Binding Energies of Impurity States in a Strained Wurtzite GaN/AlxGa1-xN Cylindrical Quantum Dot Influenced by Hydrostatic Pressure

ZHANG Wen-qiang; YAN Zu-wei

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Binding Energies of Impurity States in a Strained Wurtzite GaN/Al_xGa_1-xN Cylindrical Quantum Dot Influenced by Hydrostatic Pressure

paper | 更新时间：2020-08-12

- Binding Energies of Impurity States in a Strained Wurtzite GaN/Al_xGa_1-xN Cylindrical Quantum Dot Influenced by Hydrostatic Pressure
- Chinese Journal of Luminescence Vol. 32, Issue 2, Pages: 115-121(2011)
- 作者机构：
  
  1. 内蒙古大学物理科学与技术学院,内蒙古呼和浩特,010021
  2. 内蒙古农业大学理学院,内蒙古呼和浩特,010018
- 作者简介：
- 基金信息：
- DOI：
  CLC： O471.3
- Received：05 July 2010，
  
  Revised：25 September 2010，
  
  Published：2011
- 稿件说明：
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张文强, 闫祖威. 纤锌矿GaN/AlxGa1-xN应变柱形量子点中杂质态结合能及其压力效应[J]. 发光学报, 2011,32(2): 115-121

ZHANG Wen-qiang, YAN Zu-wei. Binding Energies of Impurity States in a Strained Wurtzite GaN/AlxGa1-xN Cylindrical Quantum Dot Influenced by Hydrostatic Pressure[J]. Chinese Journal of Luminescence, 2011,32(2): 115-121
张文强, 闫祖威. 纤锌矿GaN/AlxGa1-xN应变柱形量子点中杂质态结合能及其压力效应[J]. 发光学报, 2011,32(2): 115-121 DOI：

ZHANG Wen-qiang, YAN Zu-wei. Binding Energies of Impurity States in a Strained Wurtzite GaN/AlxGa1-xN Cylindrical Quantum Dot Influenced by Hydrostatic Pressure[J]. Chinese Journal of Luminescence, 2011,32(2): 115-121 DOI：

摘要

考虑应变及流体静压力

在有效质量近似下

利用变分法计算了无限高 GaN/Al

1－

N应变柱形量子点中类氢杂质结合能。结果表明

在量子点尺寸较小情况下

应变增加了杂质态结合能;而在量子点尺寸较大情况下

应变降低了杂质态结合能。随着Al摩尔分数的增加

杂质态结合能减小。杂质态结合能随着流体静压力的增加而增大

在量子点尺寸较小的情况下

流体静压力对杂质态结合能的影响更明显。

Abstract

In the framework of effective mass approximation

a variational method is adopted to discuss the binding energies of hydrogenic impurity in a strained wurtzite cylindrical quantum dot by considering the hydrostatic pressure. The results indicate that the binding energies of hydrogenic impurity with strain effect are higher than that without strain effect when the quantum dot height is small

but the binding energies with strain effect become lower than that without strain effect as the quantum dot height increases. It is also found that the binding energies of hydrogenic impurity decrease when the mole fraction of Al increase. In addition

the bin-ding energies of impurity increase obviously with hydrostatic pressure

and the hydrostatic pressure has a remarkable influence on the donor binding energy for small quantum dot.

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Keywords

references

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