High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

您当前的位置：

首页 >

文章列表页 >

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

paper | 更新时间：2020-08-12

- High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition
- Chinese Journal of Luminescence Vol. 32, Issue 9, Pages: 896-901(2011)
- 作者机构：
  
  1. 天津中环新光科技有限公司天津,300385
  2. 北京凝聚态物理国家实验室, 中国科学院物理研究所清洁能源实验室, 北京 100190
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472
- Received：08 March 2011，
  
  Revised：2011-4-26，
  
  Published Online：22 September 2011，
  
  Published：22 September 2011
- 稿件说明：
移动端阅览
陈耀, 王文新, 黎艳, 江洋, 徐培强, 马紫光, 宋京, 陈弘. 国产SiC衬底上利用AlN缓冲层生长高质量GaN外延薄膜[J]. 发光学报, 2011,32(9): 896-901

CHEN Yao, WANG Wen-xin, LI Yan, JIANG Yang, XU Pei-qiang, MA Zi-guang, SONG Jing, CHEN Hong. High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2011,32(9): 896-901
陈耀, 王文新, 黎艳, 江洋, 徐培强, 马紫光, 宋京, 陈弘. 国产SiC衬底上利用AlN缓冲层生长高质量GaN外延薄膜[J]. 发光学报, 2011,32(9): 896-901 DOI：

CHEN Yao, WANG Wen-xin, LI Yan, JIANG Yang, XU Pei-qiang, MA Zi-guang, SONG Jing, CHEN Hong. High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2011,32(9): 896-901 DOI：

摘要

采用高温AlN作为缓冲层在国产SiC衬底上利用金属有机物化学气相外延技术生长GaN外延薄膜。通过优化AlN缓冲层的生长参数得到了高质量的GaN外延薄膜

其对称(0002)面和非对称(101 2)面X射线衍射摇摆曲线的半峰宽分别达到130 arcsec和252 arcsec

这是目前报道的在国产SiC衬底上生长GaN最好的结果。文中研究了AlN缓冲层生长参数对GaN晶体质量的影响

还利用拉曼散射研究了GaN外延薄膜中的应力

发现具有越小X射线衍射摇摆曲线半峰宽的GaN外延薄膜受到的张应力也越小。

Abstract

GaN is considered as a promising material for high power

high temperature and high frequency microwave applications

due to the wide band gap

high thermal stability and high breakdown voltage. Due to lack of suited homosubstrates

GaN is currently grown on heterosubstrates where SiC is the most popular choice for commercial applications. However

it is difficult to obtain high quality GaN because of the 33.1% mismatch of thermal expansion coefficients and the large lattice mismatch (3.5%) between GaN and SiC. In this paper

GaN epitaxial layers were grown on 6H-SiC substrates by metalorganic chemical vapor deposition. Samples employing high temperature AlN as buffer layers produce high quality GaN epitaxial layers. Five samples with different AlN buffer layers were prepared. The effects of the growth parameters of AlN buffer layers on characterizations of GaN were studied. The highest quality GaN layer grown on SiC substrate with AlN buffer was obtained by optimizing the growth parameters of the AlN buffer. The full width at half maximum of High-resolution X-ray diffraction on-axis (0002) and off-axis (101 2) diffraction are 130 arcsec and 252 arcsec

respectively. The values are the best result of GaN grown on homemade 6H-SiC. The quality of GaN layers will be deteriorated by increasing the thickness or the growth Ⅴ/Ⅲ ratio of AlN buffer layers

while the low growth temperature of AlN buffers also deteriorate the quality of GaN layers. The strain in GaN also has been studied. It is found that the GaN layer with narrow XRC FWHM has less stress intensity.

关键词

Keywords

references

Khan M A, Bhattarai A, Kuznia J N, et al. High electron mobility transistor based on a GaN/AIGaN heterojunction [J]. Appl. Phys. Lett., 1993, 63 (9):1214-1216.[2] Nakamura S, Mukai T, Senoh M. Candela class high brightness InGaN/AlGaN double heterostructure blue light emitting diodes [J]. Appl. Phys. Lett., 1994, 64 (13):1687-1689.[3] Li Zhonghui, Yang Zhijian, Yu Tongjun, et al. InGaN/GaN MQW violet-LED Grown by LP-MOCVD [J]. Chin. J. Lumin. (发光学报), 2006, 27 (1):107-109 (in Chinese).[4] Xiao Youpeng, Mo Chunlan, Qiu Chong, et al. The aging characteristics of GaN based blue LED on Si substrate [J]. Chin. J. Lumin. (发光学报), 2010, 31 (3):364-368 (in Chinese).[5] Lin Jieben, Guo Zhenning, Chen Libai, et al. Watt-level high power InGaN blue LED photometric chromatric and electric characteristics [J]. Chin. J. Lumin. (发光学报), 2009, 30 (3):379-384 (in Chinese).[6] Li Guangru, Qin Zhixin, Sang Liwen, et al. Fabrication and characterization of GaN base p-i-n avalanche photodetectors [J]. Chin. J. Lumin. (发光学报), 2011, 32 (3):262-265 (in English).[7] Weeks T W, Bremser M D, Ailey K S, et al. GaN thin films deposited via organometallic vapor phase epitaxy on (6H)-SiC(0001) using high-temperature monocrystalline AlN buffer layers [J]. Appl. Phys. Lett., 1995, 67 (3):401-402.[8] Moran B, Wu F, Romanov A E, et al. Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer [J]. J. Cryst. Growth, 2004, 273 (1-2):38-47.[9] Lahreche H, Vennegues P, Vaille M, et al. Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers [J]. Semicond. Sci. Technol., 1999, 14 (11):L33-L36.[10] Einfeldt S, Roskowski A M, Preble E A, et al. Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy [J]. Appl. Phys. Lett., 2002, 80 (6):953-955.[11] Ponce F A, Krusor B S, Major J S, et al. Microstructure of GaN epitaxy on SiC using AlN buffer layers [J]. Appl. Phys. Lett., 1995, 67 (3):410-412.[12] Koleske D D, Henry R L, Twigg M E, et al. Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC [J]. Appl. Phys. Lett., 2002, 80 (23):4372-4374.[13] Waltereit P, Brandt O, Trampert A, et al. Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H-SiC(0001) [J]. Appl. Phys. Lett., 1999, 74 (24):3660-3362.[14] Tanaka S, Iwai S, Aoyagi Y, et al. Reduction of the defect density in GaN films using ultra-thin A1N buffer layers on 6H-SiC [J]. J. Cryst. Growth, 1997, 170 (1-4):329-334[15] Heying B, Wu X H, Keller S, et al. Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films [J]. Appl. Phys. Lett., 1996, 68 (5):643-645.[16] Daisuke M, Akira F, Takashi M, et al. Dislocation reduction mechanism in low-nucleation-density GaN growth using AlN templates [J]. Jpn. J. Appl. Phys., 2007, 46 (5):2895-2900.[17] Nishida T, Kobayashi N. Nucleation control in MOVPE of group Ⅲ-nitrides on SiC substrate [J]. J. Cryst. Growth, 2000, 221 (1-4):297-300.[18] Wang Lai, Wang Lei, Ren Fan, et al. GaN grown on AlN/sapphire templates [J]. Acta Physica Sinica (物理学报),2010, 59 (11):8021-8025 (in Chinese).[19] Yamada S, Kato J, Tanaka S. Nucleation and growth kinetics of AlN films on atomically smooth 6H-SiC (0001) surfaces [J]. Appl. Phys. Lett., 1993, 78 (23):3612-3614.[20] Harima H. Properties of GaN and related compounds studied by means of Raman scattering [J]. J. Phys.: Condens. Matter, 2002, 14 (38):R967-R994.[21] Kisielowski C, Krger J, Ruvimov S, et al. Strain-related phenomena in GaN thin films [J]. Phys. Rev. B, 1996, 54 (24):17745-17754.[22] Ahmad I, Holtz M, Faleev N N, et al. Dependence of the stress-temperature coefficient on dislocation density in epitaxial GaN grown on a-Al2O3 and 6H-SiC substrates [J]. J. Appl. Phys., 2004, 95 (4):1692-1698.[23] Einfeldt S, Reitmeier Z J, Davis R F. Surface morphology and strain of GaN layers grown using 6H-SiC (0001) substrates with different buffer layers [J]. J. Cryst. Growth, 2003, 253 (1-4):129-141.

0

Views

420

下载量

11

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Related Articles

Optimization of Two-step AlN Buffer of a-plane GaN Films Grown on r-plane Sapphire by MOCVD

Influence of Substrate Miscut on Properties of GaN-based LED Films Grown on Si(111)

Influence of AlN Buffer Layer on Properties of GaN Epitaxial Film Grown on Si Substrate

Optical Transmission Study on GaN Films Grown by Metal-organic Chemical Vapor Deposition

Related Author

HE Tao

CHEN Yao

LI Hui

DAI Long-gui

WANG Xiao-li

XU Pei-qiang

WANG Wen-xin

CHEN Hong

Related Institution

Beijing National Laboratory of Condensed Matter, Institute of Physics, Chinese Academy of Sciences

Faculty of Information Technology， Key Laboratory of Opto-electronics Technology，Ministry of Education Beijing University of Technology

State Key Laboratory of High Power Semiconductor Lasers of Changchun University of Science and Technology

Suzhou Institute of Nano-Tech and Nano-Bionics， Chinese Academy of Sciences

National Engineering Research Center for LED on Si Substrate, Nanchang University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰