Luminescence Properties of (Li,Cu)-doped ZnO Thin Films

CHEN Bao; MENG Xiang-dong; SHI Zhi-ming; ZENG Xiang-hua; CHEN Xiao-bing

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Luminescence Properties of (Li,Cu)-doped ZnO Thin Films

paper | 更新时间：2020-08-12

- Luminescence Properties of (Li,Cu)-doped ZnO Thin Films
- Chinese Journal of Luminescence Vol. 32, Issue 3, Pages: 245-250(2011)
- 作者机构：
  
  扬州大学物理科学与技术学院,江苏扬州,225002
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3;O482.31
- Received：30 July 2010，
  
  Revised：30 August 2010，
  
  Published：2011
- 稿件说明：
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陈宝, 孟祥东, 施志明, 曾祥华, 陈小兵. (Li,Cu)掺杂ZnO薄膜的发光性质[J]. 发光学报, 2011,32(3): 245-250

CHEN Bao, MENG Xiang-dong, SHI Zhi-ming, ZENG Xiang-hua, CHEN Xiao-bing. Luminescence Properties of (Li,Cu)-doped ZnO Thin Films[J]. Chinese Journal of Luminescence, 2011,32(3): 245-250
陈宝, 孟祥东, 施志明, 曾祥华, 陈小兵. (Li,Cu)掺杂ZnO薄膜的发光性质[J]. 发光学报, 2011,32(3): 245-250 DOI：

CHEN Bao, MENG Xiang-dong, SHI Zhi-ming, ZENG Xiang-hua, CHEN Xiao-bing. Luminescence Properties of (Li,Cu)-doped ZnO Thin Films[J]. Chinese Journal of Luminescence, 2011,32(3): 245-250 DOI：

摘要

利用溶胶-凝胶(Sol-gel)法在n型Si(100)衬底上制备(Li

Cu)掺杂ZnO薄膜

研究了室温下薄膜的结构、形貌和光致发光性能。研究结果表明

随着Li掺杂浓度的增加

可见光发光强度增加

可见光发射可能是源于单电离氧空位到价带顶以及单电离氧空位到Li替位Zn(Li

)受主跃迁的双重作用。与此类似

Cu掺杂ZnO薄膜黄绿光部分可能是源于单电离氧空位到价带顶以及单电离氧空位到Cu替位Zn(Cu

)受主跃迁的双重作用。随着Cu掺杂量的增加

单电离氧空位到Cu替位Zn(Cu

)受主的跃迁起主导作用。

Abstract

(Li

Cu)-doped ZnO thin films were prepared on the n-type Si (100) substrate by means of sol-gel process. The structure

surface morphology and photoluminescence properties of the ZnO films were investigated. The results show that all of ZnO thin film samples have strong

-axis preferred orientation. The visible luminescence intensity of Li-doped ZnO films increases with the dopant concentration. The visible light emission can be attributed to the incorporation of transitions derived from the singly ionized oxygen vacancy to the top of valence band and Li

acceptor states. Similarly

the yellow-green emission might be due to the incorporation of transitions derived from the singly ionized oxygen vacancy to the top of valence band and Cu

acceptor states. With the increase of Cu dopant concentration

the transition of singly ionized oxygen vacancy to Cu

acceptor states plays a dominative role.

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Keywords

references

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