Single In<sub>2</sub>O<sub>3</sub> Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity

Xue CHEN; Zhi-peng WEI

doi:10.37188/CJL.20200376

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Single In₂O₃ Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity

Device Fabrication and Physics | 更新时间：2021-02-08

- Single In₂O₃ Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity
- Chinese Journal of Luminescence Vol. 42, Issue 2, Pages: 208-214(2021)
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室, 吉林长春 130022
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China;National Natural Science Foundation of China;National Natural Science Foundation of China;Foundation of State Key Laboratory of High Power Semiconductor Lasers;the Developing Project of Science and Technology of Jilin Province;the Project of Education Department of Jilin Province;The Youth Foundation of Changchun University of Science and Technology
- DOI：10.37188/CJL.20200376
  CLC： O472.8
- Received：08 December 2020，
  
  Accepted：28 December 2020，
  
  Published：2021-02
- 稿件说明：
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Xue CHEN, Zhi-peng WEI. Single In₂O₃ Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity[J]. Chinese journal of luminescence, 2021, 42(2): 208-214.
DOI：

Xue CHEN, Zhi-peng WEI. Single In₂O₃ Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity[J]. Chinese journal of luminescence, 2021, 42(2): 208-214. DOI： 10.37188/CJL.20200376.

摘要

纳米线由于其独特性质而成为紫外光电探测器的潜力候选者，目前，In

纳米线基紫外光电探测器已被广泛研究，但较大的暗电流限制了其进一步应用。本文制备了In

纳米线紫外光电晶体管，通过背栅电压的调制作用，器件中的暗电流几乎被全部耗尽，同时，由于光照下的阈值偏移，栅压对光电流的影响较小。最终得到具有高光开关比（1.07×10

）和高响应度（5.58×10

A/W）的单根In

纳米线紫外光电晶体管，性能明显优于之前报道的In

纳米结构光电探测器。本工作促进了In

纳米线在下一代纳米光电子器件和集成电路中的应用。

Abstract

Owing to the unique properties

nanowires have become potential candidates for ultraviolet photodetectors. To date

nanowires-based UV photodetectors have been extensively studied. However

the large dark current limits its further applications. In this paper

a single In

nanowire ultraviolet phototransistor is performed. Through the modulation of the back gate voltage

the dark current is almost completely depleted. At the same time

the threshold voltage shows a shift under illumination

leading to little dependence between gate voltage and photocurrent. Finally

a single In

nanowire ultraviolet phototransistor with a high optical on-off ratio of 1.07×10

and a high responsivity of 5.58×10

A/W was obtained

which is better than the previously reported In

nanostructured optoelectronic devices. This work promotes the application of In

nanowires in the next generation of nano-optoelectronic devices and integrated circuits.

关键词

Keywords

references

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Related Author

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Related Institution

State Key Laboratory of High Power Semiconductor Lasers， Changchun University of Science and Technology， +Changchun

State Key Laboratory of Integrated Optoelectronics， College of Electronic Science and Engineering， Jilin University

School of Material Science and Engineering， Hebei University of Technology

Engineering Research Center of Optoelectronic Functional Materials， Ministry of Education

School of Materials Science and Engineering， Changchun University of Science and Technology

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Single In2O3 Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity

DOI：10.37188/CJL.20200376

摘要

Abstract

关键词

Keywords

references

Single In₂O₃ Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity