Photoluminescent Properties of CdS Quantum Dots Doped in Silica Xerogel

XU Lei-hua; QIANG Ying-huai; JIANG Li

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Photoluminescent Properties of CdS Quantum Dots Doped in Silica Xerogel

paper | 更新时间：2020-08-12

- Photoluminescent Properties of CdS Quantum Dots Doped in Silica Xerogel
- Chinese Journal of Luminescence Vol. 32, Issue 3, Pages: 227-231(2011)
- 作者机构：
  
  中国矿业大学材料科学与工程学院, 江苏徐州 221116
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Received：11 August 2010，
  
  Revised：2010-10-11，
  
  Published Online：22 March 2011，
  
  Published：22 March 2011
- 稿件说明：
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徐磊华, 强颖怀, 江利. SiO<sub>2</sub> 干凝胶中CdS量子点的光致发光性质[J]. 发光学报, 2011,32(3): 227-231

XU Lei-hua, QIANG Ying-huai, JIANG Li. Photoluminescent Properties of CdS Quantum Dots Doped in Silica Xerogel[J]. Chinese Journal of Luminescence, 2011,32(3): 227-231
徐磊华, 强颖怀, 江利. SiO<sub>2</sub> 干凝胶中CdS量子点的光致发光性质[J]. 发光学报, 2011,32(3): 227-231 DOI：

XU Lei-hua, QIANG Ying-huai, JIANG Li. Photoluminescent Properties of CdS Quantum Dots Doped in Silica Xerogel[J]. Chinese Journal of Luminescence, 2011,32(3): 227-231 DOI：

摘要

以正硅酸乙酯(TEOS)为SiO

的前驱物

硝酸镉为镉源

硫脲为硫源

用溶胶-凝胶法制备了CdS量子点掺杂的SiO

干凝胶

利用XRD、紫外-可见吸收光谱、光致发光谱对其性质进行研究。样品的测试结果表明在SiO

干凝胶的网状结构中形成了CdS量子点

平均粒径为5.1 nm。SiO

凝胶中CdS吸收峰位置明显蓝移。在一定浓度范围内

SiO

干凝胶中CdS量子点的光致发光强度随着掺杂量的增大而增强

当掺杂摩尔分数达到0.5%时

其荧光增强效应达到最大;随后

其发光强度开始减弱。

Abstract

The CdS nanocryticles doped silica xerogels were prepared by using the sol-gel method

where tetraethoxysilane (TEOS) was employed as the main precursor and cadmium nitrate

thiourea as start materials. The X-ray diffraction pattern indicated that silica xerogels are noncrystalline structure and the mean diameter of the CdS particles is 5.1 nm. The PL emission spectrum of the undoped silica xerogels showed weak emission peaked at 460 nm that could be attributed to the intrinsic defect states of silica xerogel. For 0.5% CdS-doped samples

the photoluminescence intensity reached maximum. The PL excitation spectra of undoped silica xerogel show that only one peak at 350 nm is observed. For CdS-doped samples

a new peak at 380 nm is observed

which could be attribute to the doping CdS quantum dots.

关键词

Keywords

references

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School of Resources， Environment and Materials， Guangxi University

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