinese Journal of Luminescence, 2021, 42(6): 880-888.
DOI：

Biao GUO, Lan MU, Yu LUO, et al. Ink Formulation of Quantum Dots in Ink Jet Printing[J]. Chinese Journal of Luminescence, 2021, 42(6): 880-888. DOI： 10.37188/CJL.20210078.

摘要

设计了环己基苯与十八烯的双溶剂量子点墨水体系，研究了具有CdSe@ZnS/ZnS核/壳结构的绿光量子点(QDs)成膜规律及其发光特性。设计的高沸点、低表面张力的十八烯和低沸点、高表面张力的环己基苯所组成的双溶剂墨水体系增强了马兰戈尼流，减弱了量子点在像素坑边缘的沉积，实现了在像素坑中制备表面平整的量子点薄膜。研制的分辨率为240 PPI的倒置结构顶发射绿光量子点阵列发光器件启亮电压2.7 V，最高亮度132 510 cd/m

，最大外量子效率14.0%，为采用喷墨打印工艺制备高性能量子点电致发光点阵器件提供了借鉴。

Abstract

In this paper

a two-solvent quantum dot ink system based on cyclohexylbenzene and octadecene was designed

and the film formation and luminescent properties of green quantum dots(QDs) with CdSe@ZnS/ZnS core/shell structure were investigated. The double solvent ink designed with high boiling point

low surface tension of octadecene and high boiling point

low surface tension of cyclohexylbenzene benzene can enhance the Marangoni effect

weaken the quantum dots accumulation on the edge of the pixel pits

and uniform pixel QDs films were achieved. The green quantum dot array light-emitting device with upside-down and top-emitting structure was fabricated with the threshold voltage of 2.7 V

a maximum brightness of 132 510 cd/m

and a maximum external quantum efficiency of 14.0%. The results may provide a reference for the preparation of high-performance QD-LEDs array by inkjet printing technology.

关键词

Keywords

references

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