Effect of Ta2 O5 Thickness on The Performances of ZnO-based Thin Film Transistors

ZHOU Fan; ZHANG Liang; LI Jun; ZHANG Xiao-wen; LIN Hua-ping; YU Dong-bin; JIANG Xue-yin; ZH

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Effect of Ta₂ O₅ Thickness on The Performances of ZnO-based Thin Film Transistors

paper | 更新时间：2020-08-12

- Effect of Ta₂ O₅ Thickness on The Performances of ZnO-based Thin Film Transistors
- Chinese Journal of Luminescence Vol. 32, Issue 2, Pages: 188-193(2011)
- 作者机构：
  
  1. 上海大学材料科学与工程学院上海,200072
  2. 上海大学新型显示技术及应用集成教育部重点实验室上海,200072
- 作者简介：
- 基金信息：
  
  Project supported by the National Natural Science Foundation of China (60777018, 607
- DOI：
  CLC： O472.4
- Received：25 August 2010，
  
  Revised：15 November 2010，
  
  Published Online：22 February 2011，
  
  Published：22 February 2011
- 稿件说明：
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周帆, 张良, 李俊, 张小文, 林华平, 俞东斌, 蒋雪茵, 张志林. Ta2O5绝缘层厚度对ZnO基薄膜晶体管器件性能的影响[J]. 发光学报, 2011,32(2): 188-193

ZHOU Fan, ZHANG Liang, LI Jun, ZHANG Xiao-wen, LIN Hua-ping, YU Dong-bin, JIANG Xue-yin, ZHANG Zhi-lin. Effect of Ta2 O5 Thickness on The Performances of ZnO-based Thin Film Transistors[J]. Chinese Journal of Luminescence, 2011,32(2): 188-193
周帆, 张良, 李俊, 张小文, 林华平, 俞东斌, 蒋雪茵, 张志林. Ta2O5绝缘层厚度对ZnO基薄膜晶体管器件性能的影响[J]. 发光学报, 2011,32(2): 188-193 DOI：

ZHOU Fan, ZHANG Liang, LI Jun, ZHANG Xiao-wen, LIN Hua-ping, YU Dong-bin, JIANG Xue-yin, ZHANG Zhi-lin. Effect of Ta2 O5 Thickness on The Performances of ZnO-based Thin Film Transistors[J]. Chinese Journal of Luminescence, 2011,32(2): 188-193 DOI：

摘要

报道了不同厚度Ta

栅绝缘层对氧化锌薄膜晶体管器件性能的影响。在室温下用射频磁控溅射分别制备了100

40 nm厚度的Ta

薄膜作为绝缘层的一组底栅氧化锌薄膜晶体管器件。从实验结果可以得出如下结论:随着Ta

栅绝缘层厚度的增加

相应器件的场效应迁移率下降

其数值分别是50.5

59.3

63.8

71.2 cm

/Vs

对应100

40 nm厚度的绝缘层。从原子力显微图像可以看到

薄膜表面粗糙度随着薄膜厚度的减小而降低

这是场效应迁移率得以提高的主要原因。而100

40 nm不同厚度的绝缘层相应器件的开关电流比分别是1.210

4.810

3.210

7.210

其阈值电压分别为1.9

1.5

1.2

0.9 V。从各项性能综合考虑

85 nm厚度的Ta

栅绝缘层所制备的薄膜晶体管器件具有最佳性能。

Abstract

Bottom-gate ZnO thin-film transistors (ZnO-TFTs) were fabricated with Ta

film as the insulator. Ta

film was grown by the radio-frequency magnetron sputtering at room temperature. The thickness of the Ta

layers were 100

40 nm separately. The effect of the thickness on the performance of the ZnO-TFTs was studied. With the thickness of the insulator decreased from 100

60 nm to 40 nm

the field effect mobility increased from 50.5

59.3

63.8 to 71.2 cm

/Vs. The surface morphology of the Ta

films were checked by the atomic force microscope

which showed that the root mean square (RMS) of the Ta

films roughness decreases with decreasing the insulator thickness. The

off

ratio and the threshold voltage are changed with the insulator thickness.

关键词

Keywords

references

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