Photoluminescent Properties of CdS Quantum Dots Doped in Silica Xerogel

XU Lei-hua; QIANG Ying-huai; JIANG Li

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Photoluminescent Properties of CdS Quantum Dots Doped in Silica Xerogel

paper | 更新时间：2020-08-12

- Photoluminescent Properties of CdS Quantum Dots Doped in Silica Xerogel
- Chinese Journal of Luminescence Vol. 32, Issue 3, Pages: 227-231(2011)
- 作者机构：
  
  中国矿业大学材料科学与工程学院, 江苏徐州 221116
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Received：11 August 2010，
  
  Revised：11 October 2010，
  
  Published Online：22 March 2011，
  
  Published：22 March 2011
- 稿件说明：
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徐磊华, 强颖怀, 江利. SiO<sub>2</sub> 干凝胶中CdS量子点的光致发光性质[J]. 发光学报, 2011,32(3): 227-231

XU Lei-hua, QIANG Ying-huai, JIANG Li. Photoluminescent Properties of CdS Quantum Dots Doped in Silica Xerogel[J]. Chinese Journal of Luminescence, 2011,32(3): 227-231
徐磊华, 强颖怀, 江利. SiO<sub>2</sub> 干凝胶中CdS量子点的光致发光性质[J]. 发光学报, 2011,32(3): 227-231 DOI：

XU Lei-hua, QIANG Ying-huai, JIANG Li. Photoluminescent Properties of CdS Quantum Dots Doped in Silica Xerogel[J]. Chinese Journal of Luminescence, 2011,32(3): 227-231 DOI：

摘要

以正硅酸乙酯(TEOS)为SiO

的前驱物

硝酸镉为镉源

硫脲为硫源

用溶胶-凝胶法制备了CdS量子点掺杂的SiO

干凝胶

利用XRD、紫外-可见吸收光谱、光致发光谱对其性质进行研究。样品的测试结果表明在SiO

干凝胶的网状结构中形成了CdS量子点

平均粒径为5.1 nm。SiO

凝胶中CdS吸收峰位置明显蓝移。在一定浓度范围内

SiO

干凝胶中CdS量子点的光致发光强度随着掺杂量的增大而增强

当掺杂摩尔分数达到0.5%时

其荧光增强效应达到最大;随后

其发光强度开始减弱。

Abstract

The CdS nanocryticles doped silica xerogels were prepared by using the sol-gel method

where tetraethoxysilane (TEOS) was employed as the main precursor and cadmium nitrate

thiourea as start materials. The X-ray diffraction pattern indicated that silica xerogels are noncrystalline structure and the mean diameter of the CdS particles is 5.1 nm. The PL emission spectrum of the undoped silica xerogels showed weak emission peaked at 460 nm that could be attributed to the intrinsic defect states of silica xerogel. For 0.5% CdS-doped samples

the photoluminescence intensity reached maximum. The PL excitation spectra of undoped silica xerogel show that only one peak at 350 nm is observed. For CdS-doped samples

a new peak at 380 nm is observed

which could be attribute to the doping CdS quantum dots.

关键词

Keywords

references

Jiang Daixun, Cao Lixin, Su Ge, et al. Synthesis and photoluminescent properties of ZnS ∶ Mn/CdS nanoparticles with core/shell structure [J]. Chin. J. Lumin. (发光学报), 2009, 30 (6):832-837 (in Chinese).[2] Jayanthi K, Chawla S, Chander H, et al. Structural, optical and photoluminescence properties of ZnS ∶ Cu nanoparticle thin films as a function of dopant concentration and quantum confinement effect [J]. Cryst. Res. Technol., 2007, 42 (10):976-982.[3] Gan Xinhui, Liao Yuanbao, Liu Dong, et al. Chemical bath deposition and optical properties of CdS nanocrystalline films with tunable electronic band gap [J]. Chin. J. Lumin. (发光学报), 2008, 29 (6):1076-1080 (in Chinese).[4] Correa-Duarte M A, Giersog M, Liz-Marzn L M. Stabilization of CdS semiconductor nanoparticles against photodegradation by silica coating procedure [J]. Chem. Phys. Lett., 1998, 286 (5-6):497-501.[5] Li Qiyuan, Wei Changping, Sun Xiaofei. Optical properties of ZnO／SiO2 composite film [J]. Chin. J. Lumin. (发光学报), 2009, 30 (3):385-388 (in Chinese).[6] Cai Jinjun, Wang Yi, Pan Huanhuan, et al. Preparation and photoluminescence of green Zn2SiO4 ∶ Mn2＋ phosphor by sol-gel method [J]. Chin. J. Lumin. (发光学报), 2010, 31 (1):75-78 (in Chinese).[7] Bekiari V, Lianos P. Characterization of photoluminescence from a material made by interaction of (3-aminopropyl)-triethoxysilane with acetic acid [J]. Langmuir, 1998, 14 (13):3459-3461.[8] Zhao Limin, Shao Xing, Kong Ying. The design and characterization of inorganic／organic hybrid luminescence molecule materials with terbium-sulfosalieylic acid complexes [J]. Chin. J. Lumin. (发光学报), 2009, 30 (6):862-866 (in Chinese).[9] Mu J, Gu D Y, Xu Z Z. Synthesis and stabilization of CdS nanoparticles embedded in silica nanospheres [J]. Appl. Phys. A, 2005, 80 (7):1425-1429.[10] Rao A P, Pajonk G M, Rao A V. Effect of pH, aging, and drying on the size of CdS nanocrystallites, monolithicity, and transparency of nanocrystalline CdS-doped silica xerogels [J]. J. Mater. Synth. Proceedings, 2001, 9 (1):11-18.[11] Wang C Y, Mo X, Zhou Y, et al. A convenient ultraviolet irradiation technique for in situ synthesis of CdS nanocrystallites at room temperature [J]. J. Mater. Chem., 2000, 10 (3):607-609.[12] Sreekumari N P, Revaprasadu N, Radhakrishnana T, et al. Preparation of CdS nanoparticles using the cadmium(Ⅱ) complex of N,N'-bis(thiocarbamoyl)hydrazine as a simple single-source precursor[J]. J. Mater. Chem., 2001, 11 (6):1555-1557.[13] Yoldas B E. Thermochemically induced photoluminescence in sol-gel-derived oxide etworks [J]. J. Non-Cryst. Solids, 1992, 147-178 :614-620.[14] Garca J, Mondragn M A, Tellez C, et al. Blue emission in tetraethoxysilane and silica gels [J]. Mater. Chem. Phys., 1995, 41 (1):15-17.[15] Green W H, Le K P, Grey J, et al. White phosphors from a silica-carboxylate sol-gel precursor that lack metal activator ions [J]. Science, 1997, 276 (5320):1826-1828.[16] Han Yinhua, Lin Jun. Photoluminescence of SiO2 xerogels [J]. Chin. J. Lumin. (发光学报), 2002, 23 (3):296-300 (in Chinese).[17] Murakoshi K, Hosokawa H J, Saitoh M, et al. Preparation of size-controlled hexagonal CdS nanocrystallites and the characteristics of their surface structures [J]. J. Chem. Soc., 1998, 94 (4):579-586.[18] Mu J, Gu D, Gu X. Synthesis of water-soluble coprecipitate CdxZn(1-x)S nanoparticles [J]. J. Disp. Sci. Techn., 2005, 26 (2):193-195.[19] Yang P, Song C F, Liu M K. The luminescence of PbS nanoparticles embedded in sol-gel silica glass [J]. Chem. Phys. Lett., 2001, 345 (5-6):429-434.

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Related Institution

School of Materials Science and Engineering, China University of Mining and Technology

School of Chemistry and Chemical Engineering, China University of Mining and Technology

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School of Materials Science and Engineering， Changchun University of Science and Technology

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