Fabrication and Characterization of GaN Based p-i-n Avalanche Photodetectors

LI Guang-ru; QIN Zhi-xin; SANG Li-wen; SHEN Bo; ZHANG Guo-yi

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Fabrication and Characterization of GaN Based p-i-n Avalanche Photodetectors

paper | 更新时间：2020-08-12

- Fabrication and Characterization of GaN Based p-i-n Avalanche Photodetectors
- Chinese Journal of Luminescence Vol. 32, Issue 3, Pages: 262-265(2011)
- 作者机构：
  
  北京大学物理学院人工微结构和介观物理国家重点实验室北京,100871
- 作者简介：
- 基金信息：
  
  Projects supported by National Natural Science Foundation of China Grant (10774001,6
- DOI：
  CLC： TN364
- Received：25 August 2010，
  
  Revised：01 December 2010，
  
  Published：2011
- 稿件说明：
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李广如, 秦志新, 桑立雯, 沈波, 张国义. GaN基p-i-n型雪崩探测器的制备与表征[J]. 发光学报, 2011,32(3): 262-265

LI Guang-ru, QIN Zhi-xin, SANG Li-wen, SHEN Bo, ZHANG Guo-yi. Fabrication and Characterization of GaN Based p-i-n Avalanche Photodetectors[J]. Chinese Journal of Luminescence, 2011,32(3): 262-265
李广如, 秦志新, 桑立雯, 沈波, 张国义. GaN基p-i-n型雪崩探测器的制备与表征[J]. 发光学报, 2011,32(3): 262-265 DOI：

LI Guang-ru, QIN Zhi-xin, SANG Li-wen, SHEN Bo, ZHANG Guo-yi. Fabrication and Characterization of GaN Based p-i-n Avalanche Photodetectors[J]. Chinese Journal of Luminescence, 2011,32(3): 262-265 DOI：

摘要

制备和表征了p-i-n型的GaN基雪崩探测器。器件在-5 V下的暗电流约为0.05 nA

-20 V下的暗电流小于 0.5 nA。响应增益-偏压曲线显示

可重复的雪崩增益起始于80 V附近

在85 V左右增益达到最大为120

表明所制备的器件具有较好的质量。

C-V

测量用来确定载流子的分布和耗尽信息

结果显示

p型层在15 V左右达到耗尽

对应的空穴载流子浓度在1.910

-1

左右

相对低的载流子浓度降低了电场限制

使探测器的工作电压相对偏高。在不同偏压下测量的光谱响应曲线显示出明显的Franz-Keldysh效应。

Abstract

p-i-n GaN based avalanche UV photodetectors were fabricated and characterized. Dark current of the device is as low as 0.05 nA at the reverse bias of 5 V and ＜0.5 nA at 20 V. Repeatable photocurrent avalanche gain

began at around 80 V and grew up to a peak of 120 at about 85 V

demonstrating a good material quality.

C-V

mea-surement was used to determine carrier distribution and depletion information

and it showed that p-layer fully depleted at reverse bias of about 15 V

resulting in a hole concentration of 1.910

-3

. The relative low hole concentration might lead to a weak confinement of electrical field and an increase in the operating voltage of the device. Photocurrent spectroscopy under various bias was also measured and exhibited obvious Franz-Keldysh effect.

关键词

Keywords

references

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