High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

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High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

paper | 更新时间：2020-08-12

- High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition
- Chinese Journal of Luminescence Vol. 32, Issue 9, Pages: 896-901(2011)
- 作者机构：
  
  1. 天津中环新光科技有限公司天津,300385
  2. 北京凝聚态物理国家实验室, 中国科学院物理研究所清洁能源实验室, 北京 100190
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472
- Received：08 March 2011，
  
  Revised：26 April 2011，
  
  Published Online：22 September 2011，
  
  Published：22 September 2011
- 稿件说明：
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陈耀, 王文新, 黎艳, 江洋, 徐培强, 马紫光, 宋京, 陈弘. 国产SiC衬底上利用AlN缓冲层生长高质量GaN外延薄膜[J]. 发光学报, 2011,32(9): 896-901

CHEN Yao, WANG Wen-xin, LI Yan, JIANG Yang, XU Pei-qiang, MA Zi-guang, SONG Jing, CHEN Hong. High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2011,32(9): 896-901
陈耀, 王文新, 黎艳, 江洋, 徐培强, 马紫光, 宋京, 陈弘. 国产SiC衬底上利用AlN缓冲层生长高质量GaN外延薄膜[J]. 发光学报, 2011,32(9): 896-901 DOI：

CHEN Yao, WANG Wen-xin, LI Yan, JIANG Yang, XU Pei-qiang, MA Zi-guang, SONG Jing, CHEN Hong. High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2011,32(9): 896-901 DOI：

摘要

采用高温AlN作为缓冲层在国产SiC衬底上利用金属有机物化学气相外延技术生长GaN外延薄膜。通过优化AlN缓冲层的生长参数得到了高质量的GaN外延薄膜

其对称(0002)面和非对称(101 2)面X射线衍射摇摆曲线的半峰宽分别达到130 arcsec和252 arcsec

这是目前报道的在国产SiC衬底上生长GaN最好的结果。文中研究了AlN缓冲层生长参数对GaN晶体质量的影响

还利用拉曼散射研究了GaN外延薄膜中的应力

发现具有越小X射线衍射摇摆曲线半峰宽的GaN外延薄膜受到的张应力也越小。

Abstract

GaN is considered as a promising material for high power

high temperature and high frequency microwave applications

due to the wide band gap

high thermal stability and high breakdown voltage. Due to lack of suited homosubstrates

GaN is currently grown on heterosubstrates where SiC is the most popular choice for commercial applications. However

it is difficult to obtain high quality GaN because of the 33.1% mismatch of thermal expansion coefficients and the large lattice mismatch (3.5%) between GaN and SiC. In this paper

GaN epitaxial layers were grown on 6H-SiC substrates by metalorganic chemical vapor deposition. Samples employing high temperature AlN as buffer layers produce high quality GaN epitaxial layers. Five samples with different AlN buffer layers were prepared. The effects of the growth parameters of AlN buffer layers on characterizations of GaN were studied. The highest quality GaN layer grown on SiC substrate with AlN buffer was obtained by optimizing the growth parameters of the AlN buffer. The full width at half maximum of High-resolution X-ray diffraction on-axis (0002) and off-axis (101 2) diffraction are 130 arcsec and 252 arcsec

respectively. The values are the best result of GaN grown on homemade 6H-SiC. The quality of GaN layers will be deteriorated by increasing the thickness or the growth Ⅴ/Ⅲ ratio of AlN buffer layers

while the low growth temperature of AlN buffers also deteriorate the quality of GaN layers. The strain in GaN also has been studied. It is found that the GaN layer with narrow XRC FWHM has less stress intensity.

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references

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