Effect of Interfacial Modification for TiO<sub>2</sub>-based Planar Perovskite Solar Cells Using NaTFSI

Yu ZOU; Zhao LI; Heng-hui CHEN; Yi-chen LIU; An-ling TONG; Hui-ying YAN; Ruo-wei HE; Guo-xin HUA; Wei-dong ZENG; Wei-hai SUN

doi:10.37188/CJL.20210045

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Effect of Interfacial Modification for TiO₂-based Planar Perovskite Solar Cells Using NaTFSI

Device Fabrication and Physics | 更新时间：2021-05-20

- Effect of Interfacial Modification for TiO₂-based Planar Perovskite Solar Cells Using NaTFSI
- Chinese Journal of Luminescence Vol. 42, Issue 5, Pages: 682-690(2021)
- 作者机构：
  
  华侨大学　材料科学与工程学院，物理化学研究所，福建省光电功能材料重点实验室，环境友好功能材料教育部工程研究中心，福建　厦门　 361021
- 作者简介：
- 基金信息：
  
  The Joint Funds of the National Natural Science Foundation of China(U1705256);National Natural Science Foundation of China(1771066;51972123;61804058);The Promotion Program for Young and Middle-Aged Teacher in Science and Technology Research of Huaqiao University(ZQN-706)
- DOI：10.37188/CJL.20210045
  CLC： TM914.4
- Received：30 January 2021，
  
  Revised：2021-02-13，
  
  Published：01 May 2021
- 稿件说明：
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Yu ZOU, Zhao LI, Heng-hui CHEN, et al. Effect of Interfacial Modification for TiO₂-based Planar Perovskite Solar Cells Using NaTFSI[J]. Chinese Journal of Luminescence, 2021, 42(5): 682-690.
DOI：

Yu ZOU, Zhao LI, Heng-hui CHEN, et al. Effect of Interfacial Modification for TiO₂-based Planar Perovskite Solar Cells Using NaTFSI[J]. Chinese Journal of Luminescence, 2021, 42(5): 682-690. DOI： 10.37188/CJL.20210045.

摘要

在钙钛矿太阳能电池(PSCs)中，光吸收钙钛矿层夹在电子传输层(ETL)和空穴传输层(HTL)之间。钙钛矿层与电荷传输层之间的界面复合被认为是诱发器件电压损失的主要原因。通过对电荷传输层的修饰，不仅可以提高其电荷传输性能，而且还可以钝化界面缺陷，从而提高电池的光电转换效率(PCE)和稳定性。通过在平面二氧化钛层上引入一层双(三氟甲基磺酰基)亚胺钠(NaTFSI)来修饰二氧化钛ETL和钙钛矿之间的界面。实验结果显示，利用NaTFSI界面层修饰二氧化钛ETL不仅可以增大上层钙钛矿晶粒尺寸大小，减少晶界从而降低界面载流子复合;而且NaTFSI修饰后的ETL导电性增强，功函数降低。最后，通过优化NaTFSI界面层，实现了器件效率从18.62%至19.83%的显著提升。

Abstract

A typical perovskite solar cell(PSC) structure involves the light absorbing perovskite layer sandwiched between the electron-transport layer(ETL) and the hole-transport layer(HTL). The charge recombination at the interface between the perovskite layer and the charge-transport layer is considered to be the major cause of the voltage loss of the device. With the modification of the charge-transport layer

it can not only improve its charge transport properties

but also passivate the interface defects

thus enhancing the power conversion efficiency(PCE) and stability of the PSCs. The interface between ETL and perovskite is modified by introducing Na [(CF

)

N] (NaTFSI) on the planar TiO

layer. Experimental results show that the ETL modified with the NaTFSI interface layer could not only increase the size of the perovskite grains

but also reduce the grain boundaries and the interface carrier recombination. In addition

the ETL modified with the Na-TFSI can also enhance the conductivity of the ETL and decrease its work function. Finally

we achieved a significant increase in device efficiency from 18.62% to 19.83% by optimizing the NaTFSI interface layer.

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references

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Effect of Interfacial Modification for TiO2-based Planar Perovskite Solar Cells Using NaTFSI

DOI：10.37188/CJL.20210045

摘要

Abstract

关键词

Keywords

references

Effect of Interfacial Modification for TiO₂-based Planar Perovskite Solar Cells Using NaTFSI