Growth of 1.6~2.3 &mu;m InGaAsSb/ AlGaAsSb Multi-quantum-well by Molecular Beam Epitaxy

YOU Ming-hui; GAO Xin; LI Zhan-guo; LIU Guo-jun; LI Lin; LI Mei; WANG Xiao-hua; BO Bao-xue

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Growth of 1.6~2.3 μm InGaAsSb/ AlGaAsSb Multi-quantum-well by Molecular Beam Epitaxy

paper | 更新时间：2020-08-12

- Growth of 1.6~2.3 μm InGaAsSb/ AlGaAsSb Multi-quantum-well by Molecular Beam Epitaxy
- Chinese Journal of Luminescence Vol. 32, Issue 3, Pages: 282-284(2011)
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Received：28 June 2010，
  
  Revised：21 September 2010，
  
  Published Online：22 March 2011，
  
  Published：22 March 2011
- 稿件说明：
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尤明慧, 高欣, 李占国, 刘国军, 李林, 李梅, 王晓华, 薄报学. 采用MBE生长1.6~2.3 μm InGaAsSb/ AlGaAsSb多量子阱[J]. 发光学报, 2011,32(3): 282-284

YOU Ming-hui, GAO Xin, LI Zhan-guo, LIU Guo-jun, LI Lin, LI Mei, WANG Xiao-hua, BO Bao-xue. Growth of 1.6~2.3 μm InGaAsSb/ AlGaAsSb Multi-quantum-well by Molecular Beam Epitaxy[J]. Chinese Journal of Luminescence, 2011,32(3): 282-284
尤明慧, 高欣, 李占国, 刘国军, 李林, 李梅, 王晓华, 薄报学. 采用MBE生长1.6~2.3 μm InGaAsSb/ AlGaAsSb多量子阱[J]. 发光学报, 2011,32(3): 282-284 DOI：

YOU Ming-hui, GAO Xin, LI Zhan-guo, LIU Guo-jun, LI Lin, LI Mei, WANG Xiao-hua, BO Bao-xue. Growth of 1.6~2.3 μm InGaAsSb/ AlGaAsSb Multi-quantum-well by Molecular Beam Epitaxy[J]. Chinese Journal of Luminescence, 2011,32(3): 282-284 DOI：

摘要

采用分子束外延生长了不同In组分的InGaAsSb/ AlGaAsSb多量子阱材料。X射线衍射发现量子阱材料有多级衍射卫星峰出现

表明量子阱的界面均匀性和质量较好。研究了不同In组分与光致发光波长的关系

光荧光谱测试表明

所制备的不同In组分的InGaAsSb/AlGaAsSb多量子阱材料

在室温下的发光波长可以覆盖1.6~2.3 m的范围。

Abstract

InGaAsSb/ AlGaAsSb multi-quantum-well(MQWs) were grown by molecular beam epitaxy. The X-ray diffraction pattern presents multi-levels of satellite peaks

which indicate a good interface and excellent crystal quality. Meanwhile

photoluminescence shows the emission wavelength at room temperature covers 1.6~2.3 m with varing In compositions in InGaAsSb/ AlGaAsSb MQWs.

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references

Garbuzov D Z, Lee H, Khalfin V, et al. 2.3~2.7 m room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers [J]. IEEE Photon. Technol. Lett., 1999, 11 (7):794-796.[2] Lin C, Grau M, Dier O, et al. Low threshold room temperature continuous-wave operation of 2.24~3.04 m GaInAsSb/AlGaAsSb quantum-well lasers [J]. Appl. Phys. Lett., 2004, 84 (25):5088-5090.[3] Shterengas L, Belenky G L, Gourevitch A, et al. High-power 2.3 m GaSb-based linear laser array [J]. IEEE Photon. Technol. Lett., 2004, 16 (10):2218-2220.[4] Rodriguez J B, Cerutti L, Tourni E. GaSb-based, 2.2 m type-I laser fabricated on GaAs substrate operating continuous wave at room temperature [J]. Appl. Phys. Lett., 2009, 94 (2):023506-1-2.[5] Zhen Yanlan, Li Aizhen, Li Chun, et al. Photoluminesescence of AlGaAsSb/InGaAsSb multi-quantum well [J]. J. Functional Material and Devices (功能材料与器件学报), 2000, 6 (3):281-284 (in Chinese).[6] Li Zhanguo, Liu Guojun,You Minghui, et al. Growth and characterization of InGaAsSb on InP substrate by molecular beam epitaxy [J]. Chin. J. Lumin. (发光学报), 2009, 30 (5):630-633 (in Chinese).

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Growth of 1.6~2.3 μm InGaAsSb/ AlGaAsSb Multi-quantum-well by Molecular Beam Epitaxy

DOI：

摘要

Abstract

关键词

Keywords

references