Strain Effect on Temperature Dependent Photoluminescence from InxGa1-xAs/GaAs Quantum Wells

YE Zhi-cheng; SHU Yong-chun; CAO Xue; GONG Liang; YAO Jiang-hong; PI Biao; XING Xiao-dong

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Strain Effect on Temperature Dependent Photoluminescence from In_xGa_1-xAs/GaAs Quantum Wells

paper | 更新时间：2020-08-12

- Strain Effect on Temperature Dependent Photoluminescence from In_xGa_1-xAs/GaAs Quantum Wells
- Chinese Journal of Luminescence Vol. 32, Issue 2, Pages: 164-168(2011)
- 作者机构：
  
  南开大学泰达应用物理学院弱光非线性教育部重点实验室天津,300457
- 作者简介：
- 基金信息：
  
  863"
- DOI：
  CLC： O472.3
- Received：30 June 2010，
  
  Revised：19 October 2010，
  
  Published Online：22 February 2011，
  
  Published：22 February 2011
- 稿件说明：
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叶志成, 舒永春, 曹雪, 龚亮, 姚江宏, 皮彪, 邢晓东, 许京军. InxGa1-xAs/GaAs量子阱应变量对变温光致发光谱的影响[J]. 发光学报, 2011,32(2): 164-168

YE Zhi-cheng, SHU Yong-chun, CAO Xue, GONG Liang, YAO Jiang-hong, PI Biao, XING Xiao-dong, XU Jing-jun. Strain Effect on Temperature Dependent Photoluminescence from InxGa1-xAs/GaAs Quantum Wells[J]. Chinese Journal of Luminescence, 2011,32(2): 164-168
叶志成, 舒永春, 曹雪, 龚亮, 姚江宏, 皮彪, 邢晓东, 许京军. InxGa1-xAs/GaAs量子阱应变量对变温光致发光谱的影响[J]. 发光学报, 2011,32(2): 164-168 DOI：

YE Zhi-cheng, SHU Yong-chun, CAO Xue, GONG Liang, YAO Jiang-hong, PI Biao, XING Xiao-dong, XU Jing-jun. Strain Effect on Temperature Dependent Photoluminescence from InxGa1-xAs/GaAs Quantum Wells[J]. Chinese Journal of Luminescence, 2011,32(2): 164-168 DOI：

摘要

利用变温光致发光(PL)研究了In

0.182

0.818

As/GaAs应变及应变补偿量子阱在77~300 K温度范围内的发光特性。随着温度

的升高

PL峰位向低能方向移动。在应力作用下In

0.182

0.818

As/GaAs量子阱的价带顶轻空穴带和重空穴带发生了劈裂。通过理论计算推导应变随温度变化对In

As/GaAs量子阱带隙能量的影响。在Varshni公式基础上

引入由应力导致的带隙能量变化项

。带隙能量计算结果与实验数据吻合较好。通过不同温度下光致发光半峰全宽的变化验证了应力随温度变化对量子阱发光峰的影响。

Abstract

The variable-temperature photoluminescence (PL) spectra of In

0.182

0.818

As/GaAs strained and strain-compensation quantum wells (QWs) were experimentally determined in the temperature range of 77~300 K. The PL peak positions shift to lower energies with the increasing temperature. Strain which is induced by lattice mismatch between epitaxial layer and substrate removes the degeneracy between the light-hole and heavy-hole states at the top of the valence band. A theoretical calculation was presented that takes into account the temperature-induced variations in band gap and biaxial strain to explain the PL spectra.Based on the Varshni relationship

the change of the band gap energy caused by the strain was introduced. It is the function of the temperature and the alloy composition. The calculated results are agree with the experimental data. The full-width at half-maximum (FWHM) of PL spectra of In

0.182

0.818

As/GaAs strained three quantum wells is larger than that of strain-compensation one

and increases more quickly

which is caused by exciton-LO phonon coupling. At last

strain effect on the PL spectra was confirmed through the FWHM curve at various temperature.

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Keywords

references

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