Temperature-dependent Photoluminescence Properties of All-inorganic Perovskite CsPbBr<sub>3</sub> Microrods

Hu WANG; Jian LU; Zhong-yang WANG

doi:10.37188/CJL.20210062

您当前的位置：

首页 >

文章列表页 >

Temperature-dependent Photoluminescence Properties of All-inorganic Perovskite CsPbBr₃ Microrods

Synthesis and Properties of Materials | 更新时间：2021-06-18

- Temperature-dependent Photoluminescence Properties of All-inorganic Perovskite CsPbBr₃ Microrods
- Chinese Journal of Luminescence Vol. 42, Issue 6, Pages: 849-854(2021)
- 作者机构：
  
  1.中国科学院上海高等研究院宏观量子效应与现象研究中心, 上海　 201210
  2.上海科技大学物质科学与技术学院, 上海　 201210
  3.中国科学院大学, 北京　 100049
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(11674337)
- DOI：10.37188/CJL.20210062
  CLC： O482.31
- Received：13 February 2021，
  
  Revised：2021-03-01，
  
  Published：01 June 2021
- 稿件说明：
移动端阅览
Hu WANG, Jian LU, Zhong-yang WANG. Temperature-dependent Photoluminescence Properties of All-inorganic Perovskite CsPbBr₃ Microrods[J]. Chinese Journal of Luminescence, 2021, 42(6): 849-854.
DOI：

Hu WANG, Jian LU, Zhong-yang WANG. Temperature-dependent Photoluminescence Properties of All-inorganic Perovskite CsPbBr₃ Microrods[J]. Chinese Journal of Luminescence, 2021, 42(6): 849-854. DOI： 10.37188/CJL.20210062.

摘要

通过化学气相沉积法(CVD)在云母基底上制备得到CsPbBr

微米棒，并使用扫描电子显微镜(SEM)、X射线衍射(XRD)对样品形貌和晶体结构进行表征。采用变温(10~290 K)荧光光谱研究了CsPbBr

激子发光的温度依赖特性。实验发现，在室温下CsPbBr

微米棒有两个发光峰，分别为位于2.357 eV、半宽为 52 meV的自由激子发光及能量位于2.298 eV、半宽为 73 meV 的束缚激子发光。从10 K开始，随着温度升高，自由激子的峰位能量单调蓝移，束缚激子的峰位能量在120 K 之前单调蓝移，其后趋于平缓。且激子峰半高宽随温度升高而逐渐增大。这种变温荧光特性主要是由于激子和纵向光学声子(LO)的相互作用引起的。本文有助于进一步理解CsPbBr

光物理特性，对未来高性能光电子器件研究具有指导意义。

Abstract

All-inorganic perovskite CsPbBr

microrods were prepared on mica substrates by chemical vapor deposition(CVD) method. The morphology and crystal structure of the samples were characterized by scanning electron microscopy(SEM) and X-ray diffraction(XRD). The CsPbBr

exciton luminescence was studied by temperature-dependent photoluminescence(PL) spectra from 10 K up to room temperature. The results reveal that there are two emission peaks at 10 K

which were attributed to exciton emission. The peak energy at 2.328 eV with a full width at half maximum(FWHM) of 20 meV was identified to free exciton recombination

and the peak energy at 2.313 eV with a FWHM of 29 meV was assigned to bound exciton emission. The peak energy of the free exciton monotonically blueshifts with the temperature increases

and so does the bound exciton until 120 K. Above 120 K

however

the peak energy of bound exciton tends to be flat when the temperature increases. Furthermore

the FWHM of the free exciton or bound exciton increases gradually. We have demonstrated these temperature-dependent photoluminescence properties are mainly due to the interaction between exciton and longitudinal optical phonons(LO). Our results could provide deeply understanding of intrinsic excitonic properties of CsPbBr

perovskites

which may be helpful to the development of high-performance optoelectronic devices.

关键词

Keywords

references

PROTESESCU L , YAKUNIN S , BODNARCHUK M I , et al . Nanocrystals of cesium lead halide perovskites (CsPbX3, X=Cl, Br, and I): novel optoelectronic materials showing bright emission with wide color gamut [J]. Nano Lett. , 2015 , 15 ( 6 ): 3692 - 3696 .

ZHANG Q , LI G Y , LIU X F , et al . A room temperature low-threshold ultraviolet plasmonic nanolaser [J]. Nat. Commun. , 2014 , 5 : 4953-1-10 .

LI Z Z , LIU X L , XU J , et al . Moisture-induced crystallinity improvement for efficient CsPbI3-xBrx perovskite solar cells with excess cesium bromide [J]. J. Phys. Chem. Lett. , 2019 , 10 ( 16 ): 4587 - 4595 .

SANEHIRA E M , MARSHALL A R , CHRISTIANS J A , et al . Enhanced mobility CsPbI3 quantum dot arrays for record-efficiency, high-voltage photovoltaic cells [J]. Sci. Adv. , 2017 , 3 ( 10 ): eaao4204-1-8 .

YANTARA N , BHAUMIK S , YAN F , et al . Inorganic halide perovskites for efficient light-emitting diodes [J]. J. Phys. Chem. Lett. , 2015 , 6 ( 21 ): 4360 - 4364 .

ZHANG X Y , LIN H , HUANG H , et al . Enhancing the brightness of cesium lead halide perovskite nanocrystal based green light-emitting devices through the interface engineering with perfluorinated ionomer [J]. Nano. Lett. , 2016 , 16 ( 2 ): 1415 - 1420 .

DE GIORGI M L , PERULLI A , YANTARA N , et al . Amplified spontaneous emission properties of solution processed CsPbBr3 perovskite thin films [J]. J. Phys. Chem. C , 2017 , 121 ( 27 ): 14772 - 14778 .

EATON S W , LAI M , GIBSON N A , et al . Lasing in robust cesium lead halide perovskite nanowires [J]. Proc. Natl. Acad. Sci. USA , 2016 , 113 ( 8 ): 1993 - 1998 .

RAMADE J , ANDRIAMBARIARIJAONA L M , STEINMETZ V , et al . Exciton-phonon coupling in a CsPbBr3 single nanocrystal [J]. Appl. Phys. Lett. , 2018 , 112 ( 7 ): 072104-1-4 .

LAO X Z , YANG Z , SU Z C , et al . Anomalous temperature-dependent exciton-phonon coupling in cesium lead bromide perovskite nanosheets [J]. J. Phys. Chem. C , 2019 , 123 ( 8 ): 5128 - 5135 .

WANG Y G , YASAR M , LUO Z Y , et al . Temperature difference triggering controlled growth of all-inorganic perovskite nanowire arrays in air [J]. Small , 2018 , 14 ( 41 ): 1803010-1-8 .

SEBASTIAN M , PETERS J A , STOUMPOS C C , et al . Excitonic emissions and above-band-gap luminescence in the single-crystal perovskite semiconductors CsPbBr3 and CsPbCl3 [J]. Phys. Rev. B , 2015 , 92 ( 23 ): 235210-1-9 .

STOUMPOS C C , MALLIAKAS C D , PETERS J A , et al . Crystal growth of the perovskite semiconductor CsPbBr3:a new material for high-energy radiation detection [J]. Cryst. Growth Des. , 2013 , 13 ( 7 ): 2722 - 2727 .

GABELLONI F , BICCARI F , FALSINI N , et al . Long-living nonlinear behavior in CsPbBr3 carrier recombination dynamics [J]. Nanophotonics , 2019 , 8 ( 9 ): 1447 - 1455 .

PETERS J A , LIU Z F , YU R H , et al . Carrier recombination mechanism in CsPbBr3 revealed by time-resolved photoluminescence spectroscopy [J]. Phys. Rev. B , 2019 , 100 ( 23 ): 235305 .

ZHANG C R , DUAN J J , QIN F F , et al . CsPbBr3 interconnected microwire structure:temperature-related photoluminescence properties and its lasing action [J]. J. Mater. Chem. C , 2019 , 7 ( 34 ): 10454 - 10459 .

AI B , LIU C , DENG Z , et al . Low temperature photoluminescence properties of CsPbBr3 quantum dots embedded in glasses [J]. Phys. Chem. Chem. Phys. , 2017 , 19 ( 26 ): 17349 - 17355 .

WEI K , XU Z J , CHEN R Z , et al . Temperature-dependent excitonic photoluminescence excited by two-photon absorption in perovskite CsPbBr3 quantum dots [J]. Opt. Lett. , 2016 , 41 ( 16 ): 3821 - 3824 .

LIU Z , SHANG Q Y , LI C , et al . Temperature-dependent photoluminescence and lasing properties of CsPbBr3 nanowires [J]. Appl. Phys. Lett. , 2019 , 114 ( 10 ): 101902-1-5 .

MANNINO G , DERETZIS I , SMECCA E , et al . Temperature-dependent optical band gap in CsPbBr3, MAPbBr3, and FAPbBr3 single crystals [J]. J. Phys. Chem. Lett. , 2020 , 11 ( 7 ): 2490 - 2496 .

Views

475

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Electric Field-driven Near-infrared Light-emitting Diodes from Excitons in Few-layer Black Phosphorus

Research Progress on Photogating Effect in Regulating Response Characteristics of Photodetectors

Advances in High-energy Irradiation Stability and Damage Mechanisms of Perovskite Materials

Regulation of Perovskite Crystallization Process and Its Mechanism Based on Green Anti-solvent Engineering

Related Author

Hu WANG

Jian LU

Zhong-yang WANG

LIANG Yaning

ZHANG Junrong

WANG Siyuan

WANG Xiangyi

YAO Yun

Related Institution

Research Center of Quantum Macro-Phenomenon and Application， Shanghai Advanced Research Institute， Chinese Academy of Sciences

School of Physical Science and Technology， ShanghaiTech University

School of Materials Science and Engineering， Shanghai University

Suzhou Institute of Nano-Tech and Nano-Bionics （SINANO）， Chinese Academy of Sciences， Suzhou

School of Material Science and Engineering， Hebei University of Technology

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰

Temperature-dependent Photoluminescence Properties of All-inorganic Perovskite CsPbBr3 Microrods

DOI：10.37188/CJL.20210062

摘要

Abstract

关键词

Keywords

references

Temperature-dependent Photoluminescence Properties of All-inorganic Perovskite CsPbBr₃ Microrods